ESIS Search Results

Contextual Info: RN6006 RN6006 MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in m m 1,6M A X . 1.7M AX. m - W ith B u ilt-in B ias R esistors S im p lify C irc u it D esign R educe a Q u a n tity of P a r ts a n d M a n u fa c tu rin g Process

2SK945

Abstract: 2SK9
Contextual Info: TOSHIBA 2SK945 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • L o w D ra in -S o u rc e O N R esistan ce • r d s (o n ) = (T y p -)

1SV261

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV261 UHF SHF TUNING • H igh C apacitance R atio : C 2 V /C 2 5 V = 5.7 Typ. • Low Series R esistance : r s = 1.20 (Typ.) • E xcellent C-V C h aracteristics, an d Sm all T rack in g E rror.

Contextual Info: TOSHIBA 2SJ312 Field Effect Transistor Industrial Applications TQ-220FL Unit in mm Silicon P Channel MOS Type L2-7i-MOS IV High Speed, High Current Switching Applications Features • 4-Volt G ate Drive • Low Drain-Source O N R esistance - r d s (ON) = S O m Q (Typ.)

FMVSS-302

Abstract: TF001PET-WD techflex D2117 Rating-UL94 FMVSS302
Contextual Info: GENERAL PURPOSE Technical Data Sheet FLEXO PET E  conomical And Easy To Install R  esists Gasoline, Engine Chemicals And Cleaning Solvents E  xpands Up To 150% C  ut And Abrasion esistant F  MVSS 302 Approval Put-Ups Nominal Size Part # 1/16” PTN0.06

CNY 50

Abstract: HS153 CNY50
Contextual Info: SSI 32R1510BR cimmsiiskns• MR Head Read/Write Device A TDK Group/Company Advance Information D ecem ber 1993 DESCRIPTION FEATURES T he SSI 32R 1510B R is an integrated circuit designed fo r use w ith M agneto-R esistive recording heads. It p ro v id e s a w rite d river and a low noise read a m plifierfor

Contextual Info: Temic DG221 S e m i c o n d u c t o r s Quad SPST CMOS Analog Switch with Latches Features Benefits • Accepts 150-ns W rite Pulse W idth • 5-V O n-C hip Regulator • Built on PLU S-40 Process • Latches Are Transparent with W R Low • Low O n-R esistance: 60 Q

sot-23 marking code n1

Abstract: sot23 marking code n1 marking code n1 sot23 marking code
Contextual Info: TN0201T Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY V (BR)DSS M in (V ) r DS(on) M a x ( Q ) 1.0 20 V GS(.h )(V ) I d (A ) 1.0 to 3.0 0.39 v GS= io v 1.4 0 VGS = 4.5 V BENEFITS APPLICATIONS • FEATURES L ow O n -R esista n ce : 0 .7 5 Q

D 1709 N 22

Contextual Info: SILICON NPN EPITAXIAL TYPE RN1707-RN1709 U n it in m m SW ITC H IN G , INV ERTER CIRCUIT, IN TERFAC E C IRCU IT A N D D R IV ER C IRC U IT A PPLICA TIO N S. • In c lu d in g Two D evices in U SV U ltra S u p e r M ini T ype w ith 5 leads • W ith B u ilt-in B ias R esistors

Contextual Info: ESISTANCE e + 2 5'C = 100,000 0 NOMINAL ACCURACY 0 TO + 1 0 0 T = t 1.0'C R ESISTAN C E/TEM PERATURE CURVE = " J " BETA 'f (0 TO + 5 0 'C ) = 3 ,892 'K NOMINAL TEMPERATURE COEFFICIENT e + 2 5 'C = - 4 .4 % /”C NOMINAL DISSIPATION CONSTANT = 2 m W /'C NOMINAL

11AP

Contextual Info: ESISTANCE e + 2 5'C = 15,000 0 NOMINAL ACCURACY 0 TO + 5 0 ‘C = t 0.50'C R ESISTAN C E/TEM PERATURE CURVE = " J " BETA 'f (0 TO + 5 0 'C ) = 3 ,892 'K NOMINAL TEMPERATURE COEFFICIENT e + 2 5 'C = - 4 .4 % /”C NOMINAL DISSIPATION CONSTANT = 2 m W /'C NOMINAL

Contextual Info: ESISTANCE e + 2 5'C = 10,000 0 t 10% R ESISTAN C E/TEM PERATURE CURVE = " J " BETA 'f 0 TO + 5 0 'C = 3 ,892 'K NOMINAL TEMPERATURE COEFFICIENT e + 2 5 C = - 4.4% /"C NOMINAL DISSIPATION CONSTANT = 2 m W /'C NOMINAL THERMAL TIME CONSTANT = 8 SECONDS NOMINAL

2SK313

Abstract: 2SK312 2SK313 FET HITACHI 2SK* TO-3 2sk312 hitachi
Contextual Info: blE T> m 4 l4tíÍD50S DD13G3G 7 b 3 ihith 2SK312,2SK313-HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER 3 O • FEATURES • Low O n -R esistan ce. • H igh S peed S w itc h in g . • H igh C utoff Frequency.

MIL-R-83401

Abstract: 0740T R100Y
Contextual Info: VISHAY 34E ESISTORS D H QQQ1BS2 flCH • V I S H T - b Z - D 5 VISH AY R esistive System s G roup . . . a VISH AY C om pany ♦ 63 Lincoln Highway, M alvern, PA 19355 ♦ 215 644-1300 Standard Dimensions VISHAY Model 1445/1445Q* 14 Pin DIP Package 0 .0 Q 8 -0.016

74LS248

Abstract: 74LS248DC 74LS248PC LS248 LS48 BCD to 7 segment 54LS248DM 54LS248FM 74LS248FC bcd 7 segment 248
Contextual Info: 248 C O N N E C T IO N D IA G R A M P IN O U T A 5 4 L S /7 4 L S 2 4 8 1 / BCD TO 7-SEGMENT DECODER Ai [T 16] V cc W ith 2 k n P u ll-u p R esistors a 2|T T ilt Lt [3 t 4 |g b i/ r b o D E S C R IP T IO N — The 'LS24B has active H IG H outputs with internal 2 kfi

Contextual Info: ELEC TRIC A L SPEC IFIC ATIO N S : 1.0 INDUC TANC E: P2-J2=P1-J1 ; P3-J3=P4-J4 2 .0 DC R ESIS TA N C E: P 1 + P 1 = P 2 - J 2 = P 3 - J 3 = P 4 - J 4 3 .0 COM M ON MODE: F R EQ U EN C Y 1 M H z C M A (- d B ) 10 10 22 20 28 70 30 200 28 500 18 TYP lg^>uU

E6M3

Abstract: C8D20PF29032 C8D35PF29023
Contextual Info: ThomasiBetts Cardedge Press-Fit .100" CENTER-TO-CENTER .200" ROW-TO-ROW PRESS-FIT WITHOUT STANDOFFS T O LB49571 ES0960 P h y sic a l P r o per ties In s u la tio n R esistance: 5000 megohms minimum. C o n ta c t R e te n tio n In to PCB: 5 lbs. In s e rtio n /W ith d ra w a l F o rc e : 8 o z./2 oz. average

Contextual Info: Gigohm Wraparound Surface Mount CHIP ESISTORS FEATURES • R esistan ce values to 1 x 1012£2 • 96% Alumina substrate • Wraparound platinum silver PtAg terminations • HCC-0805-XXXX-X: PtAg term inations with 62/36/2 solder coating for superior solder attachm ent.

ULTRONIX RWR

Abstract: rwr80nr MT29UZ4B8DZZHGPB-107 W.84Z
Contextual Info: A M O DELS ESS/W /N, EGS/W/N W ire w o u n d R esisto rs CO MPANY OF ULTRONIX M ilitary/Established R eliability M IL-R-39007 Q ualified, Type RWR, R Level FEATURES • Meets solvent esistance of MIL-STD-202, Method 215 • 100% power stabilization and screening test

Dale Resistor SPR 383

Abstract: Wirewound Resistors Dale Resistor SPR
Contextual Info: A COMPANY OF S P EC IA L PURPO SE W irew o u n d R esisto rs Four Term inal, Current Sensing For Instrum entation and Control M O DELS S P R -676 S P R -2 03 9 , S P R -2 09 3 Wirewound esistors Special Purpose Open Style STANDARD ELECTRICAL SPECIFICATIONS

Contextual Info: MODEL CPF d a l e Metal Film esistors Industrial, Power, Flameproof FEATURES • High power rating, small size • • • • • STANDARD ELECTRICAL SPECIFICATIONS DIMENSIONAL CONFIGURATIONS W A TTA G E R ATING 70°C VO LTA G E RATIN G R ESISTA N C E R AN G E

Contextual Info: DIN 3P,4P SOCKET SPECIFICATIONS: R ating: 2A 100V AC. C o n ta c t R esistance: 2 0 m O Max. In s u la tio n R e sistan ce: 1 0 0 M D Min a t DC 500V D ie le ctric S tre n g th : AC 5 0 0 V /1 M inute. 1 4.7M AX. 1.8 1 NEW 2 D J - 0 2 0 3 P 0 0 2 UJ Cl o 5

SIX10

Contextual Info: A COMPANY OF M O DELS LVR -1, LVR -3, LVR -5 W irew o u n d R esisto rs M ilitary, M IL-R-49465 Qualified, Type RLV and Com m ercial, Precision Power, Low Value FEATURES • Ideal for all types of current sensing applications including switching and linear power supplies, instruments

RN601

Contextual Info: PRECISION METAL FILM ESISTORS GP • • • • • SERIES M eets requirem ents of M IL-R -10509 10 ohm - 10 m egohm esistance range Flam e-retardant coatings are standard Tem perature coefficients from ±25 to ±1 OOppm/ C R esistance range tolerance of ±0.1% - 1%