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    EPC2801 Search Results

    EPC2801 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPC2801 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 25A BUMPED DIE Original PDF

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    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2801 EPC2801 – Enhancement Mode Power Transistor PRELIMINARY VDSS , 100 V RDS ON , 7 mW ID , 25 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2801 PDF