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    VUO50

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES B • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 uA M ax. @ ■ V q s 2 = s ^D S(on) =


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