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    ERA81 SCHOTTKY Search Results

    ERA81 SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    ERA81 SCHOTTKY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ERA81-004

    Abstract: No abstract text available
    Text: ERA81-004 SCHOTTKY-BARRIER RECTIFIER DIODES PRV : 40 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop


    Original     		PDF ERA81-004 DO-41 UL94V-O MIL-STD-202, ERA81-004

    diode 0.2 V 1A

    Abstract: ERa81 schottky
    Text: ERA81-004 1A (40V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø3.0 ø0.6 5.0 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Super high speed switching Voltage class -004 Lot No. 02 High reliability by planer design Cathode mark •··


    Original     		PDF ERA81-004 diode 0.2 V 1A ERa81 schottky

    Untitled

    Abstract: No abstract text available
    Text: ERA81-004 1A (40V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø3.0 ø0.6 5.0 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Super high speed switching Voltage class -004 Lot No. 02 High reliability by planer design Cathode mark •··


    Original     		PDF ERA81-004

    Untitled

    Abstract: No abstract text available
    Text: ERA81-004 SCHOTTKY-BARRIER RECTIFIER DIODES PRV : 40 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed


    Original     		PDF ERA81-004 DO-41 UL94V-O MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: ERA81-004 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)1.0


    Original     		PDF ERA81-004 Voltage45 Voltage550m

    TL130

    Abstract: tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004
    Text: 整流ダイオード / Rectifier Diodes • ショットキーバリアダイオード Schottky-Barrier Diodes（SBD） シングル 1 in one-package 形 式 Device type ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009


    Original     		PDF ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 CB803-03 TL130 tc122 25 8 4 yg802c10 SD883-04 SD833-04 LM3661TL-1.40 TC8520 tc9145 TS802C09 ERA82-004

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    aajf

    Abstract: No abstract text available
    Text: ERA81-004 1a * ± 'J 'W.M'W-Y : Outline Drawings -f= t— K SCHOTTKY BARRIER DIODE : Features • ffiV r • Low Vp : Marking A 7 —n — K : ffl Color code : Silver Super high speed sw itchin g. High reliability by planer design. Voltage class : Applications


    OCR Scan     		PDF ERA81-004 aajf

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,


    OCR Scan     		PDF ERA82-004 ERA83-004 ERA81-004 ERB83-004 ERC81-004 ERC81S-004 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004

    era-84

    Abstract: 104C smd ERE81-004
    Text: —K / Rectifier Diodes m -it i/yjil Schottky-Barrier Diodes SBD 1 in one-package 1 Ä Device type SMD i'tiSno Maximum rating Viww *1 If i a v ) ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 ERB83-004 ERB83-006 ERB81-004


    OCR Scan     		PDF ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 ERB83-004 era-84 104C smd ERE81-004

    Untitled

    Abstract: No abstract text available
    Text: ERA81-004 1A I scHOTTKY b a r r i e r dio de Outline Drawing ¡*3.0 $ 0.6 • a # 25 min 25" 5.0 DO-41 ■ Marking ■ Features • Lo w V f Color code : Silver • Super high speed switching • High reliability by planer design Voltage class ■ Applications


    OCR Scan     		PDF ERA81-004 DO-41 500ns, ERA81

    ERA81-004

    Abstract: a324 arej
    Text: E RA81-004 1a '> a "A * r—'< l) 7 ÿ -f=t— K • O utline D raw ings SCHOTTKY BARRIER DIODE • t t f t : Features • te V F ■ S Low VF tjv • x -r : M arking Ä 7 " 3 — K ffl Color code : Silver Super high speed switching. High reliability by planer design.


    OCR Scan     		PDF ERA81-004 40Vpeak a324 arej

    RA81-004

    Abstract: No abstract text available
    Text: E RA81-004 1a ' > a " A * r — ' < l) 7 ÿ - f = t — K • O utline D raw ings SCHOTTKY BARRIER DIODE • t t f t : Features • te V F ■ S Low VF tjv : M arking • x -r Ä 7 " 3 —K ffl Color code : Silver Super high speed switching. High reliability by planer design.


    OCR Scan     		PDF RA81-004 l95t/R89

    ERA81-004

    Abstract: 10SINE
    Text: E RA81-004 1a '> a "A * r—'< l) 7 ÿ -f=t— K • O utline D raw ings SCHOTTKY BARRIER DIODE • t t f t : Features • te V F ■ S Low VF tjv • x -r : M arking Ä 7 " 3 — K ffl Color code : Silver Super high speed switching. High reliability by planer design.


    OCR Scan     		PDF ERA81-004 40Vpeak 10SINE

    ERA81-004

    Abstract: T810 ERA8
    Text: E RA81-004 1a i'a-yl'lF— ' O J T ÿ ' f j K • f l-B '+ '/i : Outline Drawings SCHOTTKY BARRIER ■ t t f t : Features • te V F ■ S Low VF : Marking tjv • x -r Ä 7 “ 3 —K : Super high speed switching. C o lo r c o d e ffl : S ilv e r High reliability by planer design


    OCR Scan     		PDF ERA81-004 eaTS30 EmM-TmiS19* I95t/R89) T810 ERA8

    to125

    Abstract: ERA81 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERA85-009 ERB83-004 ERB83-006 SC802-04
    Text: Schottky-Barrier Diodes Single package Ratings and characteristics T h e rm a l ra tin g M a x im u m ra tin g Type V rrm lo V o lts Am ps. IfSM * 2 #1 T j a n d Tstg C h a ra c te ris tic s T a = 2 5 °C (firm * 3 V fm M a ss D im e n s io n s Fig. N o.


    OCR Scan     		PDF ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81 O-22QF17 T0-220F15 ERG81A) to125 ERA84-009 ERA85-009 ERB83-004 ERB83-006

    DIODE S4 29

    Abstract: No abstract text available
    Text: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be


    OCR Scan     		PDF