ERICSSON RF POWER TRANSISTOR Search Results

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Abstract: 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Contextual Info: ERICSSON ^ PTB 20173 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and

RF NPN POWER TRANSISTOR 3 GHZ

Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Contextual Info: ERICSSON ^ PTE 20173* 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and

transistor 20201

Abstract: jarvis
Contextual Info: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power

TRANSISTOR cBC 415

Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
Contextual Info: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details

Contextual Info: ERICSSON ^ PTB 20029 1.5 Watts, 420 - 470 MHz UHF RF Power Transistor Key Features Description The 20029 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 420470 MHz frequency band. It is rated at 1.5 Watts minimum

Contextual Info: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power

Contextual Info: ERICSSON ^ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier

tic6064

Abstract: 850-960MHz
Contextual Info: ERICSSON $ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor D escription The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier

Contextual Info: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description Key Features The 20003 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 4 Watts minimum output power

Contextual Info: ERICSSON ^ PTB 20191 12 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

L450A

Abstract: NPN transistor 5 watts Ericsson RF POWER TRANSISTOR
Contextual Info: ERICSSON ^ PTE 20231 * 18 Watts, 2.1-2.2 GHz Cellular Radio RF Power Transistor Description The 20231 isaclassA/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Bated at 18 watts minimum output power in class AB and 8 watts minimum output power

Contextual Info: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description The 20174 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1400 to 1600 MHz frequency band. Rated at 90 watts minimum output power, it may be used for

transistor Pout 5W

Contextual Info: ERICSSON ^ PTB 201 59 5 Watts, 900 MHz RF Power Transistor Preliminary Description Key Features The 20159 is NPN, common emitter RF Power Transistor intended for 24VDC operation across the 850-960 MHz frequency band. It is rated at 5 Watts minimum output power and may be used for

TRANSISTOR 185

Abstract: Ericsson RF POWER TRANSISTOR
Contextual Info: ERICSSON ^ PTE 20124* 40 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular

transistor tic 226

Contextual Info: ERICSSON ^ PTB 20220 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,

20224

Contextual Info: ERICSSON ^ PTB 20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it

Contextual Info: ERICSSON ^ PTB 20004 50 Watts, 860 - 900 MHz Cellular Radio RF Power Transistor Description Key Features The 20004 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the860-900 MHz frequency band. It is rated at 50 Watts minimum output power

Contextual Info: ERICSSON ^ E 20080* 25 Watts, 1.6-1.7 GHz RF Power Transistor Description The 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP

Contextual Info: ERICSSON 9 PTB 20135 85 Watts,925-960 MHz Cellular Radio RF Power Transistor Description Key Features The 20135 is a class AB, NPN common emitter RF Power Transistor intended for 26 VDC operation across 925-960 MHz frequency band. It is rated at 85 Watts minimum output power

20191

Contextual Info: ERICSSON $ PTB 20191 12 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20191 is a class AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated at 12 Watts minimum output power (CW) or 15 Watts output power (PEP).

Contextual Info: ERICSSON PTB 20074 14 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Key Features Description The 20074 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 14 Watts minimum

InMarSat power

Contextual Info: ERICSSON ^ PTB 20079 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10

26VDC

Contextual Info: ERICSSON ^ PTB 20046 1 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Description Key Features The 20046 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 1 Watts minimum

Contextual Info: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for