ERA-2SM E2 Search Results
ERA-2SM E2 Datasheets Context Search
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Mini-circuits marking code
Abstract: VV105 ERA-3SM 99 ERA-3SM E3 monolithic ERA 5 ERA monolithic amplifier WW107 ERA-2SM E2 era-3 e3 era12
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M106237 Mini-circuits marking code VV105 ERA-3SM 99 ERA-3SM E3 monolithic ERA 5 ERA monolithic amplifier WW107 ERA-2SM E2 era-3 e3 era12 | |
Mini-circuits marking codeContextual Info: Monolithic Amplifiers Broadband 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C GAIN, dB Typical FREQ. GHz MODEL NO. over frequency, GHz fl - fu ERA-1 99+ ERA-2 99+ ERA-3 99+ ERA-1SM 99+ DC-8 ERA-2SM 99+ DC-6 ERA-3SM 99+ DC-3 |
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M128455 Mini-circuits marking code | |
e6xx
Abstract: alphanumeric
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ERA-3SM E3
Abstract: era-3 e3 ERA-2SM E2 ERA-3SM 03 ERA-6 Mini-Circuits RF Amplifier
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marking E5 amplifier
Abstract: ERA monolithic amplifier vv105 mini ERA-3SM VV105 3SM diode ERA-4 ERA-1 ERA-4SM nf ERA-6SM
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vv105
Abstract: era-3 e3 ERA-3SM E3
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Mini-Circuits ERA-1SM
Abstract: ERA-3SM 99 marking E5 amplifier ERA-4SM nf 3SM diode cb amplifier ERA-1SM ERA-4SM marking code k1 ERA-3SM E3
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12Years) Mini-Circuits ERA-1SM ERA-3SM 99 marking E5 amplifier ERA-4SM nf 3SM diode cb amplifier ERA-1SM ERA-4SM marking code k1 ERA-3SM E3 | |
Contextual Info: C 3 M ini-Circuits* M A m plifiers onolithic 50Q Drop-In & Surface M ount B roadband DC to 8 GHz r> All specificotions o f 25°C G A IN , dB Typical Ö FREQ. GHz a t 2 G H z* Output Flatness 1 dB Input M in . DCC om p. (no 2 G H z 2 GHz Typ. Min. dm g.) |
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Contextual Info: Mini-Circuits* M o n o lith ic A m p lifie r s 50Q Drop-In & Surface Mount B roadband DC to 8 GHz All specifications at 25°C G A IN . dB T y p ic a l Ö FREQ GHz ovei frequency, GHz MODEL NO. ERA-1 ERA-2 ERA-3 H , 0.1 1 2 3 4 6 8 D C -8 12.2 12.1 11.8 11.5 11.3 11.0 10.2 |
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Contextual Info: M onolithic A m plifier s 50Q Drop-In & Surface Mount Broadband DCto8 GHz V- ERA ERA-SM All specifications at 25°C GAIN, dB Typical POWER, dBm m over frequency, GHz MODEL NO- f,'fu 0.1 1 2 ERA-1 ERA-2 ERA-3 ERA-4 ERA-5 DC-8 DC-6 DC-3 DC-4 DC-4 11.8 16.0 |
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Contextual Info: EL2072C H GH »iH.-RMA.NCE ASALOü INTEGREE 1? C - T ., ' S 730 MHz Closed Loop Buffer F e a tu r e s G en era l D e sc r ip tio n • 730 M Hz —3 dB bandwidth 0.5 Vpp • 5 ns settling to 0.2% • Vs = ± 5V @ 15 mA • Low distortion: HD2, HD3 of - 6 5 dBc at 20 M Hz |
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EL2072C CLC110 EL2072 | |
Contextual Info: H SP43481/883 HARRIS Digital Filter Ju n e 1 9 9 0 Features • Description This Circuit is Processed in accordance to Mil-Std-883C and is Fully Conformant Under the Provisions of Paragraph 1.2.1 • 0 to 25.6MHz Sample Rate • Four Filter Cells • 8 Bit Coefficients and Signal Data |
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SP43481/883 Mil-Std-883C 500pA 20MHz | |
SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
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Burr Brown 3510am
Abstract: ner eN8 capacitor 3421J A5 GNC mosfet OPA103 OPA104 TF 6221 HEN LED display LOG100 3510CM Burr Brown OPA Application Reference
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B5734 305/395-61C8 Burr Brown 3510am ner eN8 capacitor 3421J A5 GNC mosfet OPA103 OPA104 TF 6221 HEN LED display LOG100 3510CM Burr Brown OPA Application Reference | |
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
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thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p |