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    EQUIVALENT MJE13003 Search Results

    EQUIVALENT MJE13003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT MJE13003 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BU4508DX equivalent

    Abstract: ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent
    Text: Philips Semiconductors Power Bipolar Transistors Cross reference list ”PHILIPS TYPE” REFERS TO CLOSEST PHILIPS ALTERNATIVE OR DIRECT EQUIVALENT IF AVAILABLE. Always consider the application and compare data specifications before recommending suitable Philips type


    Original     		2SC4589 BU4525AF 2SC4692 BU4530AL 2SC4742 BU2508DW 2SC4743 BU4508AX 2SC4744 BU4508DF BU4508DX equivalent ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent PDF

    XL1225 equivalent

    Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
    Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055


    Original     		2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent PDF

    BT136-600E equivalent

    Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
    Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.


    Original     		10TQ045S 11DQ03 11DQ04 11EQ03 11EQ04 11EQS 15DF4 1N3645 BT136-600E equivalent D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent PDF

    2n2222 transistor pin b c e

    Abstract: DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003 290ns MJE13003L MJE13003G QW-R204-004 2n2222 transistor pin b c e DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l PDF

    mje13003 equivalent

    Abstract: MJE13003l MJE13003-x-TM3-T MJE13003 npn transistors 700V 1A switching transistor OF transistor 2N2222 to-92 2N2222 - to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003 290ns MJE13003L MJE13003-x-T60-K MJE13003L-x-T60-K QW-R204-004 mje13003 equivalent MJE13003l MJE13003-x-TM3-T MJE13003 npn transistors 700V 1A switching transistor OF transistor 2N2222 to-92 2N2222 - to-92 PDF

    equivalent mje13003

    Abstract: mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003 290ns MJE13003L MJE13003G MJE13003L-x-T60-A-K MJE13003L-x-T60-F-lues QW-R204-004 equivalent mje13003 mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92 PDF

    MJE13003K

    Abstract: Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003K 290ns MJE13003KL-x-x-T60-K MJE13003KG-x-x-T60-K MJE13003KL-x-x-T6C-A-K MJE13003KG-x-x-Tues QW-R223-006 MJE13003K Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V PDF

    mje13003

    Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-126 QW-R204-004 mje13003 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K QW-R223-009 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K QW-R223-009 PDF

    MJE13003 TO-92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 290ns MJE13003L QW-R201-062 MJE13003 TO-92 PDF

    mje13003 equivalent

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 mje13003 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 290ns O-126 MJE13003L QW-R204-004 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-126 QW-R204-004 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-at QW-R223-009 PDF

    MJE13003 transistor

    Abstract: equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 290ns O-126 MJE13003L MJE13003-x-T60-F-Kt QW-R204-004 MJE13003 transistor equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 PDF

    equivalent transistor 2N2905

    Abstract: UTCMJE13003 MJE13003 TO-92 mje13003 equivalent tti relay Ferroxcube core
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 equivalent transistor 2N2905 UTCMJE13003 MJE13003 TO-92 mje13003 equivalent tti relay Ferroxcube core PDF

    equivalent mje13003

    Abstract: mje13003 equivalent 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 OF transistor 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003 290ns MJE13003L-x-x-T60-K MJE13003G-x-x-T60-K O-126 MJE13003L-x-x-T6C-A-K QW-R204-004 equivalent mje13003 mje13003 equivalent 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 OF transistor 2N2222 PDF

    mje13003 equivalent

    Abstract: MJE13003 MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 TO-126 DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 O-126 290ns O-252 O-220 MJE13003L QW-R204-004 mje13003 equivalent MJE13003 MJE13003 TO-92 PDF

    equivalent mje13003

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 290ns O-252 MJE13003L O-252 MJE13003-x-Tues QW-R209-022 equivalent mje13003 PDF

    2N2222 transistor output curve

    Abstract: UTCMJE13003 MJE13003 transistor
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-220 QW-R203-017 2N2222 transistor output curve UTCMJE13003 MJE13003 transistor PDF

    MJE13003

    Abstract: MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 O-220 290ns MJE13003L MJE13003-x-TA3-F-T QW-R203-017 MJE13003 MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222 PDF