EUPEC BSM Search Results

BSM 50 GX 120 DN2

Abstract: bsm 50 Gx 120 IGBT BSM20GD60DN2E3224 35GD120DN2E3224 25GD120DN2 25GD120DN2E3224 75GD120DN2 15gd120dn2e322 100GD120DN2 three phase bridge inverter 120 degree
Contextual Info: „Econo“my improvement in inverter-converter-moduldesign Gottfried Ferber, eupec GmbH, Warstein-Belecke Ralf Jörke, eupec GmbH, Warstein-Belecke Christian Lammers, Ruhr-Universität Bochum Dr. Andreas Lenniger, eupec GmbH, Warstein-Belecke Abstract: To realise an economy inverter construction, it is a good solution to use high reliable

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

Eupec Power Semiconductors 600v bsm

Abstract: BSM300GB60DN2 eupec igbt BSM 100 gb Eupec BSM siemens igbt 200 A WELDING INVERTER DESIGN BY IGBT
Contextual Info: A New Generation of 600V IGBT-Modules Dipl.-Ing. Jürgen Göttert, eupec GmbH & Co KG, Warstein Dipl.-Ing. Andreas Karl, eupec GmbH & Co KG, Warstein Dipl.-Ing. Thomas Laska, SIEMENS, München Dr. Ing. Anton Mauder, SIEMENS, München Dipl.-Ing. Wolfgang Scholz, SIEMENS, München

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

d 2095 transistor

Contextual Info: eupec Technische Inform ation / Technical Inform ation ! g BSM20GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties Höchstzulässige W erte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

Eupec BSM

Abstract: Eupec BSM 15 gd 60 dlc QE RB 29
Contextual Info: eupec Technische Information / Technical Information BSM 100 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte Elektrische Eigenschaften / Maxim urn rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Contextual Info: eupec Technische Information / Technical Information BSM200GB120DLC ££££. vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Eupec BSM

Abstract: BSM50GP60 eupec
Contextual Info: eupec Technische Information / Technical Information BSM50GP60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö ch stzu lässig e Werte / Maximum rated valu es Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

35GP120

Abstract: BSM35GP120
Contextual Info: eupec Technische Information / Technical Information BSM35GP120 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö ch stzu lässig e Werte / Maximum rated valu es D iode G le ichrich te r/ Diode R ectifier Periodische Rückw. Spitzensperrspannung

Eupec BSM

Abstract: BSM50GD120DN2E3226 E3226 GD120DN2E3226 C67070-A2514-A67
Contextual Info: eupec BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase fuN-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type BSM 50 GD120DN2E3226 ^CE h 1200V 50A

BSM30GP60 INVERTER CIRCUIT

Abstract: BSM30GP60
Contextual Info: eupec Technische Inform ation / Technical Inform ation ! g BSM30GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö c h s tzu lä s s ig e W e rte / M axim u m rated valu e s Diode Gleichrichter/ Diode Rectifier

BSM75GD120DLC

Contextual Info: eupec Technische Information / Technical Information BSM75GD120DLC ££££. vorläufige Daten preliminary data H öchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties K o lle kto r-E m itte r-S p e rrs p a n n u n g

Transistor GE 67

Contextual Info: eupec Technische Inform ation / Technical Inform ation H i— B S M 15G P 60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties Höchstzulässige W erte / Maximum rated values Diode Gleichrichter/ Diode Rectifier P eriodische Rückw. S pitzensperrspannung

module bsm 20 gp 60

Abstract: module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge
Contextual Info: Power electronics Permanent innovation in IGBT modules Since the mid-80s, the technical specifications of IGBTs have improved substantially, opening up applications long reserved for bipolar components such as thyristors or GTOs. ver since the Siemens Semiconductor Group and eupec GmbH, a power

IGD515EI

Abstract: IGBT Power Module siemens ag FS450R17KE3 FF400R17KE3 igbt 1200v 150a trench field stop ECONOPACK FF800R17KE3 FF300R17KE3 FZ3600R17KE3 FZ400R17KE3
Contextual Info: 1700V Trench IGBT Modules * R. Mallwitz, R. Tschirbs , M. Pfaffenlehner, A. Mauder (*) (*) (*) (*) , C. Schaeffer (*) eupec GmbH, Max-Planck Straße 5, D-59581 Warstein-Belecke Infineon Technologies AG, Balanstraße 73, D-81541 Munich Infineon Technologies AG, Siemensstraße 2, A-9500 Villach

JS7J

Contextual Info: eupec BYM 600 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166 Type VR25 BYM 600 A 170 DN2 1700V 600A ^FDC Package

Contextual Info: Technische Information / eupec Technical Information BSM25GD120DLCE3224 lü B T - M o d u le s vorläufige Daten preliminary data H öchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties K o lle kto r-E m itte r-S p e rrs p a n n u n g

Contextual Info: eupec Technische Information / Technical Information ££££. BSM 100G B120D LC vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties K o lle kto r-E m itte r-S p e rrs p a n n u n g

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" 5kw inverter circuit diagram pure sinus inverter circuit diagram the calculation of the power dissipation for the IGBT BSM25GP120 3 phase inverter 150 degree conduction mode wave IGBT inverter calculation IGBT JUNCTION TEMPERATURE CALCULATION D. Sraiber, W. Lukasch
Contextual Info: Power Integration with new Econo-PIM IGBT Modules Calculation of junction-temperatures for rectifier-diodes, IGBT’s and freewheeling-diodes in the PIM A. Schulz, N. Dittmann, M. Loddenkötter, Th. Schütze eupec, Max-Planck-Straße 5, 59581 Warstein M. Feldvoß

B120D

Contextual Info: eupec Technische Information / Technical Information ££££. BSM 150G B120D LC vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties K o lle kto r-E m itte r-S p e rrs p a n n u n g

Assmann Electronics v6515

Abstract: Thermagon kluber grease t-pli 210 v6515 kluber T-PLI 200 thermagon FSF52 Thermagon thermal grease T-PLI 210 thermagon
Contextual Info: Application Note from Europe for the World European PowerSemiconductor and Electronics Company Comparison of thermal compounds and heat conducting foils The following information is the result of a comparative investigation of different heat conductive materials in the eupec laboratory. The examined types only represent a small

Contextual Info: Technische Information / Technical Information e u p e c BSM300GB120DLC ££££. vorläufige Daten preliminary data H öchstzulässige W erte Elektrische Eigenschaften / M axim um rated values / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage