ba1s
Abstract: EM6A9320BI-4MG EM6A9320 EM6A9320BI em6a9320bi-4
Text: EtronTech EM6A9320BI Revision History Revision 0.9D Nov., 2006 Change speed to 250MHz Revise DC and AC characteristics Revision 0.9C(Mar., 2006) Deleted confidential wording Revision 0.9B(Mar., 2006) Revise the DC and AC characteristics Etron Technology, Inc.
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EM6A9320BI
250MHz
4Mx32
Nov/2006)
EM6A9320
high11
200uS
200xCK
ba1s
EM6A9320BI-4MG
EM6A9320BI
em6a9320bi-4
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EM6A9320BI-5MG
Abstract: EM6A9320BI-4MG ba1s EM6A9320BI4MG 4mx32 sdram 1m x 4x 32 EM6A9320BI EM6A9320
Text: EtronTech EM6A9320BI Revision History Revision 0.9C Mar., 2006 Deleted confidential wording Revision 0.9B(Mar., 2006) Revise the DC and AC characteristics Etron Technology, Inc. No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
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EM6A9320BI
4Mx32
May/2006)
EM6A9320
EM6A9320BI-5MG
EM6A9320BI-4MG
ba1s
EM6A9320BI4MG
sdram 1m x 4x 32
EM6A9320BI
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cke 2009
Abstract: EM669325 A11J
Text: EtronTech EM669325BK 4M x 32 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • Clock rate: 166 MHz Fully synchronous operation Internal pipelined architecture 1M word x 32-bit x 4-bank Programmable Mode - CAS Latency: 2, or 3
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EM669325BK
32-bit
cycles/64ms
90-ball,
EM669325
13mmx1
cke 2009
EM669325
A11J
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4mx32
Abstract: ba1s EM6A9320BI-4 EM6A9320BI-5 etron 4mx32 Etron Technology EM6A9320
Text: EtronTech EM6A9320 4M x 32 DDR SDRAM Etron Confidential Preliminary Rev 0.3 7/2002 Features Overview • Fast clock rate: 350/333/300/285/250/200 MHz • Differential Clock CK & CK# input The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 128
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EM6A9320
EM6A9320
32-bit
4Mx32
ba1s
EM6A9320BI-4
EM6A9320BI-5
etron 4mx32
Etron Technology
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EM6A9325
Abstract: No abstract text available
Text: EtronTech EM6A9325 4M x 32 Low Power SDRAM Advance 07/2002 •Burst-Read-Single-Write • Burst stop function Features • Fast clock rate : 133/100 MHz • Fully synchronous operation • Individual byte controlled by DQM0-3 • Auto Refresh and Self Refresh
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EM6A9325
32bit
11x13mm
90-FBGA,
EM6A9325
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EM669325
Abstract: etron 4mx32
Text: EtronTech EM669325 4M x 32 Low Power SDRAM Advance 03/2002 •Burst-Read-Single-Write Features • Burst stop function • Fast clock rate : 133/100 MHz • Individual byte controlled by DQM0-3 • Fully synchronous operation • Auto Refresh and Self Refresh
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EM669325
32bit
11x13mm
a90-FBGA,
a9x15
EM669325
etron 4mx32
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EM6A9320BI-5MG
Abstract: ba1s EM6A9320 EM6A9320BI em6a9320bi-5
Text: EtronTech EM6A9320BI Revision History Revision 1.0 Mar., 2007 Delete ‘Preliminary’ Revise the AC characteristics Revision 0.9E(Sep., 2006) Revise the AC characteristics Revise CAS Latency Revision 0.9D(Jul., 2006) Revise the AC characteristics Revision 0.9C(Jul., 2006)
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EM6A9320BI
4Mx32
200uS
200xCK
EM6A9320BI-5MG
ba1s
EM6A9320
EM6A9320BI
em6a9320bi-5
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EM6A9320
Abstract: EM6A9320BI-4 EM6A9320BI-5 BA1l4
Text: EtronTech EM6A9320 4M x 32 DDR SDRAM Preliminary Rev 0.6 5/2006 Features Overview • Fast clock rate: 350/333/300/285/250/200 MHz • Differential Clock CK & CK# input The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 128
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EM6A9320
EM6A9320
32-bit
4Mx32
EM6A9320BI-4
EM6A9320BI-5
BA1l4
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EM669
Abstract: No abstract text available
Text: EtronTech EM66932A 4M x 32 Hand-Held Low Power SDRAM LPSDRAM Preliminary (Rev 0.1 June/2003) Features • • • • • Clock rate: 133/125/100 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (1M x 32bit x 4bank) Programmable Mode
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EM66932A
June/2003)
32bit
cycles/64ms
11x13mto
90-FBGA,
EM669
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EM639325TS
Abstract: EM639325Ts-6g
Text: EtronTech EM639325TS 4M x 32 SDRAM Preliminary Rev 0.5 May/2007 Features • • • • • • • • • • • • Clock rate: 166 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (1M x 32bit x 4bank) Programmable Mode
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EM639325TS
May/2007)
32bit
cycles/64ms
86-Lead
EM639325TS-6G
166MHz
EM639325TS
EM639325Ts-6g
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EM669325
Abstract: No abstract text available
Text: EtronTech EM669325BK 4M x 32 SDRAM Preliminary Rev 0.5 May/2007 Features • • • • Clock rate: 166 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (1M x 32bit x 4bank) Programmable Mode - CAS# Latency: 3 - Burst Length: 1, 2, 4, 8, or full page
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EM669325BK
May/2007)
32bit
cycles/64ms
8x13mm,
EM669325BK-6G
166MHz
90-FBGA,
EM669325
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EM6A9325
Abstract: No abstract text available
Text: EtronTech EM6A9325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.4 June/2003) Features • 4096 refresh cycles/64ms • Single 2.5V power supply • Interface: LVCMOS •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz
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EM6A9325
June/2003)
cycles/64ms
11x13mm,
32bit
EM6A9325BG-7
133MHz
11x13
125y1
EM6A9325
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EM669325
Abstract: No abstract text available
Text: EtronTech EM669325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.6 Sep./2003) Features • 4096 refresh cycles/64ms • Single 3.0V, or 3.3V power supply • Interface: LVTTL •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz
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EM669325
cycles/64ms
11x13mm,
32bit
EM669325BG-7
133MHz
11x13
90-FBGA,
EM669325
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bwd R3076
Abstract: rk7002b MDB35 transformer 27M20 c639 ph S43 sot223 AD5815 ATMEL256 medion ICS952013
Text: 5 MSI 4 3 2 1 MS-1002 Ver:0C DTR MS-1002 System Block Diagram D D DT CPU PRESCOTT PG.2~3 TV C PG.26 FSB800 16M 16M ATi M10 P/C 16M 16M 16M 16M SIS648FX AGP 8X/66Mz PG.32~35 MiniPCI 802.11b PG.13 PG.5~7 BORADCOM GIGA LAN MMC/SM/SD/MS B PG.11~12 C AC LINK UDMA 133
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MS-1002
400MHz/533MHz/800MHz.
FSB800
DDR400/DDR333/DDR266
8X/66Mz
SIS648FX
400MHz
MuTIOL/133Mz
PCI/33MHz
bwd R3076
rk7002b
MDB35 transformer
27M20
c639 ph
S43 sot223
AD5815
ATMEL256
medion
ICS952013
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