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    EQUIVALENT TRANSISTOR 241 Search Results

    EQUIVALENT TRANSISTOR 241 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT TRANSISTOR 241 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor tt 2170

    Abstract: TT 2170 660 TG 11823 die 660 tg diode transistor t 2180 High power audio transistor equivalent table 241B MSM9140 19652
    Text: MSSI121/241/241B MOSEL VITELIC INSTANT VOICE ROM Features Single power supply can operate at 2.4V through 6V. Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. The voice content is stored for 7-12 seconds for SI121 13-24 for SI241/241B including mute


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    MSSI121/241/241B SI121 SI241/241B MSM9159 MSM9159B MSSI121/241/241B PID224B transistor tt 2170 TT 2170 660 TG 11823 die 660 tg diode transistor t 2180 High power audio transistor equivalent table 241B MSM9140 19652 PDF

    SOLAR TRANSISTOR

    Abstract: High Power Microwave Device
    Text: MwT-H16 32 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE


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    MwT-H16 MwT-H16 SOLAR TRANSISTOR High Power Microwave Device PDF

    FPH15

    Abstract: No abstract text available
    Text: MwT-H15 38 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • 27 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 52 35 50 35 52 775


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    MwT-H15 MwT-H15 FPH15 PDF

    Untitled

    Abstract: No abstract text available
    Text: MwT-H16 28 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 241 72 50 35 52 52 35 35 52 35 1067 52 35 52 35 50 • 28 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE


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    MwT-H16 MwT-H16 equa75 PDF

    SOLAR TRANSISTOR

    Abstract: MwT-H15
    Text: MwT-H15 38 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • 27 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 52 35 50 35 52 775


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    MwT-H15 MwT-H15 effec300 SOLAR TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: MwT-H15 28 GHz High Power AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM 50 50 FEATURES 75 • 27 dBm POWER OUTPUT AT 12 GHz • 11 dB GAIN AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH 241 72 52 35 50 35 52 775


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    MwT-H15 MwT-H15 PDF

    IR TRansmitter and receiver wikipedia

    Abstract: SIEMENS 565-2 white noise Generator 1GHz ECC85 samsung colour tv kit circuit diagram Kathrein Antennas elektra c radio diagram philips rf manual Funkamateur varactor diode model in ADS
    Text: Semiconductors Appendix RF Manual 6th edition May 2005 date of release: May 2005 document order number: 9397 750 15125 Contents 1. RF Application-Basics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


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    74ACT led driver

    Abstract: philips electrolytic capacitors 3120 10h116 bft92 die fiber-optic link receiver LOG RX1 1012 Siecor 62.5 BFT92 siecor HFBR24X4
    Text: H Low Cost Fiber-Optic Links for Digital Applications up to 155 MBd Application Bulletin 78 The HFBR-2406/16 High Performance Component The HFBR-2406 and HFBR-2416 are high-speed, low-cost, linear, light-to-voltage converters with typical bandwidths of 125 MHz.


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    HFBR-2406/16 HFBR-2406 HFBR-2416 HFBR-24X6: thirCR080510W270JT CR080510W220JT CR080510W510JT CR08051OW620JT CR080510W91OJT CR080510W102JT 74ACT led driver philips electrolytic capacitors 3120 10h116 bft92 die fiber-optic link receiver LOG RX1 1012 Siecor 62.5 BFT92 siecor HFBR24X4 PDF

    MPS536

    Abstract: 10h116 fiber-optic link receiver ECL IC NAND mosfet triggering circuit for inverter HFBR-2416 receiver application notes "Current to Voltage Converter" pseudo random noise sequence generator notes Application notes on HFBR-2416 receiver MosFet Dual emitters catalog
    Text: Low Cost Fiber-Optic Links for Digital Applications up to 155 MBd Application Bulletin 78 The HFBR-2406/16 High Performance Component The HFBR-2406 and HFBR-2416 are high-speed, low-cost, linear, light-to-voltage converters with typical bandwidths of 125 MHz.


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    HFBR-2406/16 HFBR-2406 HFBR-2416 HFBR-24X6: HFBR-0400 CR080510W510JT CR08051OW620JT CR080510W91OJT CR080510W102JT BFT92 MPS536 10h116 fiber-optic link receiver ECL IC NAND mosfet triggering circuit for inverter HFBR-2416 receiver application notes "Current to Voltage Converter" pseudo random noise sequence generator notes Application notes on HFBR-2416 receiver MosFet Dual emitters catalog PDF

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: 2010年3月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorDiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ 2


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    2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7 PDF

    Power Semiconductor Applications Philips Semiconductors

    Abstract: "Power Semiconductor Applications" Philips philips schematic induction cookers stepper motor philips ID 27 connections wire diode S4 68a hef4752v application note HEF4752 single phase ac motor speed control HEF4752V hef4752v Three-Phase Inverters philips igbt induction cooker
    Text: Motor Control Power Semiconductor Applications Philips Semiconductors CHAPTER 3 Motor Control 3.1 AC Motor Control 3.2 DC Motor Control 3.3 Stepper Motor Control 241 Motor Control Power Semiconductor Applications Philips Semiconductors AC Motor Control 243


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    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR bSE » • 43D5271 DDMflbb? 543 H H A S H H A R R IS SEMICONDUCTOR P R ELIM IN A R Y Features 1 M The HIP1031 is a High Side Driver Power Integrated Circuit designed to switch power supply voltage to an output load. It is the equivalent of a P N P pass transistor operated as a


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    HIP1031 1-800-4-HARRIS PDF

    IR2411

    Abstract: ir 2411 transistor K 2411 equivalent
    Text: IR2411 7 -U n it 400m A Darlington Transistor Array IR2411 • 7-Unit 400mA Darlington Transistor Array Pin Connections Description The IR 2411 is a 7-circuit driver. The internal clamping diodes enable the IC to drive the inductive load directly. ■ Features


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    IR2411 400mA 400mA 16-pin 100mA IR2411 ir 2411 transistor K 2411 equivalent PDF

    IR2410

    Abstract: 7 unit darlington array
    Text: 7-U nit 400m A Darlington Transistor Array IR2410 IR2410 7-Unit 400mA Darlington Transistor Array Pin C onnections Description T h e IR 2410 is a 7-circuit driver which is useful when designing circuits for printer calculators with display tubes. ■ Features


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    IR2410 400mA 16-pin IR2410 7 unit darlington array PDF

    M54410P

    Abstract: M54410
    Text: b3E • b 2 M S aS 7 Q D l ^ O l MITSUBISHI n j T3 241 M IT S U B IS H I BIPOLAR D IG ITA L ICs M54410P DGTL LOGIC KEY CONTROLLER FOR TAPE DECK DESCRIPTION PIN CONFIGURATION (TOP VIEW) The 54410P is a T T L integrated circuit semiconductor used for controlling the function keys on tape decks.


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    M54410P 54410P M54410P M54410 PDF

    Untitled

    Abstract: No abstract text available
    Text: CONIilELL CORP/ ANALOG SYS =131 ]> 2413^17 0DQ0224 T • JRC 7 ^ 7 7 ^ 7 ~ /0 MA-207 n r jn L O G Super Fast, Wideband Operational Amplifier SYSTEMS General Description MA-207 is a very wide bandwidth, high slew rate operational amplifier constructed with a bipolar mono­


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    0DQ0224 MA-207 MA-207 MA-207, 100MHz PDF

    T3D 77

    Abstract: Ultrasonic amplifier schematic circuit MA-207 MA-207-CP 0D005 power amplifers schematic 10ACL mA207
    Text: CONI i l ELL CORP/ ANALOG SYS T3 D T> 2413^17 00D0B24 T B J R C 7 ^ 7 7 ^ 7 V i? M A -2 07 n fM R L O G SYSTEMS Super Fast, W id e b an d O p e r a t io n a l Amplifie r G e n e ra l D es c rip tio n MA-207 is a very wide bandwidth, high slew rate operational amplifierconstructed with a bipolar mono­


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    00D0254 MA-207 200mA MA-207 MA-207, 100MHz T3D 77 Ultrasonic amplifier schematic circuit MA-207-CP 0D005 power amplifers schematic 10ACL mA207 PDF

    Untitled

    Abstract: No abstract text available
    Text: MSSI121/241/241B M O S E L V IT E L IC INSTANT VOICE ROM Features • Single power supply can operate at 2.4V through 6V. ■ Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. ■ The voice content is stored for 7-12 seconds for


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    MSSI121/241/241B SI121 SI241/241B MSM9159 MSM9159B MSSI121/241/241B PID224B PDF

    Untitled

    Abstract: No abstract text available
    Text: CONIdELL CORP/ ANALOG SYS S IE D 2413*117 0D00353 bSb B N R C -79-fc-H MA-207 Super Fast, Wideband Operational Amplifier r iN H L O G S Y S T E M S .G E N E R A L D E S C R IP T IO N ' D A TA SHEET FEATURES' 1.5GHz GAIN-BANDWIDTH PRODUCT ±800V / uS SLEW RATE


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    0D00353 -79-fc-H MA-207 200mA MA-207 PDF

    7363M

    Abstract: R2A3 LC7363 LC7363M 4INE SAA 1006
    Text: F SAÊ1YO i L C 7 3 6 3 , 7 3 6 3 M No.2413 CMOS LSI DTNF/PULSE S w i t c h a b l e D i a l e r "%j|f The LC7363.7363M are DTMF/OUTPUT-PüLSE dialer CMOS L§I|/wi|j|Jre<îi|à function for use in pushbutton telephones. The LC73&3 is packaged iljj'a 22-pin shrink


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    LC7363, 7363M LC7363 7363M 21-pin LC7363M 30-pin 3-58MHz) 31-diglt 2M13-9/9 R2A3 4INE SAA 1006 PDF

    Mextram

    Abstract: GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM
    Text: Paper 9.3 Experience with the New Com pact M E X T R A M M odel for Bipolar Transistors H.C. de GraafF, W.J. Kloosterman, J.A.M. Geelen and M.C.A.M. Koolen Philips Research Laboratories P.O. Box 80000 5600 JA Eindhoven, The Netherlands A bstract Here Qte and Qtc are the emitter and collector de­


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    ED-32, Mextram GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM PDF

    K 2411 equivalent

    Abstract: N2411
    Text: TOSHIBA TRANSISTOR SEMICONDUCTOR R N 2410, RN 2411 TnCUIDA • w w ■ II TECHNICAL DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (RN2410) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in Bias Resistors s Simplify Circuit Design


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    RN2410) RN1410, RN1411 RN2411 RN2410- RN2410, RN241Q N2410 K 2411 equivalent N2411 PDF

    VK200-20-4B

    Abstract: VK-200-20-4B MRF644 MRF644 MOTOROLA VK20020-4B 12J33
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —


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    16-Volt MRF644 VK200-20-4B VK-200-20-4B MRF644 MOTOROLA VK20020-4B 12J33 PDF

    TRANSISTOR noise figure measurements

    Abstract: transistor s parameters noise Mextram 138B noise diode Z Transistor diode ED32
    Text: IEEE 1990 Bipolar Circuits and Technology Meeting 10.1 THE INFLUENCE OF NON-IDEAL BASE CURRENT ON l / F NOISE BEHAVIOUR OF BIPOLAR TRANSISTORS M.C.A.M. Koolen and J.C.J. Aerts Philips Research Laboratories P.O. Box 80.000 5600 JA Eindhoven - The Netherlands


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    ED-32, TRANSISTOR noise figure measurements transistor s parameters noise Mextram 138B noise diode Z Transistor diode ED32 PDF