12KF4
Abstract: W0024
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 7 41,25 M6 79,4 external connection to be done C C C E E E C G E external connection to
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IGBT FZ 1200
Abstract: kf411 12KF4
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 M6 7 41,25 79,4 external connection to be done C C C E E E C G E external connection to
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FZ 1800 R 17 KF4
Abstract: FZ 79 KF423 IGBT FZ 1800 eupec igbt 400 a 1000 v
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1800 R 17 KF4 61,5 61,5 13 M8 190 31,5 171 1 57 2 C C C E M4 4 3 E E 4,0 tief C G E 2,5 tief 7 8 28 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done
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IGBT EUPEC FZ 1800 R
Abstract: IGBT FZ 1000 KF423 IGBT FZ 1800 fz 79 1500 eupec FZ 1800 G1 TRANSISTOR FZ 101
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E
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Eupec fz 1200 r 12
Abstract: vrm ic
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 7 41,25 M6 79,4 external connection to be done C C C E E E C G E external connection to
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fz 79 1500
Abstract: KF423
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E
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IGBT module FZ 1200
Abstract: IGBT FZ 1800
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 12 KF4 61,5 61,5 13 190 31,5 171 57 1 2 3 C M8 C C E M4 4 E E 4,0 deep C 2,5 deep E 7 G 6 5 8 20,25 28 7 41,25 M6 79,4 external connection to be done C C C E E E C G E external connection to
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E
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Measurement of stray inductance for IGBT
Abstract: Measurement of stray inductance igbt1 module RBSOA circuit of six pack module igbt RBSOA IGBT modules FZ FZ1200R33KF2 IGBT f4 E2 IGBT Modules
Text: Application Note from Europe for the World European PowerSemiconductor and Electronics Company Definition of the module stray inductance Ls Fig.1 shows the principle circuit of a half-bridge and the resulting voltage and current waveforms when switching IGBT1. The circuit stray inductance Lσ, shown as a concentrated element, represents all distributed inductances of capacitors, busbars and IGBT modules
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D-59581
Measurement of stray inductance for IGBT
Measurement of stray inductance
igbt1
module RBSOA
circuit of six pack module igbt
RBSOA
IGBT modules FZ
FZ1200R33KF2
IGBT f4
E2 IGBT Modules
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eupec igbt 3300v
Abstract: transistor 6.z eupec FZ 900 R 12
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 33 KF1 61,5 61,5 M8 13 190 31,5 171 57 C C C E E E 4,0 tief C 2,5 tief M4 E G 20,25 28 7 41,25 79,4 external connection to be done C C C E E E C G E external connection to
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220nF,
eupec igbt 3300v
transistor 6.z
eupec FZ 900 R 12
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eupec FZ 800 r 12 kf1
Abstract: transistor GR 3200 GE DIODE 0270
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 33 KF1 61,5 18 M8 130 31,5 114 C C E E 4,0 tief E C G 2,5 tief M4 7 28 10,65 48,8 10,35 external connection to be done C C E E C G E external connection to be done VWK, April 1996
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peak2500
150nF,
eupec FZ 800 r 12 kf1
transistor GR 3200
GE DIODE 0270
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FZ1600R12KF4
Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC
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600V/1700V
500V/3300V
50GB60DLC
75GB60DLC
100GB60DLC
150GB60DLC
200GB60DLC
300GB60DLC
FZ1600R12KF4
IGBT FZ 800
75GD120DN2
100GB170DN2
IGBT FZ 1200r16kf4
igbt driver
BSM10GD60DLC
FZ800R12KL4C
igbt 1600V 20A
eupec igbt BSM 100 gb
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Eupec bsm 25 gb 120
Abstract: EUPEC Thyristor HIGH VOLTAGE THYRISTOR Thyristor PIN CONFIGURATION diode 1481 DISC THYRISTOR Transistor D 798 600V 100 A THYRISTOR 452 diode PHASE CONTROL THYRISTOR MODULE TD 56 N
Text: . power the Home Products Diode News Contact Editorials Job Offers VRRM max. 2400V Company Search Site Content VRRM max. 9000V the figures in the part-no. represent the current rating [A] . . . . . . . . . . . V RRM max. 800 V D 255 N D 255 K V RRM max. 1800 V
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all type of thyristor
Abstract: DISC THYRISTOR thyristor control ic with current sense Thyristor PIN CONFIGURATION thyristor t 500 n 1800 1000 A thyristor fast thyristor TO 220 THYRISTOR FAST SWITCHING IGBT presspack eupec phase control thyristor
Text: Type designations Typenbezeichnungen Thyristors T 930 S 18 T M C T symmetrically blocking thyristor A asymmetrically blocking thyristor 930 limiting average forward current A at tc= 85° C Ceramic disc W 1 Ceramic disc P 4 Epoxy disc 19 mm high 6 Epoxy disc 35 mm high
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single phase bridge fully controlled rectifier
Abstract: EUPEC DD 105 N 16 L single phase fully controlled rectifier 3 phase rectifier circuit thyristor EUPEC tt 105 N 16 EUPEC DD 151 N 14 k EUPEC Thyristor eupec FZ 800 R 16 thyristor TT 18 N B/B0615 DIODE
Text: Type designations Thyristors T 930 S 18 T M C T symmetrically blocking thyristor A asymmetrically blocking thyristor 930 limiting average forward current A at tc= 85° C Ceramic disc W Ceramic disc P 1 Epoxy disc 19 mm high 4 Epoxy disc 35 mm high 6 7 Epoxy disc 8 mm high
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EUPEC T 691 S 30 thyristor
Abstract: T 308 THYRISTOR EUPEC T 1078 F T 468 THYRISTOR EUPEC Thyristor h 198 s Thyristor PIN CONFIGURATION T 481 thyristor EUPEC Thyristor asymmetric thyristor T675S
Text: . power the Home Products F-Thyristors News Contact Editorials Fast Thyristors V DRM,RRM max. 800 V T 72 F T 102 F . . T 178 F T 308 F T 698 F T 1078 F . Job Offers Company Search Site Content Fast Asymm. Thyristors the figures in the part-no. represent the current rating [A]
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FS20R06XE3
Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors
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D-59581
FS20R06XE3
aeg powerblock tt
bsm25gp120 b2
thyristor aeg
aeg powerblock tt 32 n
STR W 6856 DATA SHEET
HIGH VOLTAGE ISOLATION DZ 2101
FS450R12KE3 S1
MR 4710 IC
aeg powerblock dd
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DISC THYRISTOR
Abstract: D170U D1201 D170S single phase bridge rectifier pin configuration "921" Thyristor diode gto EUPEC Thyristor V4500 4500 igbt
Text: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.
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D170S
D170U
DISC THYRISTOR
D170U
D1201
single phase bridge rectifier pin configuration
"921" Thyristor
diode gto
EUPEC Thyristor
V4500
4500 igbt
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snubber FOR 3PHASE BRIDGE RECTIFIER
Abstract: EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 D170S eupec phase control thyristor
Text: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.
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D170S
D170U
snubber FOR 3PHASE BRIDGE RECTIFIER
EUPEC Thyristor
gct thyristor
74x26mm
eupec igbt BSM 100 gb
FAST HIGH VOLTAGE DIODE 4000 V
EUPEC D1201
D1201
eupec phase control thyristor
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FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in
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EUPEC powerblock
Abstract: thyristor TT 46 N Thyristor eupec POWERBLOCK tt 25 n powerblock EUPEC tt 105 N 16 thyristor tt 500 n 16 thyristor tt 250 n 16 EUPEC POWERBLOCK TD thyristor eupec tt 251 n 14 powerblock tt 60 N
Text: . power the Home Products Bipolar News Contact N-Thyristor-Modules Editorials N-Diode-Modules Job Offers Company Search future Site Content Fast Thyristor Modules Fast Diode Modules the figures in the part-no. represent the current rating [A] Packages Packages
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FS450R12KE3 S1
Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.
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E-103,
FS450R12KE3 S1
infineon pmb 6850 e
bsm25gp120 b2
HIGH VOLTAGE ISOLATION DZ 2101
infineon pmb 6850
Thyristor eupec POWERBLOCK
2SD 1460
pmb 6850
V61-14
BSM35GP120
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thyristor td 61 n 12 k
Abstract: thyristoren
Text: Type designations Thyristoren Typenbezeichnungen Gleichrichterdioden T 930 S 18 T M C T symmetrisch sperrender Thyristor A asymmetrisch sperrender Thyristor 930 Dauergrenzstrom A bei tc= 85“ C Keramic Scheibe W Keramic Scheibe P 1 4 Epoxy disc 19 mm hoch
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thyristor short circuit
Abstract: PS-20 pressure switch fast diode "40 A" eupec phase control thyristor
Text: Type designations Typenbezeichnungen Thyristors Rectifier T 930 S 18 T M C T symmetrically blocking thyristor asymmetrically blocking thyristor 930 limiting average forward current A at tc= 85° C Ceramic disc W Ceramic disc P Epoxy disc 19 mm high Epoxy disc 35 mm high
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