ESCC MONOLITHIC Search Results

MQFPF256

Abstract: SPARC 7 specification of 56k resistor TSC695F TSC695 T56 marking
Contextual Info: Pages 1 to 49 INTEGRATED CIRCUITS, SILICON MONOLITHIC, 32-BIT SPARC EMBEDDED PROCESSOR, BASED ON TYPE TSC695F ESCC Detail Specification No. 9512/003 Issue 2 February 2006 Document Custodian: European Space Agency - see https://escies.org ESCC Detail Specification No. 9512/003

MCGA-349

Abstract: MQFPF196 988000
Contextual Info: Pages 1 to 29 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS, GATE ARRAY/EMBEDDED ARRAY BASED ON TYPE MH1RT ESCC Detail Specification No. 9202/076 Issue 2 July 2007 Document Custodian: European Space Agency - see https://escies.org ESCC Detail Specification No. 9202/076

mcga

Abstract: MCGA-349 MCGA472 MQFPF196 MCGA349 bi 370 transistor MQFPT352 988000 E1 3007
Contextual Info: Pages 1 to 29 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS, GATE ARRAY/EMBEDDED ARRAY BASED ON TYPE MH1RT ESCC Detail Specification No. 9202/076 Issue 3 March 2010 Document Custodian: European Space Agency - see https://escies.org ESCC Detail Specification No. 9202/076

9202076

Abstract: TH1M156ER LGA-349 LGA-472 Po11 T MCGA-349 max 3734 TH1M242ER MQFPT352 324A1
Contextual Info: Pages 1 to 34 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS, GATE ARRAY/EMBEDDED ARRAY BASED ON TYPE MH1RT ESCC Detail Specification No. 9202/076 Issue 4 November 2010 Document Custodian: European Space Agency - see https://escies.org ESCC Detail Specification No. 9202/076

P0737

Abstract: 256X8 80C32 80C32E
Contextual Info: Pages 1 to 30 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS 8-BIT ROMLESS MICROCONTROLLER BASED ON TYPE 80C32E ESCC Detail Specification No. 9521/002 Issue 2 October 2007 Document Custodian: European Space Agency - see https://escies.org ESCC Detail Specification No. 9521/002

MQFPF256

Abstract: O349
Contextual Info: Pages 1 to 23 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS DIGITAL, FIELD PROGRAMMABLE GATE ARRAY, 40000 GATES BASED ON TYPE AT40KEL040 ESCC Detail Specification No. 9304/008 Issue 1 January 2006 Document Custodian: European Space Agency - see https://escies.org

M65608E

Abstract: DJ-65608EV-30
Contextual Info: European Space Components Coordination Pages 1 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS STATIC 128k x 8 131072 x 8 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUPUTS, BASED ON TYPE M65608E ESCC Detail Specification No. 9301/047 ISSUE 1 February 2004

Contextual Info: Pages 1 to 22 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS 512K X 8-BIT, ASYNCHRONOUS STATIC RANDOM ACCESS MEMORY BASED ON TYPE 60142 ESCC Detail Specification No. 9301/052 Issue 1 January 2006 Document Custodian: European Space Agency - see https://escies.org

en1 3009

Abstract: 56KQ MQFP-F256 EM 222 raft pd TSC695F uart example used in k60 l17h 2360D
Contextual Info: INTEGRATED CIRCUITS, SILICON MONOLITHIC, 32-BIT SPARC EMBEDDED PROCESSOR, BASED ON TYPE TSC695F ESCC Detail Specification No. 9512/003 ISSUE 1 February 2004 esa = 11 ss = -i- 1 1 1 iis = a ii: a Document Custodian: European Space Agency - see https://escies.org

65609E

Contextual Info: Pages 1 to 22 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS, 128K X 8-BIT, ASYNCHRONOUS STATIC RANDOM ACCESS MEMORY WITH THREE STATE OUTPUTS BASED ON TYPE 65609E ESCC Detail Specification No. 9301/053 Issue 1 October 2007 Document Custodian: European Space Agency - see https://escies.org

XI 3003

Abstract: XI 3003 h escc monolithic
Contextual Info: Pages 1 to 27 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS, STATIC 4K X 9BIT, PARALLEL FIRST IN FIRST OUT MEMORY WITH THREE STATE OUTPUTS BASED ON TYPE 67204H ESCC Detail Specification No. 9301/049 Issue 1 October 2007 Document Custodian: European Space Agency - see https://escies.org

DMD15

Abstract: TSC21020F PMD21 PMD32 PMD24 pmd41 Drivers 3003 PMD35 PMD47
Contextual Info: Pages 1 to 37 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS 32/40-BIT IEEE FLOATING POINT DIGITAL SIGNAL PROCESSOR, WITH THREE STATE OUTPUTS BASED ON TYPE TSC21020F ESCC Detail Specification No. 9512/002 Issue 3 June 2008 Document Custodian: European Space Agency - see https://escies.org

A12L

Abstract: 67025E marking a0l TPD3003 lbl 142
Contextual Info: Pages 1 to 36 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS 8K X 16 DUAL-PORT STATIC RANDOM ACCESS MEMORY WITH THREE STATE OUTPUTS BASED ON TYPE 67025E ESCC Detail Specification No. 9301/050 Issue 1 October 2007 Document Custodian: European Space Agency - see https://escies.org

F222M

Abstract: 65608E-45
Contextual Info: Pages 1 to 22 INTEGRATED CIRCUITS, SILICON MONOLITHIC, LOW POWER, CMOS 128K X 8 ASYNCHRONOUS STATIC RANDOM ACCESS MEMORY WITH THREE STATE OUTPUTS BASED ON TYPE 65608E ESCC Detail Specification No. 9301/047 Issue 2 October 2007 Document Custodian: European Space Agency - see https://escies.org

PMA18

Abstract: TSC21020F IRQ30 21020F
Contextual Info: INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS 32/40-BIT IEEE FLOATING POINT DIGITAL SIGNAL PROCESSOR, BASED ON TYPE TSC 21020 F ESCC Detail Specification No. 9512/002 ISSUE 2 March 2005 esa - = n : w i n ii» = e i s :d Document Custodian: European Space Agency - see https://escies.org

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

ESCC 9202/046

Abstract: 9408-005 HCC40106BK1 HCC4052BK1 HCC4050BK HCC4538BK1 HCC4094BK1 HCC4029BK1 HCC4060BK HCC4050BK1
Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

HCC4050BK1

Abstract: HCC4094BK1 HCC40109BK1 hcc4008bk1 HCC4067BK1 HCC4013BK1 HCC4081BK1 HCC4066 HCC4047BK1 HCC4067BK
Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current