EQUIVALENT DIODE FOR 1SS41 Search Results

1SS412

Contextual Info: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications Low forward voltage : VF = 1.0 V typ. Low reverse current : IR = 0.1 nA (typ.) Small total capacitance : CT = 3.0 pF (typ.) Small package : SC-70 Unit: imm Maximum Ratings (Ta = 25°C)

1SS413

Abstract: 030619EAA
Contextual Info: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5µA max : CT = 3.9pF (typ.) 0.07 M A Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating

1SS419

Contextual Info: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 µA (max) CATHODE MARK • Unit: mm Maximum Ratings (Ta = 25°C)

1SS418

Contextual Info: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF 3 = 0.23V (typ.)@ IF = 5mA CATHODE MARK • Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage

1SS412

Contextual Info: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications z Low forward voltage : VF = 1.0 V typ. z Low reverse current : IR = 0.1 nA (typ.) z Small total capacitance : CT = 3.0 pF (typ.) z Small package : SC-70 Unit: imm

1SS416

Contextual Info: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 A Characteristic Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200

1SS413

Abstract: 11-L1 1-1L1A
Contextual Info: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) 0.07 M A Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 25 V Reverse voltage

1SS419

Contextual Info: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C)

1SS418

Contextual Info: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF 3 = 0.23V (typ.)@ IF = 5mA CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

1SS417

Contextual Info: 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum peak forward current IFM 200 mA Average forward current IO

1SS416

Contextual Info: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 Symbol Rating Unit 0.07 M A Maximum peak reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200 mA Average forward current

Contextual Info: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage CATHODE MARK • Unit: mm : VF 3 = 0.23V (typ.)@ IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

1SS412

Contextual Info: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications z Low forward voltage : VF = 1.0 V typ. z Low reverse current : IR = 0.1 nA (typ.) z Small total capacitance : CT = 3.0 pF (typ.) z Small package : SC-70 Unit: imm

1SS413

Contextual Info: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic 0.07 M A 1.0±0.05 Low reverse current Small total capacitance

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

1SS417CT

Contextual Info: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200

Contextual Info: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200

Contextual Info: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C)

1SS417

Contextual Info: 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum peak forward current IFM 200 mA Average forward current IO

Contextual Info: 1SS416TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416TS High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.24V typ. @IF = 5mA 0.6±0.05 Reverse voltage VRM 35 V VR 30 V Maximum (peak) forward current IFM

Contextual Info: 1SS417TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417TS High Speed Switching Application • Unit: mm Small package Low forward voltage: VF 3 = 0.56V (typ.) Low reverse current: IR = 5 A (Max.) 0.6±0.05 A Symbol Rating Unit VRM 45 V Reverse voltage

1SS416

Contextual Info: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 Symbol Rating Unit 0.07 M A Maximum peak reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200 mA Average forward current

1SS416CT

Contextual Info: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200

DIODE S4 29

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