EQUIVALENT 2N5462 Search Results

2n5461

Abstract: 2n5462 equivalent 2N5462 2N5460
Contextual Info: ON Semiconductort 2 DRAIN JFET Amplifiers 2N5460 2N5461 2N5462 3 GATE P–Channel — Depletion 1 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain–Gate Voltage Rating VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc Forward Gate Current IG f 10 mAdc Total Device Dissipation @ TA = 25°C

2N5460

Abstract: 2n5462 2N5461 2N5461 equivalent 2N54XX equivalent 2N5462 marking JW
Contextual Info: 2N5460, 2N5461, 2N5462 JFET Amplifier P−Channel − Depletion Features • Pb−Free Packages are Available* http://onsemi.com 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

P-Channel JFETs

Abstract: sst5460 SST5461
Contextual Info: 2N/SST5460 Series VISHAY T Vishay Sil icon ix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number V G S o ff ( V ) V (B R )G S S M i n ( V ) 2 N /S S T 5 4 6 0 0 .7 5 to 6 40 1 -1 2 N /S S T 5 4 6 1 1 to 7.5 40 1.5 -2

2N5460

Abstract: 2N5460 MOTOROLA 2N5461 MOTOROLA 2N5462
Contextual Info: MOTOROLA Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA J F E T A m p lifiers P-Channel — Depletion 2N5460 thru 2N5462 2 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc Forward Gate Current 'G f 10

2N5460

Abstract: 2N5461 2N5462
Contextual Info: 2N5460/5461/5462 Siliconix PĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N5460 0.75 to 6 40 1 -1 2N5461 1 to 7.5 40 1.5 -2 2N5462 1.8 to 9 40 2 -4 Features Benefits Applications D High Input Impedance

"P-Channel JFETs"

Abstract: transistor 2N5461 2N5460 5461 Siliconix P-Channel JFETs 2N5461 2N5462
Contextual Info: 2N5460/5461/5462 P-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N5460 0.75 to 6 2N5461 1 to 7.5 40 1 –1 40 1.5 2N5462 1.8 to 9 –2 40 2 –4 Features Benefits Applications D High Input Impedance D Very Low Noise

SST5461

Abstract: 2N5460 2n5462 2N5461 SST5460 SST5462 70262
Contextual Info: 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9

SST5461

Abstract: 2N5460 2n5462 2N5461 SST5460 SST5462
Contextual Info: 2N/SST5460 Series P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9 –2 40 2 –4

2N5460

Abstract: 2N5461 2N5462 SST5460 SST5461 SST5462
Contextual Info: 2N/SST5460 Series P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9 –2 40 2 –4

2N5460

Abstract: 2N5461 2N5462 jfet 2N5461 transistor transistor 2N5461 2N5461 equivalent
Contextual Info: ON Semiconductort 2 DRAIN JFET Amplifiers 2N5460 2N5461 2N5462 3 GATE P–Channel — Depletion 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C

2N5462

Abstract: 2N5460 2n5461 transistor 2N5461 equivalent 2N5462
Contextual Info: ON Semiconductort 2N5460 2N5461 2N5462 2 DRAIN JFET Amplifiers P–Channel — Depletion 3 GATE 1 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain–Gate Voltage Rating VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc Forward Gate Current IG f 10 mAdc Total Device Dissipation @ TA = 25°C

2N5461 MOTOROLA

Abstract: 2N5460 MOTOROLA 2N5460 2n5462 2N5461
Contextual Info: MOTOROLA Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 thru 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc

2N54XX

Abstract: 2N5461RLRA 2N5462 2N5461 2N5460 2N5460G 2N5460 equivalent
Contextual Info: 2N5460, 2N5461, 2N5462 JFET Amplifier P−Channel − Depletion Features • Pb−Free Packages are Available* http://onsemi.com 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain − Gate Voltage VDG 40 Vdc Reverse Gate − Source Voltage VGSR 40 Vdc

2N5462

Abstract: 2N5460 2N5461 2N5461G 2N5460G 2N5461RLRA 2N5461RLRAG 2N5462G
Contextual Info: 2N5460, 2N5461, 2N5462 JFET Amplifier P−Channel − Depletion Features • Pb−Free Packages are Available* http://onsemi.com 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain − Gate Voltage VDG 40 Vdc Reverse Gate − Source Voltage VGSR 40 Vdc

SST5461

Abstract: "P-Channel JFETs" 2N5460 2n5462 2N5461 SST5460 SST5462 2n EQUIVALENT
Contextual Info: 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9

2N5461

Abstract: 2N5462 2N5460
Contextual Info: ON Semiconductort 2N5460 2N5461 2N5462 JFET Amplifiers P–Channel — Depletion MAXIMUM RATINGS Symbol Value Unit Drain–Gate Voltage Rating VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc Forward Gate Current IG f 10 mAdc Total Device Dissipation @ TA = 25°C

2N5460

Abstract: 2n5462 2N5461 transistor 2N5461 SMP5460 SMP5461 SMP5462
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-21 B-21 01/99 2N5460, 2N5461, 2N5462 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage

2N5465

Abstract: 2N5460 2N5460-2N5465 SST5461
Contextual Info: P-Channel JFET Low Noise Amplifier C Q IO Q IC CORPORATION 2N5460- 2N5465/ SST5460- SST5465 ABSOLUTE MAXIMUM RATINGS T a =• 25°C unless otherwise specified PIN CONFIGURATION * Drain-Gate or Source-Gate Voltage 2N5460 - 2N5462 .-40V

Contextual Info: B 21 9 -9 7 2N5460, 2N 5461, 2N5462 P-CH AN N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • GENERAL PURPOSE AMPLIFIERS Absolute maximum ratings at 25CC Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

SST5461

Contextual Info: calocflc P-Channel JFET Low Noise Amplifier CORPORATION \ J 2N5460- 2N54B5/SST5460 SST5465 - ABSO LUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified PIN CONFIGURATION Drain-Gate or Source-Gate Voltage 2N5460 - 2N5462 .-40V

2N5460-2N5465

Abstract: 2N5463 5503d 2N5465 SST5465 S02 SOT-23 MARKING 2N5464 5465 SST5461 SST5460
Contextual Info: P-Channel JFET Low Noise Amplifier calotfic CORPORATION \J 2N5460- 2N5465/SST5460 SST5465 - ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified PIN CONFIGURATION Drairt-Gate or Sourca-Gate Voltage 2N5460 - 2N5462 . -40V

2N5462

Abstract: 2N5460
Contextual Info: MICDNDUCTQ R tm MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 ' S Mark: 6 E /6 1 U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

MMBF5460

Contextual Info: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general

2N5482

Abstract: 2N5461 2N5480 2ns460 2N5460 2N5462 MOTOROLA 2N
Contextual Info: 2N5460 thru 2N5462* CASE 29-04, STYLE 7 TO-92 TO-226AA M A X I M U M R A T IN G S Rating Sym bol Value U nit VdG 40 Vdc V g SR 40 Vdc Drain-Gate Voltage Reverse Gate-Source Voltage 3 'Gift 10 m Adc Total Device Dissipation @ T a - 25°C Derate above 25°C