ESM1 Search Results

ESM1600B

Abstract: ESM16 ESM1600BFP QUAD COMPARATOR INTERFACE CIRCUIT
Contextual Info: ESM1600B QUAD COMPARATOR INTERFACE CIRCUIT . . . MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT : 0.3V OUTPUT CURRENT : 15 mA LARGE SUPPLY VOLTAGE RANGE : + 10V to + 35V INTERNAL THERMAL PROTECTION INPUT AND OUTPUT CLAMPING PROTECTION DIODES. DIP14 DESCRIPTION

transistor ESM 30

Abstract: diode ESM 15 transistor ESM DO-213AB
Contextual Info: SURFACE MOUNT SUPER FAST RECTIFIER ESM1A THRU ESM1J VOLTAGE RANGE 50 to 600Volts FORWARD CURRENT 1.0 Ampere FEATURES • • • • • • DO-213AB For surface mounted applications Glass passivated chip junction Low leakage current Fast switchig Plastic package has underwrites laboratory flammability

ESM1600B

Abstract: ESM1600BFP
Contextual Info: ESM1600B QUAD COMPARATOR INTERFACE CIRCUIT . . . MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT : 0.3V OUTPUT CURRENT : 15 mA LARGE SUPPLY VOLTAGE RANGE : + 10V to + 35V INTERNAL THERMAL PROTECTION INPUT AND OUTPUT CLAMPING PROTECTION DIODES. DIP14 DESCRIPTION

ESM1000S

Abstract: electronique capteur magnetique de precision E166814 capteur
Contextual Info: ABB Entrelec SENSOR / CAPTEUR Issued: 2002.01.17 Emis le : 10, Rue Ampère Commercial reference Order code Modification : 2 69680 Chassieu, FRANCE référence commerciale Référence de commande Date : 2002.11.27 Tel : +33 0 4 72 22 17 22 ESM1000S 1SBT191000R0002

Contextual Info: £ Z 7 ^ 7/ SG S "T H O M S O N R LKgTTMDtEi ESM1600B QUAD COMPARATOR INTERFACE CIRCUIT . MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT: 0.3V • OUTPUT CURRENT : 15 mA . LARGE SUPPLY VOLTAGE RANGE : + 10V to + 35V ■ INTERNAL THERMAL PROTECTION . INPUT AND OUTPUT CLAMPING PROTEC­

Contextual Info: £ ÿ j SCS-THOMSON ESM1600B QUAD COMPARATOR INTERFACE CIRCUIT • MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT :0 .3 V ■ OUTPUT CURRENT: 15 mA ■ LARGE SUPPLY VOLTAGE RANGE : + 10 V to + 35 V ■ INTERNAL THERMAL PROTECTION ■ INPUT AND OUTPUT CLAMPING PROTEC­

ESM1600B

Abstract: ESM1600BFP
Contextual Info: ESM1600B QUAD COMPARATOR INTERFACE CIRCUIT . . . MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT : 0.3V OUTPUT CURRENT : 15 mA LARGE SUPPLY VOLTAGE RANGE : + 10V to + 35V INTERNAL THERMAL PROTECTION INPUT AND OUTPUT CLAMPING PROTECTION DIODES. DIP14 DESCRIPTION

DO-213AB

Abstract: ESM101 ESM102 ESM103 ESM105 ESM106
Contextual Info: ESM101 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD IKIERNAUONAL ELECTRONICS L IP . ESM 106 TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SUPER FAST RECTIFIER VOLTAGE RANG E - 50 to 400 Volts C U R R E N T - 1.0 Am pere FEATURES * Ideal fo r s u r f a c e m o u n t e d a p p lic a t io n s

DO-213AB

Abstract: ESM101 ESM102 ESM103 ESM104 ESM105 ESM106
Contextual Info: ESM101 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS ESM108 TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SUPER FAST RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * ldeal for surface mounted applications Low leakage current

Contextual Info: SURFACE MOUNT DEVICE-MELF | Io A 1.0 T Y PE \ ST A N D A R D F R F R H E R SF O U T L IN E \(m m / T y p .) H °! \ V \ rrm (V o lts) 5- L i y 2.6 - - \ 50 SM4001 SM4933 FSM101 HSM101 ESM101 100 SM4002 SM4934 FSM102 HSM102 ESM102 150 ESM103 200 SM4003

Contextual Info: ESM102S Transistors Full Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)12 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)

Contextual Info: ESM103 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)1.0

Contextual Info: ESM121R Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)13 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)

100V 20a DC MOTOR DRIVER UC3844

Abstract: quad darlington 80V step-down uc3843 h-bridge L298N l200 regulator sgs L298N dmos full bridge 100V GS-D550 GS-T30-1200 microstep drive STEPPER MOTOR
Contextual Info: ALPHANUMERICAL INDEX Type Number 29 ESM1600B Quad Comparator Interface C irc u it. ESM1602B Quad Comparator Interface C irc u it. 37 GS-C200 Intelligent Stepper Motor Controllers M o d u le .

Contextual Info: ESM121RS Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)13 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n

Contextual Info: ESM1406 Linear ICs Fixed Positive Voltage Regulator status Military/High-RelN Output Voltage Nominal V 6.0 Load Current Max. (A)1.0 Tolerance (%) Drop-Out Volt Max.2.8 P(D) Max. (W)1.2 Supply Voltage Maximum (V)20 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70

Contextual Info: ESM121S Transistors Half Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)13 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)

ESM117

Abstract: ESM162 max-h21E ESM16 esm 117 esm 906 data
Contextual Info: ESM 161 ESM162 PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS PNP D ARLIN G TO N SILIC IU M , BASE EPITAXIEE Compl. ESM 117, 118 P R E L IM IN A R Y D A TA N OTICE PR EL IM IN A IRE Monolithic construction Construction m onolithique

Contextual Info: Rectifiers SMI Case 1.0 Amp 4" Type Silicon Rectifier SM4001 SM4002 SM4003 SM4004 SM4005 SM4006 SM4007 SM4008 Fast Recovery SM4933 SM4934 SM4935 SM4936 SM4937 Schottky B arrier SM5817 SM5818 SM5819 Super Fast ESM103 ESM106 High Efficiency HSM106 m ini Reel

DO-213AB

Abstract: ESM101 ESM102 ESM103 ESM104 ESM105 ESM106
Contextual Info: ESM101 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS ESM106 TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SUPER FAST RECTIFIER VOLTAGE RANGE - 50 to 400 Volts CURRENT - 1.0 Ampere FEATURES * * * * ldeal for surface mounted applications Low leakage current

Contextual Info: SULLINS PART NUMBER ESM12SRTH SULLINS ELECTRONICS CORP SAN MARCOS, CA 760−744−0125 FAX 760−744−6081 E D C B A = = = = = 2.811+−.020 2.469+−.010 2.156+−.015 2.036+−.008 1.716+−.008 [71.40+−0.51] [62.71+−0.25] [54.76+−0.38] [51.71+−0.20]

Contextual Info: ESM102 Transistors Full Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)12 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)

boq rectifier

Contextual Info: ERBCTRO N THRU SEMICONDUCTOR TECHNICAL SPECIFICATION ESM106 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE-50 to 4 00 Volts CURRENT-1.0 Ampere FEATURES * F as t s w itc h in g * G lass p a s s iv a te d d e v ic e * Ideal fo r s u rfa c e m o u n te d a p p lic a tio n s

Contextual Info: ESM102R Transistors Full Bridge MOSFET Power Module Circuits Per Package1 V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)12 Absolute Max. Power Diss. (W)500 Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case I(DSS) Min. (A)1.0m I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)