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    Abstract: No abstract text available
    Text: IRFS710A Advanced Power MOSFET FEATURES BVDSs - Low R s(on) • 2.815 O (Typ.) CD I ^ D S(on) = II Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA(Max.) @ VDS= 400V


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