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    EPC2012 Price and Stock

    Efficient Power Conversion EPC2012C

    GANFET N-CH 200V 5A DIE OUTLINE
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    DigiKey EPC2012C Digi-Reel 16,864 1
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    EPC2012C Cut Tape 16,864 1
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    EPC2012C Reel 15,000 2,500
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    Efficient Power Conversion EPC2012

    GANFET N-CH 200V 3A DIE
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    TAIYO YUDEN LLEPC2012KKTR47M

    FIXED IND 0.47 UH 4.2A 0.03 OHM
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    DigiKey LLEPC2012KKTR47M Reel 3,000
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    Avnet Americas LLEPC2012KKTR47M Reel 7 Weeks 3,000
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    TAIYO YUDEN LSEPC2012KKTR47M

    FIXED IND 0.47 UH 4.2A 0.03 OHM
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    DigiKey LSEPC2012KKTR47M Reel 3,000
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    Avnet Americas LSEPC2012KKTR47M Reel 7 Weeks 3,000
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    Mouser Electronics LSEPC2012KKTR47M
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    TAIYO YUDEN LSEPC2012HKTR47M

    Power Inductors - SMD .47 UH 20%
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    Mouser Electronics LSEPC2012HKTR47M
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    Newark LSEPC2012HKTR47M Reel 3,000 3,000
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    EPC2012 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPC2012 Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 200V 3A BUMPED DIE Original PDF
    EPC2012C EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 200V 5A BUMPED DIE Original PDF

    EPC2012 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: eGaN FET DATASHEET EPC2012 EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: EPC2012 eGaN FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure


    Original     		EPC2012 Drain-to-Source409 PDF

    s11 hall magnetic sensor

    Abstract: No abstract text available
    Text: WHITE PAPER: WP016 eGaN FET Small Signal RF Performance eGaN® FET Small Signal RF Performance EFFICIENT POWER CONVERSION Michael de Rooij, Ph.D., Executive Director of Applications Engineering and Johan Strydom, Ph.D., V.P., Applications, Efficient Power Conversion Corporation


    Original     		WP016 EPC2012 EPC2012 s11 hall magnetic sensor PDF

    EPC8004

    Abstract: No abstract text available
    Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been


    Original     		AN015 EPC8000 ATS-54150K-C2-R0 EPC8004 PDF

    Untitled

    Abstract: No abstract text available
    Text: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,


    Original     		WP014 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 2 4 3 5 6 A A 7 - 12 Vdc J1 1 2 CON2 D3 BAV21 C10 1uF, 25V TP2 Keystone 5015 PWM1 1 2 CON2 J9 2 R1 10k 1 2 3 CON2 A B GND VDD 5 Y 1 C1 1uF, 25V C2 1uF, 25V 5 C11 1uF, 25V C12 0.22uF, 25V U6 U2 6 C6 100p VDD REG C8 0.22uF, 25V VREF 2 150V Max R11 Q1 BAS40LP


    Original     		BAV21 BAS40LP EPC2012 NC7SZ00L6X UCC27611 SS8410BB SDM03U40 PDF

    Si8410BB

    Abstract: No abstract text available
    Text: Figure 4: Waveforms for VIN = 150 V to 5 V/2 A 100kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9004 development board does not have any current or thermal protection on board.


    Original     		100kHz) EPC9004 EPC1012 Si8410BB PDF

    EPC TRANSFORMER

    Abstract: EPC-12-100 EPC56 transformer 230V to 12V 500mA EPC-10-90 EPC40 EPC-120-200 EPC1012 EPC-34 epcd
    Text: EPC SERIES Miniature Plug in Power Transformers STYLE B STYLE C STYLE D STYLE E Mechanical Dimensions: EPC SERIES UNIT:mm 140 EPC SERIES Miniature Plug in Power Transformers œ PRIMARY 50/60Hz Power transformer-concentric or split winding construction Single 115V


    Original     		50/60Hz 115/230V EPC-10-90 EPCD-10-90 180mA EPC-10-120 EPCD-10-120 120mA 240mA EPC-10-440 EPC TRANSFORMER EPC-12-100 EPC56 transformer 230V to 12V 500mA EPC-10-90 EPC40 EPC-120-200 EPC1012 EPC-34 epcd PDF