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    EQUIVALENT MJE13005 Search Results

    EQUIVALENT MJE13005 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT MJE13005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU4508DX equivalent

    Abstract: ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent
    Text: Philips Semiconductors Power Bipolar Transistors Cross reference list ”PHILIPS TYPE” REFERS TO CLOSEST PHILIPS ALTERNATIVE OR DIRECT EQUIVALENT IF AVAILABLE. Always consider the application and compare data specifications before recommending suitable Philips type


    Original     		PDF 2SC4589 BU4525AF 2SC4692 BU4530AL 2SC4742 BU2508DW 2SC4743 BU4508AX 2SC4744 BU4508DF BU4508DX equivalent ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent

    XL1225 equivalent

    Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
    Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055


    Original     		PDF 2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent

    BT136-600E equivalent

    Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
    Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.


    Original     		PDF 10TQ045S 11DQ03 11DQ04 11EQ03 11EQ04 11EQS 15DF4 1N3645 BT136-600E equivalent D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent

    mje13005d equivalent

    Abstract: IC free MJE13005D IC free transistor hFE-100 low power
    Text: SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement.


    Original     		PDF MJE13005D 05RRENT mje13005d equivalent IC free MJE13005D IC free transistor hFE-100 low power

    mje13005df

    Abstract: IC free
    Text: SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A ・Built-in Free wheeling Diode makes efficient anti saturation operation. C P ・Low base drive requirement. B E SYMBOL RATING UNIT


    Original     		PDF MJE13005DF mje13005df IC free

    MJE13005D

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement.


    Original     		PDF MJE13005D MJE13005D

    mje13005d equivalent

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. A O C Suitable for half bridge light ballast Applications. F Low base drive requirement.


    Original     		PDF MJE13005D mje13005d equivalent

    MJE13005L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-Q QW-R221-027 MJE13005L

    MJE13005H

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-H QW-R221-024 MJE13005H

    equivalent mje13005

    Abstract: mje13005 MJE13005L
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 „ These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-126 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 mje13005 MJE13005L

    equivalent mje13005

    Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 MJE13005L-x-T60-K QW-R203-018 equivalent mje13005 Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-K QW-R203-045

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-K QW-R203-045

    2n2222 h parameter values

    Abstract: equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-126 O-263 O-220 O-220F QW-R203-018 2n2222 h parameter values equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  1 FEATURES TO-220F TO-251 1 1 TO-263 TO-252 APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits 


    Original     		PDF MJE13005 O-220F O-251 O-263 O-252 O-220 O-262 QW-R203-018.

    transistor mje13005 TO-126

    Abstract: to-126 transistor case
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 QW-R203-018. transistor mje13005 TO-126 to-126 transistor case

    equivalent mje13005

    Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 QW-R203-018 equivalent mje13005 2N2222 transistor output curve transistor mje13005 mje13005 equivalent

    equivalent mje13005

    Abstract: 1N4933 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 QW-R203-018 equivalent mje13005 1N4933 equivalent

    equivalent mje13005

    Abstract: 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220F QW-R219-001 equivalent mje13005 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve

    equivalent mje13005

    Abstract: circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 1 TO-220 TO-262  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 O-262 O-220F O-251 O-126 O-263 QW-R203-018.

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    JE1300

    Abstract: JE13005 mje130
    Text: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA M JE13005* D esigner’s Data Sheet ‘ M otorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs These de vices are de sig ne d fo r h ig h -v o lta g e , h ig h -s p e e d pow er sw itching


    OCR Scan     		PDF MJE13005/D JE13005* 21A-06 O-220AB JE1300 JE13005 mje130

    TYN 208 equivalent

    Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
    Text: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A


    OCR Scan     		PDF 1N2977 N2979 N2980 N2983 N2984 ZC2800E ZC2810E ZC2811E ZC5800E CQ202-4N-2 TYN 208 equivalent bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent