EQUIVALENT OF TRANSISTOR MJE13007 Search Results

EQUIVALENT OF TRANSISTOR MJE13007 Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A

EQUIVALENT OF TRANSISTOR MJE13007 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor mje13007 equivalent Abstract: mtp8p mje13007 equivalent Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V	Original	PDF	MJE13007 MJE13007 O-220 QW-R203-019 transistor mje13007 equivalent mtp8p mje13007 equivalent
transistor mje13007 equivalent Abstract: mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007 MJE13007-TA3-T MJE13007-TF3-T MPF930 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is	Original	PDF	MJE13007 O-220 MJE13007 O-220F MJE13007L MJE13007-TA3-T MJE13007L-TA3-T MJE13007-TF3-T MJE13007L-TF3-T transistor mje13007 equivalent mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007-TA3-T MJE13007-TF3-T MPF930
*e13007 Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007 Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V	Original	PDF	MJE13007 MJE13007 O-220 QW-R203-019 *e13007 bipolar transistor td tr ts tf equivalent of transistor mje13007
Untitled Abstract: No abstract text available Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V	Original	PDF	MJE13007 MJE13007 O-220F MJE13007L QW-R219-004
AN719 Abstract: transistor mje13007 equivalent on semiconductor AN719 AN569 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor Text: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching	Original	PDF	MJE13007 O-220 AN569 AN719 transistor mje13007 equivalent on semiconductor AN719 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor
transistor mje13007 equivalent Abstract: 1500 watts inverter diagrams mje13007 equivalent 221D AN719 AN873 AN875 MJE13007 MJF13007 MJE13007D Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching	Original	PDF	MJE13007/D MJE13007 MJF13007 MJE/MJF13007 MJE13007/D* transistor mje13007 equivalent 1500 watts inverter diagrams mje13007 equivalent 221D AN719 AN873 AN875 MJE13007 MJF13007 MJE13007D
transistor mje13007 equivalent Abstract: Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007 Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching	Original	PDF	MJE13007/D MJE13007 MJF13007 MJE/MJF13007 MJE13007/D* transistor mje13007 equivalent Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007
MJE130 Abstract: MJE13007G MJE13007G equivalent mtp8p MJE1300 MJE13007 transistor mje13007g Text: MJE13007G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as	Original	PDF	MJE13007G O-220 MJE13007/D MJE130 MJE13007G equivalent mtp8p MJE1300 MJE13007 transistor mje13007g
MJE13007G Abstract: No abstract text available Text: MJE13007G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as	Original	PDF	MJE13007G MJE13007G MJE13007/D
mje13007-1 Abstract: MJE130 mje13007 equivalent MJE13007 transistor mje13007 equivalent MJE130071 AN719 AN873 AN875 AN951 Text: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching	Original	PDF	MJE13007 MJE13007 r14525 MJE13007/D mje13007-1 MJE130 mje13007 equivalent transistor mje13007 equivalent MJE130071 AN719 AN873 AN875 AN951
MJE13007G Abstract: MJE13007G equivalent AN873 AN719 AN875 AN951 MJE13007 MPF930 MUR105 Text: MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as	Original	PDF	MJE13007G MJE13007G O-220 MJE13007/D MJE13007G equivalent AN873 AN719 AN875 AN951 MJE13007 MPF930 MUR105
mje13007-1 Abstract: MJE13007 transistor mje13007 equivalent mje13007 equivalent TRANSISTOR MJE13007-1 MJE130071 MJE13007D MJE13007-D AN719 MJE-13007 Text: ON Semiconductort MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching	Original	PDF	MJE13007 MJE13007 r14525 MJE13007/D mje13007-1 transistor mje13007 equivalent mje13007 equivalent TRANSISTOR MJE13007-1 MJE130071 MJE13007D MJE13007-D AN719 MJE-13007
MJE13007G Abstract: SUS CIRCUIT transistor mje13007 equivalent MJE13007 AN719 AN873 AN875 AN951 MPF930 MUR105 Text: MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as	Original	PDF	MJE13007 MJE13007 O-220 MJE13007/D MJE13007G SUS CIRCUIT transistor mje13007 equivalent AN719 AN873 AN875 AN951 MPF930 MUR105
MJE13007G Abstract: transistor mje13007g Text: MJE13007G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as	Original	PDF	MJE13007G O-220 MJE5850 MJE5852 MJE13007/D transistor mje13007g

S78DM12Q Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 Text: 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power	Original	PDF	SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
TRANSISTOR REPLACEMENT table for transistor Abstract: POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V	Original	PDF	MJE13007 MJF13007 MJE/MJF13007 MJF13007 Recogniz32 TIP73B TIP74 TIP74A TIP74B TIP75 TRANSISTOR REPLACEMENT table for transistor POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Untitled Abstract: No abstract text available Text: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated	Original	PDF	MJE5850, MJE5851, MJE5852 MJE5851 MJE13007G MJE5850/D
KF6N60 Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION	Original	PDF	USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
MB4213 Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors	Original	PDF	SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
2n3055 motorola Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,	Original	PDF	1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
mje 3007 Abstract: l3007 I3007 je13007 transistor mje13007 equivalent MJE 340 transistor MJE13007D bipolar power transistor vce 600 volt Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCH MODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching	OCR Scan	PDF	MJE13007/D JE13007 JF13007 MJE/MJF13007 221D-02 O-220 mje 3007 l3007 I3007 transistor mje13007 equivalent MJE 340 transistor MJE13007D bipolar power transistor vce 600 volt
e13009 Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	PDF	MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

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EQUIVALENT OF TRANSISTOR MJE13007 Search Results

EQUIVALENT OF TRANSISTOR MJE13007 Result Highlights (5)

EQUIVALENT OF TRANSISTOR MJE13007 Datasheets Context Search

transistor mje13007 equivalent

transistor mje13007 equivalent

*e13007

Untitled

AN719

transistor mje13007 equivalent

transistor mje13007 equivalent

MJE130

MJE13007G

mje13007-1

MJE13007G

mje13007-1

MJE13007G

MJE13007G

S78DM12Q

TRANSISTOR REPLACEMENT table for transistor

alternator diode 1776 B

Untitled

KF6N60

MB4213

2n3055 motorola

mje 3007

e13009

transistor f6 13003