bpwb5
Abstract: CB41EL933 KIA6058S KIA6058AS KSC0902 soshin bpf KSFI604
Text: SEMICONDUCTOR TECHNICAL DATA KIA6058S/AS BIPOLAR LINEAR INTEGRATED CIRCUIT FM FRONT-END The KIA6058S/AS are designed for a FM front-end application, which are suitable to a portable radio or a radio cassette. Comparing with conventional types, supply voltage dependence, overload characteristics
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KIA6058S/AS
KIA6058S/AS
98MHz
bpwb5
CB41EL933
KIA6058S
KIA6058AS
KSC0902
soshin bpf
KSFI604
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KIA8182FN b ip o la r lin e a r in t e g r a t e d c ir c u it TV /FM SYSTEM FRONT END 1.5V USE The KIA8182FN is TV /FM Front End 1C, which is designed for 1.5V headphone radio. FEATURES • Built-in VHF/FM band front end. FM Mode : 75~109MHz
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KIA8182FN
KIA8182FN
109MHz
225MHz
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN4901 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4901 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 2 . 1± 0.1 ± 0 . 1. 1.25 • Including Two Devices in US6 (Ultra Super Mini Type with 6
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RN4901
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TD62476-479P TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62476P, TD62477P, TD62478P, TD62479P 2CH PERIPHERAL AND / NAND I OR / NOR DRIVERS The TD62476P, TD62477P, TD62478P, TD62479P are comprised of two NPN single output stages and control
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TD62476-479P
TD62476P,
TD62477P,
TD62478P,
TD62479P
TD62479P
350mA
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equivalent fa 5515
Abstract: SE194D SE17XC01S SE099E01S
Text: CROSS-REFERENCE LIST- m ilitary M IL IT A R Y z PART NUM BER S rV IS 171 21 1 • w |_M 5515 5 /2 9 - 1 CAM BION M IL IT A R Y PART NUMBER PART NUMBER o *-* o Z « « standard m s /m « O CAM BION 160 - 2 0 8 5 160 7552 11 - 0 3 - 0 0 11 - 0 5 - 0 0 ["M S I 7 1 2 2 14
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S17121
M5515
equivalent fa 5515
SE194D
SE17XC01S
SE099E01S
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TA8600N
Abstract: trf-1027 trf-1028 trf1027
Text: TOSHIBA TA8600N PIF AND QUASI-PARRALEL SIF COMBINATION Unit: mm The TA8600N is designed for providing a high performance PIF-SIF combination for a TV and CATV. The SIF section adopts quasi-parralel inter-carrier detection system for a good sound reproduction.
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TA8600N
TA8600N
400Hz
25kHz
100tnVrnis
400Hz,
100dB
trf-1027
trf-1028
trf1027
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bpwb5
Abstract: 10.7MHZ COIL 5764 Soshin Electric bpwb5 CB41EL933 Soshin Electric Co capacitor Soshin Electric sumida IFT 10.7MHz soshin bpf KSC0902 sumida ift 5764 coil
Text: SEMICONDUCTOR TECHNICAL DATA KIA6058F BIPOLAR LINEAR INTEGRATED CIRCUIT FM FRONT-END The KIA6058F is designed for a FM front-end application, which is suitable to a portable radio or a radio cassette. Comparing with conventional types, supply voltage dependence, overload characteristics and spurious
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KIA6058F
KIA6058F
100MHz
12mm0
KSFI604
KSC0902
44M-933A
CB41EL933
bpwb5
10.7MHZ COIL 5764
Soshin Electric bpwb5
CB41EL933
Soshin Electric Co capacitor
Soshin Electric
sumida IFT 10.7MHz
soshin bpf
KSC0902
sumida ift 5764 coil
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB1555 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR i <; r 1 *5 <5 <5 O POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : V q e q = —140V (Min.) • Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 2 5°C)
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2SB1555
--140V
2SD2384
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Untitled
Abstract: No abstract text available
Text: RN1010,1011 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN2010, RN2011 EQUIVALENT CIRCUIT
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RN1010
RN2010,
RN2011
RN1011
RN1010
RN1011
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2SD1294
Abstract: AC73
Text: TOSHIBA 2SD1294 2 S D 1 294 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER REGULATOR FOR LINE OPERATED TV. • • • • , 2.0 1 5 .9 M A X . . Excellent Wide Safe Operating Area 80 W-s at Tc = 25°C Included Avalanche Diode : Vz = 60±15V
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2SD1294
2SD1294
AC73
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TD62107P/BP/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT T• n f i ? 1 f l 7m mP g SILICON MONOLITHIC T» r * f i 7 1■ IMT f l 7m R P mm ■ g Tm n f i 7 i ■n^ur7m Fm 4CH HIGH-CURRENT DARLINGTON SINK DRIVER The TD62107P/BP/F are high-voltage, high-current
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TD62107P/BP/F
TD62107P/BP/F
TD62107P/
750mA
TD62107BP)
TD62107P)
TD62107F)
DIP16-P-300-2
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47s00
Abstract: No abstract text available
Text: TO SHIBA TD62107P/BP/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT T• n f i ? 1 f l 7m mP g SILICON MONOLITHIC T» r * f i 7 1■ IMT f l 7m R P mm ■ g Tm n f i 7 i ■n^ur7m Fm 4CH HIGH-CURRENT DARLINGTON SINK DRIVER The TD62107P/BP/F are high-voltage, high-current
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TD62107P/BP/F
TD62107P/BP/F
TD62107P/
750mA
TD62107BP)
TD62107P)
TD62107F)
DIP16-P-300-2
47s00
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 149 5 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • 10 +0.3 High DC Current Gain : hFE = 2000 Min. (VCe = -2 V , IC = -2 A ) Low Saturation Voltage : VCE( s a t ) =— (MAX.) (IC = -1.5A )
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2SB1495
2SD2257
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ICP35
Abstract: horizontal output transistor
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2095 COLOR TV HORIZONTAL OUTPUT TRANSISTOR Unit in . High Voltage : V q b q =1500V 1 5 .5 ± Q .5 r i 1.2.1 . High Speed 26-5±0.5 1 001 " oJ<y 'o : VcE sat =5V(Max.) (Ic=3.5A, Ib =0.8A) : tf=l.Ojis(Max.) (IcP=3.5A, Ib I(end)=0.8A)
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2SD2095
ICP35
horizontal output transistor
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Untitled
Abstract: No abstract text available
Text: 2SD2130 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 8.3MAX. 5.8 POWER AMPLIFIER APPLICATIONS. 0 3.1 ± 0 .1 . High DC Current Gain : hpE=2000(Min.)(VCE=2V, Ic=lA) 3:. Low Saturation Voltage
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2SD2130
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4602 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 - 0 . 3 + 0.2 1 . 6 - 0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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RN4602
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA8246H TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8246H DUAL AUDIO PO W ER AMPLIFIER 6W x2C H The TA8246H is dual power amplifier for Consumer applications. This 1C provides an output power of 6 watts per channel at V Cc = 20V, f = 1kHz, THD = 10%, R l = 8 il
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TA8246H
TA8246H
HZIP12-P-1
075TYP
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN5006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN5006 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 4.6MAX. 1.7 MAX. POWER SWITCHING APPLICATIONS. — With Built-in Bias Resistors Simplify Circuit Design
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RN5006
RN6006
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2SC4895
Abstract: A13F
Text: h ÿ > v 7* $ / I ransistors 9 C C 4 8 Q 5 2SC4895 it ;^ ^ '> 7 ^ U - t lN P N v U 3 > h 7 > y X ^ ^ - U > h > ii Epitaxial Planar NPN Silicon Transistor (Darlington) 1£J§)j£iI2j*ilillffl/Low Freq. Power Amp. • £W2\f'>ilSI/Dimensions (Unit : mm) 1)
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2SC4895
2SC4895
A13F
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g 6551
Abstract: m6551 HM 1211 6551 HM-6551 HM-6551-5 HM-6551-9
Text: H M -6 5 5 1 O HARRIS 2 5 6 x 4 CMOS RAM Features • • • • • • • • • • • • L o w S ta n d b y P o w e r . 5 0 ^ W M ax. L o w O p e ra tin g P o w e r . 2 0 m W /M H z M ax.
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HM-6551
20mW/MHz
220ns
HM-6551-5
HM-6551
HM-6551-8
g 6551
m6551
HM 1211
6551
HM-6551-5
HM-6551-9
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TA8069F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8069 F 4CH LOW SIDE DRIVER TA8069F is built into four Q.5A low-side driver ICs which drive lamp, relay, and solenoid actuators. Inputs from Dll, DI2, DI3, and DI4 switch ON and OFF modes. Inputs
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TA8069F
TA8069
TA8069F
HSOP20-P-450-1
HSOP12-P-450-1
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TA8115F
Abstract: HI 17741 TA8115N Q1/toshiba headphone amplifier 7721AN
Text: T -, oshiba electronic deJ ds tdtvsm 9097247 TOSHIBA. ELECTRONIC ? | o 0 2E 17739 D T-7 7-2.I ITA8115N/F TENTATIVE DUAL PRE-AMPLIFIERS + HEADPHONE DRIVERS FOR AUTOREVERSE SYSTEM IC 3V USE The TA8115N/F are developed for auto reverse play back headphone cassette play (3V use).
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177Bc1
A8115N/F
TA8115N/F
0D177S1
TA8115N/F
T-77-21
-10dBm
TA8115F
HI 17741
TA8115N
Q1/toshiba headphone amplifier
7721AN
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2S D2079 HIGH POWER SWITCHING APPLICATIONS. U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. • 10 + 0.3 , ^ 3 .2 + 0.Z Z .7 ± 0 2 High DC C urrent Gain * V iT vm ’
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2SD2079
D2079
2SB1381.
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Untitled
Abstract: No abstract text available
Text: TA76431 AS T O SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T• A 7 m m a f i Ä ? 1 SILICON MONOLITHIC A m < m ;r « ADJUSTABLE PRECISION SHUNT REGULATOR FEATURES • Precision Reference Voltage V r e f = 2.495 V ± 1% • Small Temperature Coefficient
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TA76431
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