ERW01 Search Results

fast recovery diode 600v 5A

Abstract: "Power Diode" 600v ERW01-060
Contextual Info: ERW01-060 5A/600V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current

ERW01-060

Contextual Info: SPECI F I CAT I ON DEVICE NAME : SILICON DIODE TYPE NAME : E RW O 1 - 0 6 0 SPEC. No. : DATE F u j i E l e c t r i c Co. Ltd. T his S p e c ific a tio n is subject to change without notice. DRAWN [ CKKXEO DATE - NAME approved Fuji Electric Cadici. 1/6 R a t i n g s and c h a r a c t e r i s t i c s of Fuji

LT 220 diode

Contextual Info: DISCRETE IGBT 600 VO LT, D IS C R E T E IGBT • 5-50 Amps Device Vces !' Type Volts 60B 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 600 600 600 600 600 V g e =15V lc Cont. Pc Per&BT VcE sal Max. Amps 5 10 15 20 30 50 Watts Volts 3.0 3.0

ERW01-060

Contextual Info: SPECI F I CAT I ON DEVICE NAME : SILICON DIODE TYPE NAME : E RW O 1 - 0 6 0 SPEC. No. : DATE F u j i E l e c t r i c Co. Ltd. T his S p e c ific a tio n is subject to change without notice. DRAWN [ CKKXEO DATE - NAME approved Fuji Electric Cadici. 1/6 R a t i n g s and c h a r a c t e r i s t i c s of Fuji

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

igbt 200v 20a

Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900

tc122 25

Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060

2MBI450U4E-120

Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
Contextual Info: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！

Contextual Info: X S S P E C I F I C A T I O N 4 DEVICE NAME : SILICON DIODE_ TYPE NAME : E RWO SPEC. No. : - - - DATE_ :_. 1 - Q 6 0 _ _ Fuji E l e c t r i c Co.Ltd. This Specification is subject to change without notice.