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Panasonic Electronic Components ERJ-8GEYJ100V RES SMD 10 OHM 5% 1/4W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-8GEYJ100V	Cut Tape	161,260		1	1 $0.13 10 $0.065 100 $0.0362 1000 $0.02242 10000 $0.02242	Buy Now
	ERJ-8GEYJ100V	Digi-Reel	161,260		1	1 $0.13 10 $0.065 100 $0.0362 1000 $0.02242 10000 $0.02242	Buy Now
	ERJ-8GEYJ100V	Reel	160,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.01564	Buy Now
Mouser Electronics	ERJ-8GEYJ100V		33,462			1 $0.13 10 $0.043 100 $0.026 1000 $0.022 10000 $0.014	Buy Now
Verical	ERJ-8GEYJ100V		1,073,881		1,421	1 - 10 - 100 - 1000 - 10000 $0.014	Buy Now
	ERJ-8GEYJ100V		939,031		1,220	1 - 10 - 100 - 1000 - 10000 $0.0047	Buy Now
	ERJ-8GEYJ100V		175,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.0159	Buy Now
	ERJ-8GEYJ100V		47,700		5,000	1 - 10 - 100 - 1000 - 10000 $0.0135	Buy Now
Arrow Electronics	ERJ-8GEYJ100V		939,031		1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	ERJ-8GEYJ100V	Cut Tape	47,700		1	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
	ERJ-8GEYJ100V	Reel			50,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	ERJ-8GEYJ100V	Reel			5,000	1 $0.013 10 $0.013 100 $0.013 1000 $0.013 10000 $0.012	Buy Now

Onlinecomponents.com	ERJ-8GEYJ100V		175,000			1 - 10 - 100 - 1000 - 10000 $0.013	Buy Now
Bristol Electronics	ERJ-8GEYJ100V		24,688			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	ERJ-8GEYJ100V	Reel	75,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.0112	Buy Now
Chip1Stop	ERJ-8GEYJ100V	Cut Tape	1,073,881			1 - 10 - 100 $0.0232 1000 $0.0176 10000 $0.0112	Buy Now
Master Electronics	ERJ-8GEYJ100V		175,000			1 - 10 - 100 - 1000 - 10000 $0.013	Buy Now
New Advantage Corporation	ERJ-8GEYJ100V		45,000		1	1 - 10 - 100 - 1000 - 10000 $0.0169	Buy Now
Panasonic Electronic Components ERJ8GEYJ100V SMD Chip Resistor, 10 Ohm, ? 5%, 250 mW, 1206 [3216 Metric], Thick Film, General Purpose - Tape and Reel (Alt: ERJ-8GEYJ100V)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	ERJ8GEYJ100V	Reel	35,000	22 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.01193	Buy Now
	ERJ8GEYJ100V	Ammo Pack		29 Weeks, 1 Days	1	1 $0.149 10 $0.05 100 $0.03 1000 $0.024 10000 $0.018	Buy Now
Bristol Electronics	ERJ8GEYJ100V		20,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	ERJ8GEYJ100V		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	ERJ8GEYJ100V		44,733			1 $0.04 10 $0.04 100 $0.04 1000 $0.04 10000 $0.0075	Buy Now
	ERJ8GEYJ100V		44,733			1 $0.04 10 $0.04 100 $0.04 1000 $0.04 10000 $0.0075	Buy Now
	ERJ8GEYJ100V		20,409			1 $0.2 10 $0.2 100 $0.2 1000 $0.2 10000 $0.04	Buy Now
	ERJ8GEYJ100V		20,409			1 $0.2 10 $0.2 100 $0.2 1000 $0.2 10000 $0.04	Buy Now
	ERJ8GEYJ100V		13,657			1 $0.075 10 $0.075 100 $0.075 1000 $0.075 10000 $0.015	Buy Now
	ERJ8GEYJ100V		13,657			1 $0.075 10 $0.075 100 $0.075 1000 $0.075 10000 $0.015	Buy Now
	ERJ8GEYJ100V		12,960			1 $0.075 10 $0.075 100 $0.075 1000 $0.025 10000 $0.015	Buy Now
	ERJ8GEYJ100V		12,960			1 $0.075 10 $0.075 100 $0.075 1000 $0.025 10000 $0.015	Buy Now
	ERJ8GEYJ100V		6,420			1 $0.0405 10 $0.0405 100 $0.0405 1000 $0.0135 10000 $0.0081	Buy Now
	ERJ8GEYJ100V		6,420			1 $0.0405 10 $0.0405 100 $0.0405 1000 $0.0135 10000 $0.0081	Buy Now
	ERJ8GEYJ100V		4,000			1 $0.054 10 $0.054 100 $0.054 1000 $0.018 10000 $0.0054	Buy Now
	ERJ8GEYJ100V		4,000			1 $0.054 10 $0.054 100 $0.054 1000 $0.018 10000 $0.0054	Buy Now
	ERJ8GEYJ100V		3,729			1 $0.075 10 $0.075 100 $0.075 1000 $0.025 10000 $0.015	Buy Now
	ERJ8GEYJ100V		3,729			1 $0.075 10 $0.075 100 $0.075 1000 $0.025 10000 $0.015	Buy Now
TME	ERJ8GEYJ100V				5,000	1 - 10 - 100 - 1000 - 10000 $0.0089	Get Quote
ComSIT USA	ERJ8GEYJ100V		4,673			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Abacus	ERJ8GEYJ100V	Reel		25 Weeks	50,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERJ-8GEYJ100V-CUT TAPE Resistor, Thick Film, Res 10 Ohms, Pwr-Rtg 0.25 W, Tol 5%,SMT,1206,Cut Tape \| Panasonic Electronic Components ERJ-8GEYJ100V-Cut Tape
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	ERJ-8GEYJ100V-CUT TAPE	Bulk	89,555		50,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERJ-8GEYJ100V-T/R Resistor, Thick Film, Res 10 Ohms, Pwr-Rtg 0.25 W, Tol 5%,SMT,1206,Tape & Reel \| Panasonic Electronic Components ERJ-8GEYJ100V-T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	ERJ-8GEYJ100V-T/R	Bulk			50,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Corporation ERJ-8GEYJ100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	ERJ-8GEYJ100V		2,793			1 - 10 - 100 - 1000 - 10000 -	Get Quote

ERJ8GEYJ100V Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ERJ8GEYJ100V		Panasonic	RES 10-OHM 5% 0.25W 200PPM THK-FILM SMD-1206 TR-7-PA		Original	PDF
ERJ-8GEYJ100V		Panasonic Electronic Components	Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206		Original	PDF

ERJ8GEYJ100V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5.1 subwoofer printed circuit board Abstract: 5.1 audio amplifier board 5.1 home theatre circuit 5.1 sound system circuit board MP7720DS 5.1 Channel Audio Board MP7782DF 5.1 Channel audio amplifier 5.1 audio power amplifier 5.1 audio circuit Text: TM EV7720DS-7782-00D 150W Class D 5.1 Channel Audio Board The Future of Analog IC Technology TM EVALUATION BOARD GENERAL DESCRIPTION FEATURES The EV7720DS-7782-00D is an evaluation board for using MPS’ Class D Audio Amplifiers in 5.1 Surround Sound systems. The board has	Original	PDF	EV7720DS-7782-00D EV7720DS-7782-00D MP7720DS) MP7782) 5.1 subwoofer printed circuit board 5.1 audio amplifier board 5.1 home theatre circuit 5.1 sound system circuit board MP7720DS 5.1 Channel Audio Board MP7782DF 5.1 Channel audio amplifier 5.1 audio power amplifier 5.1 audio circuit
Untitled Abstract: No abstract text available Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928 RF3928280W DS120508
Untitled Abstract: No abstract text available Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse	Original	PDF	RFHA1020 DS120508
EI -40C Abstract: No abstract text available Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical	Original	PDF	RF3933 DS120306 EI -40C
Untitled Abstract: No abstract text available Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928B DS120503
Untitled Abstract: No abstract text available Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To	Original	PDF	RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm
Untitled Abstract: No abstract text available Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928B RF3928B DS120503
Untitled Abstract: No abstract text available Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RFHA1025 RFHA1025 96GHz 215GHz DS120613
Untitled Abstract: No abstract text available Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology	Original	PDF	RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm
SEMICONDUCTOR J598 Abstract: No abstract text available Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse	Original	PDF	RFHA1023 RFHA1023 DS120508 SEMICONDUCTOR J598
RFG1M20180 Abstract: ATC800B820JT Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to	Original	PDF	RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT
Untitled Abstract: No abstract text available Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical	Original	PDF	RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc
RFG1M20180SB Abstract: j35 fet RFG1M20180SQ Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to	Original	PDF	RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ
GaN hemt Abstract: power transistor gan s-band air surveillance system diagram using radar Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar

Untitled Abstract: No abstract text available Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical	Original	PDF	RF3934 RF3934 DS120306
RFHA1023 Abstract: SEMICONDUCTOR J598 Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation	Original	PDF	RFHA1023 RFHA1023 DS110630 SEMICONDUCTOR J598
Untitled Abstract: No abstract text available Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to	Original	PDF	RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406
GRM55ER72A475KA01L Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance	Original	PDF	RF3934 RF3934 DS111005 GRM55ER72A475KA01L DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
ATC100B620 Abstract: L22 amplifier Gan hemt transistor RFMD Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	PDF	RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD
Untitled Abstract: No abstract text available Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium	Original	PDF	RFHA1027 RFHA1027 DS131216
Untitled Abstract: No abstract text available Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed	Original	PDF	RFG1M20090 RFG1M20090 DS130823
Untitled Abstract: No abstract text available Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier	Original	PDF	RF3933 RF3933 DS130905
Untitled Abstract: No abstract text available Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier	Original	PDF	RF3934 RF3934 DS131206
Untitled Abstract: No abstract text available Text: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high	Original	PDF	RFG1M20180 RFG1M20180 DS130822

ERJ8GEYJ100V Search Results

ERJ8GEYJ100V Price and Stock

Panasonic Electronic Components ERJ-8GEYJ100V

Panasonic Electronic Components ERJ8GEYJ100V

Panasonic Electronic Components ERJ-8GEYJ100V-CUT TAPE

Panasonic Electronic Components ERJ-8GEYJ100V-T/R

Panasonic Corporation ERJ-8GEYJ100V

ERJ8GEYJ100V Datasheets (2)

ERJ8GEYJ100V Datasheets Context Search

5.1 subwoofer printed circuit board

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EI -40C

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SEMICONDUCTOR J598

RFG1M20180

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RFG1M20180SB

GaN hemt

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RFHA1023

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GRM55ER72A475KA01L

ATC100B620

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