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    EQUIVALENT TRANSISTOR CMS Search Results

    EQUIVALENT TRANSISTOR CMS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT TRANSISTOR CMS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    R2632

    Abstract: I-ETS-300-220 S M R2632 transistor substitution chart saw resonator r2632 R2632 resonator 433.92 Mhz two-port saw resonator RF pcb antenna 434 HiSeC saw Colpitts circuit design
    Text: Fairchild Application Note 1021 March 1997 INTRODUCTION In the recent years short range unlicensed RF links have become very popular for a wide variety of applications in the field of remote control, data exchange, keyless entry systems, and others. The most popular frequency in Europe for


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    specificat80-530 an012566 R2632 I-ETS-300-220 S M R2632 transistor substitution chart saw resonator r2632 R2632 resonator 433.92 Mhz two-port saw resonator RF pcb antenna 434 HiSeC saw Colpitts circuit design PDF

    Widlar

    Abstract: AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER
    Text: Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions. Still


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    an009301 Widlar AN009301-11 AN-446B 800W TRANSISTOR npn 446B LM12 150w darlington transistor to3 package 600W TRANSISTOR AUDIO AMPLIFIER PDF

    2N2222 die

    Abstract: light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222
    Text: INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package power dissipation. In RF transistors, devices are now available and able to withstand badly mismatched loads without


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    an007418 2N2222 die light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222 PDF

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


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    SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 PDF

    CMSD4448

    Abstract: Coiltronics CTX03 2n2907 SOT23 91A SOT23 SOT23 npn 91A EMK325BJ106MN IRF620S LMK432BJ226MM MAX5003 MAX5003EVKIT
    Text: 19-1914; Rev 1; 1/01 MAX5003 Evaluation Kit Features ♦ 5V at 1A Output The MAX5003 EV kit is a fully assembled and tested surface-mount printed circuit PC board. It comes with the output voltage set to 5V. This EV kit is configured as a flyback converter, and can easily be configured for


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    MAX5003 MAX5003 CMSD4448 Coiltronics CTX03 2n2907 SOT23 91A SOT23 SOT23 npn 91A EMK325BJ106MN IRF620S LMK432BJ226MM MAX5003EVKIT PDF

    pin diagram for IC cd 1619 fm receiver

    Abstract: ml 1136 triac Transistor 337 DIODE 2216 yagi-uda Antenna bistable multivibrator using ic 555 NEC plasma tv schematic diagram Digital Panel Meter PM 428 555 solar wind hybrid charge controller CLOVER-2000
    Text: Index Editor’s Note: Except for commonly used phrases and abbreviations, topics are indexed by their noun names. Many topics are also cross-indexed. The letters “ff” after a page number indicate coverage of the indexed topic on succeeding pages. A separate Projects index follows the main index.


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    Coiltronics CTX03

    Abstract: CMSD4448 CTX03 LVL MAXIM Motorola MBRS130L capacitor .1m 100v npn high voltage transistor 500v sot23 isolated feedback flyback converter n1 sot23 optocoupler pnp
    Text: 19-1591; Rev 0; 11/99 MAX5003 Evaluation Kit Features ♦ 5V at 1A Output The MAX5003 EV kit is a fully assembled and tested surface-mount printed circuit PC board. It comes with the output voltage set to 5V. This EV kit is configured as a flyback converter, and can easily be configured for


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    MAX5003 MAX5003 Coiltronics CTX03 CMSD4448 CTX03 LVL MAXIM Motorola MBRS130L capacitor .1m 100v npn high voltage transistor 500v sot23 isolated feedback flyback converter n1 sot23 optocoupler pnp PDF

    diode SD3

    Abstract: NEC-TOKIN America
    Text: MF1531-03 Power Supply IC S1F81100F0R/S1F81100F5R Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


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    MF1531-03 S1F81100F0R/S1F81100F5R wa3-544-2491 diode SD3 NEC-TOKIN America PDF

    BP 109 transistor

    Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
    Text: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.


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    AI1010 CHK015A AN0019 AN0020 ES-CHK015A-SMA AI10101182 BP 109 transistor transistor BP 109 CHK015A-SMA HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01 PDF

    PE-64287

    Abstract: 1N5819 AB-30 LM1578A
    Text: INTRODUCTION A large segment of today’s systems comply with the Electronic Industries Association EIA RS-232 specification for the interface between data processing and data communications equipment. Because this specification calls for the use of positive and negative signal levels, the designer quite often needs to add a dual supply to a board which can otherwise operate from a single 5V supply. The LM1578A Switching Regulator can be used to convert the already existing


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    RS-232 LM1578A an008756 PE-64287 1N5819 AB-30 PDF

    CHK040A-SOA

    Abstract: CHK-04
    Text: Advance Information: AI1011 40W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK040A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.


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    AI1011 CHK040A AN0019 AN0020 ES-CHK040A-SOA AI1011182 CHK040A-SOA CHK-04 PDF

    BRIDGE-RECTIFIER 10v ,1A

    Abstract: BRIDGE-RECTIFIER 1A 800w power amplifier circuit diagram BRIDGE-RECTIFIER 800w audio amplifier circuit diagram APPLICATION OF BRIDGE-RECTIFIER IC 8112-AG7 K04A LM12 800w audio Amplifier
    Text: General Description The LM12 is a power op amp capable of driving ± 25V at ± 10A while operating from ± 30V supplies. The monolithic IC can deliver 80W of sine wave power into a 4Ω load with 0.01% distortion. Power bandwidth is 60 kHz. Further, a peak dissipation capability of 800W allows it to handle reactive loads such as transducers, actuators or small motors


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    ds008704 BRIDGE-RECTIFIER 10v ,1A BRIDGE-RECTIFIER 1A 800w power amplifier circuit diagram BRIDGE-RECTIFIER 800w audio amplifier circuit diagram APPLICATION OF BRIDGE-RECTIFIER IC 8112-AG7 K04A LM12 800w audio Amplifier PDF

    MOSFET Application Hints

    Abstract: AVALANCHE TRANSISTOR Mosfet application
    Text: The Ruggedness of Paralleled Power MOSFETs Abstract The behavior of power MOSFETs under avalanche conditions has been described in a number of papers. However, only single devices were examined. This paper investigates the avalanche action of power MOSFETs connected in parallel. A disadvantage of this


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    Untitled

    Abstract: No abstract text available
    Text: • DESCRIPTION The FUJITSU MB3782 is a PWM-type switching regulator controller, designed with open-collector output for connection to external drive transistors and coils, providing a selection of three types of output voltage: stepup, step-down or inverting inverting output is available on one circuit only .


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    MB3782 F9803 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHK015A-SMA 15W Power Packaged Transistor GaN HEMT on SiC Description The CHK015A-SMA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and


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    CHK015A-SMA CHK015A-SMA 100mA, DSCHK015ASMA3021 PDF

    5 pin voltage comparator IC

    Abstract: FPT-16P-M05 MB3789 MB3789PFV
    Text: ASSP For Power Supply Applications BIPOLAR Switching Regulator Controller Supporting External Synchronization MB3789 • DESCRIPTION The MB3789 is a PWM (pulse width modulation) switching regulator controller supporting an external sync signal. The MB3789 incorporates two error amplifiers which can be used respectively for voltage control and current


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    MB3789 MB3789 MB3789PFV 16-pin FPT-16P-M05) 5 pin voltage comparator IC FPT-16P-M05 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHK080A-SRA 80W Power Packaged Transistor GaN HEMT on SiC Description The CHK080A-SRA is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and


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    CHK080A-SRA CHK080A-SRA 600mA, DSCHK080A-SRA3148 PDF

    CMSH3-40

    Abstract: No abstract text available
    Text: LT3507A Triple Monolithic Step-Down Regulator with LDO DESCRIPTION FEATURES n n n n n n n n n Wide Input Range: 4V to 36V One 2.7A and Two 1.8A Output Switching Regulators with Internal Power Switches Low Dropout Linear Regulator with External Transistor Antiphase Switching Reduces Ripple


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    LT3507A 250kHz 38-Lead QFN-24, TSSOP-16E LT3684 DFN-10, MSOP-10E LT3685 CMSH3-40 PDF

    LT3507AFE

    Abstract: LDO regulator 51A CMSH3-40 smb340 13507a SMB34 LT3507 LT3507AIUHF LT3507AEFE Signal Souces Switch
    Text: FEATURES Wide Input Range: 4V to 36V n One 2.7A and Two 1.8A Output Switching Regulators with Internal Power Switches n Low Dropout Linear Regulator with External Transistor n Antiphase Switching Reduces Ripple n Independent Run, Tracking/Soft-Start, and Power


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    250kHz 38-Lead LT3507A QFN-24, TSSOP-16E LT3684 DFN-10, MSOP-10E LT3685 LT3507AFE LDO regulator 51A CMSH3-40 smb340 13507a SMB34 LT3507 LT3507AIUHF LT3507AEFE Signal Souces Switch PDF

    ba9u

    Abstract: JM34R8
    Text: 2 D I7 5 M -1 2 0 7 6 'in — 9 ^ a > 3- - >i : Outline l£f Drawings POWER TRANSISTOR MODULE : Features • • • • 3511(81^4*'' ^' High Arm Short Circuit Capability hFE*x'S '- ' High DC Current Gain 7 U —jfc'f U V W - i =t —K l*JM Including Free Wheeling Diode


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    E829S8 I95t/R89) ba9u JM34R8 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHK040A-SOA 40W Power Packaged Transistor GaN HEMT on SiC Description The CHK040A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and


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    CHK040A-SOA CHK040A-SOA 300mA, DSCHK040ASOA3021 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHK025A-SOA 25W Power Packaged Transistor GaN HEMT on SiC Description The CHK025A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and


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    CHK025A-SOA CHK025A-SOA 200mA, DSCHK025ASOA3021 PDF

    Radar Antenna

    Abstract: working principle of ac servo motor lm12 op amp AN-446 LM12 fast op LM318 radar position control servo motor
    Text: Robert J. Widlar Apartado Postal 541 Puerto Vallarta, Jalisco, Mexico sistor array. The turn-on characteristics are controlled by keeping the output open-circuited until the total supply voltage reaches 15V. The output is also opened should the case temperature exceed 150˚C or as the supply voltage approaches the BVCEOof the output transistors. The IC withstands overvoltages to 100V.


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    an008710 Radar Antenna working principle of ac servo motor lm12 op amp AN-446 LM12 fast op LM318 radar position control servo motor PDF

    Untitled

    Abstract: No abstract text available
    Text: Micropower 5 Volt Regulator D escription The CS-8101 is a precision 5V m icropower voltage regulator w ith very low quiescent current 70pA typical at IOOjiA load . The 5V out­ p u t is accurate w ithin ±2% and sup­ plies 100mA of load current w ith a typical dropout voltage of only


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    CS-8101 100mA 600mV. CS-8101 CS-8101N8 CS-8101T5 CS-8101TV5 CS-8101TH5 CS-8101? CS-8101DW16 PDF