uster
Abstract: 1001-7R 140 Watt 110 Vdc square wave generator 2660-7R
Text: P Series Extended Data Sheet 100 - 195 Watt DC-DC Converters Input to output isolation 1, 2, 3 or 4 outputs Many combinations of the following output voltages are available: 3.3 V, 5.1 V, 12 V, 15 V and 24 V. Class I equipment • Extremely high efficiency
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89/336/EEC
uster
1001-7R
140 Watt 110 Vdc square wave generator
2660-7R
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EP-603 power supply
Abstract: EP-613 power supply EP-613 EP 603 TR 505 tr 611 TR 610 tr 614 VS-507 EP-613 DC POWER SUPPLY
Text: Digital Deflection Controller SDA 9064-5 Preliminary Data NMOS IC Features ● Pipeline processor structure controls deflection stages ● Raster alignment by keyboard or automatically ● Adaptable beam current compensation for picture height and width ● Protection input stops the exceeding
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100-/120-Hz
P-DIP-40-1
Q67100-H8382
EP-603 power supply
EP-613 power supply
EP-613
EP 603
TR 505
tr 611
TR 610
tr 614
VS-507
EP-613 DC POWER SUPPLY
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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Untitled
Abstract: No abstract text available
Text: 19-0657; Rev 6; 3/12 KIT ATION EVALU LE B A IL A AV Automotive Micropower Linear Regulators with Supervisor ♦ ♦ ♦ ♦ ♦ ♦ ♦ Ordering Information TEMP RANGE PART -40°C to +125°C 6 TDFN-EP* MAX6765TT_D_/V+ -40°C to +125°C 6 TDFN-EP* Ordering Information continued at end of data sheet.
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MAX6765TT
MAX6765TTLD4
200ms
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MAX15006BASA
Abstract: MAX15006BATT MAX15007 T633-2
Text: 19-0663; Rev 0; 10/06 40V, Ultra-Low Quiescent-Current Linear Regulators in 6-Pin TDFN/8-Pin SO The MAX15006/MAX15007 ultra-low quiescent-current linear regulators are ideal for use in automotive and battery-operated systems. These devices operate from an input voltage of 4V to 40V, deliver up to 50mA of output current, and consume only 10µA of quiescent current at no load. The internal p-channel pass device
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MAX15006/MAX15007
MAX15007
MAX15006A/MAX15007A
MAX15006B/MAX15007B
protect150"
MAX15006/MAX15007
MAX15006BASA
MAX15006BATT
T633-2
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IC 290 8pin
Abstract: max15006batt 8-pin soic pcb footprint
Text: 19-0663; Rev 0; 10/06 40V, Ultra-Low Quiescent-Current Linear Regulators in 6-Pin TDFN/8-Pin SO The MAX15006/MAX15007 ultra-low quiescent-current linear regulators are ideal for use in automotive and battery-operated systems. These devices operate from an input voltage of 4V to 40V, deliver up to 50mA of output current, and consume only 10µA of quiescent current at no load. The internal p-channel pass device
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MAX15006/MAX15007
MAX15007
MAX15006A/MAX15007A
MAX15006B/MAX15007B
IC 290 8pin
max15006batt
8-pin soic pcb footprint
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AAT2430
Abstract: No abstract text available
Text: DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2491 is a monolithically integrated dual N-channel high-voltage cascode-clamp lateral TrenchDMOS array. The dual-channel AAT2491 monolithically integrates
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AAT2491
AAT2491
24side
01934A
AAT2430
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vtc 365
Abstract: MAX3286 MAX3287 MAX3289 MAX3296 MAX3299 vmd 185 020 at
Text: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.
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25Gbps/2
MAX3286CTI+
MAX3286CGI
MAX3286CHJ
G2855-1
T2855-7
MAX3286/MAX3296
vtc 365
MAX3286
MAX3287
MAX3289
MAX3296
MAX3299
vmd 185 020 at
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MAX3286
Abstract: MAX3287 MAX3289 MAX3296 MAX3299
Text: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.
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25Gbps/2
MAX3286CTI+
MAX3286CGI
MAX3286CHJ
G2855-1
T2855-7
MAX3286/MAX3296
MAX3286
MAX3287
MAX3289
MAX3296
MAX3299
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max6627mka#tg16
Abstract: 2N3904 CMPT3904 MAX6627 MAX6628 MMBT3904 TG16 MAX6627MKA digital UPS circuit diagram
Text: 19-2032; Rev 5; 6/11 Remote ±1°C Accurate Digital Temperature Sensors with SPI-Compatible Serial Interface Features The MAX6627/MAX6628 precise digital temperature sensors report the temperature of a remote sensor. The remote sensor is a diode-connected transistor, typically
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MAX6627/MAX6628
2N3904
MAX6627/MAX6628
max6627mka#tg16
CMPT3904
MAX6627
MAX6628
MMBT3904
TG16
MAX6627MKA
digital UPS circuit diagram
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Untitled
Abstract: No abstract text available
Text: 19-2032; Rev 5; 6/11 Remote ±1°C Accurate Digital Temperature Sensors with SPI-Compatible Serial Interface Features The MAX6627/MAX6628 precise digital temperature sensors report the temperature of a remote sensor. The remote sensor is a diode-connected transistor, typically
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MAX6627/MAX6628
2N3904
MAX6627/MAX6628
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T491C
Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235
Text: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19030EF
Hz--1990
AGR19030EF
DS04-224RFPP
DS04-158RFPP)
T491C
AGR19030XF
100B100JCA500X
JESD22-C101A
j598
SEMICONDUCTOR J598
W1235
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AGR19030XF
Abstract: 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A
Text: Preliminary Data Sheet March 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19030E
Hz--1990
AGR19030E
DS04-076RFPP
PB04-013RFPP)
AGR19030XF
100B100JCA500X
AGR19030EF
AGR19030EU
JESD22-C101A
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THERMISTORS SCK
Abstract: No abstract text available
Text: MAX6627/MAX6628 Remote ±1ºC Accurate Digital Temperature Sensors with SPI-Compatible Serial Interface General Description The MAX6627/MAX6628 precise digital temperature sensors report the temperature of a remote sensor. The remote sensor is a diode-connected transistor, typically
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MAX6627/MAX6628
MAX6627/MAX6628
2N3904
THERMISTORS SCK
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j561
Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680
Text: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19030E
Hz--1990
AGR19030E
DS04-158RFPP
DS04-076RFPP)
j561
T491C
AGR19030XF
100B100JCA500X
AGR19030EF
AGR19030EU
JESD22-C101A
100B100
DSA0020680
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transistor 7350
Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
Text: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19060E
Hz--1990
AGR19060E
DS04-078RFPP
DS01-216RFPP)
transistor 7350
100B100JCA500X
AGR19060EF
AGR19060EU
JESD22-C101A
transistor z14 L
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b93 02 diode
Abstract: 02 b93 diode ABG TRANSISTOR ACB SOT23-6 MAXIM AMP DIODE B93 DUAL NPN SOT23-6 MAX6471 MAX6474 MAX6477 MAX6479
Text: 19-2532; Rev 6; 2/11 KIT ATION EVALU E L B AVAILA 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit The MAX6469–MAX6484 are low-dropout linear regulators with a fully integrated microprocessor reset circuit. Each is available with preset output voltages from +1.5V
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300mA
MAX6469
MAX6484
100mV
300mA
MAX6471/MAX6472/MAX6479/MAX6480
b93 02 diode
02 b93 diode
ABG TRANSISTOR
ACB SOT23-6 MAXIM AMP
DIODE B93
DUAL NPN SOT23-6
MAX6471
MAX6474
MAX6477
MAX6479
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Untitled
Abstract: No abstract text available
Text: 19-2532; Rev 6; 2/11 KIT ATION EVALU E L B AVAILA 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit Features The MAX6469–MAX6484 are low-dropout linear regulators with a fully integrated microprocessor reset circuit. Each is available with preset output voltages from +1.5V
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300mA
MAX6469â
MAX6484
100mV
300mA
MAX6471/MAX6472/MAX6479/MAX6480
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AGR19045XF
Abstract: No abstract text available
Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19045EF
Hz--1990
AGR19045XF
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vmd 185 020 at
Abstract: MAX3286CTI T
Text: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.
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25Gbps/2
MAX3286/MAX3296
780nm
850nm)
1300nm)
H32-2F*
21-0110B
MAX3286C
vmd 185 020 at
MAX3286CTI T
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DUAL NPN SOT23-6
Abstract: MAX6469 MAX6471 MAX6474 MAX6476 MAX6477 MAX6479 MAX6482 MAX6484
Text: 19-2532; Rev 5; 12/07 KIT ATION EVALU LE B A IL A AV 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit Features The MAX6469–MAX6484 are low-dropout linear regulators with a fully integrated microprocessor reset circuit. Each is available with preset output voltages from +1.5V
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300mA
MAX6469
MAX6484
100mV
300mA
DUAL NPN SOT23-6
MAX6471
MAX6474
MAX6476
MAX6477
MAX6479
MAX6482
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transistor 7350
Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR19060E
Hz--1990
AGR19060E
DS04-159RFPP
DS04-078RFPP)
transistor 7350
agere c8 c1
transistor 7350 A
100B100JCA500X
AGR19060EF
AGR19060EU
JESD22-C101A
j496
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MB2141A
Abstract: MB89P485 MB90370 MBM27C256A X03427 t21c
Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM25-10151-2E F2MC-8L 8-BIT MICROCONTROLLER MB89480/480L Series HARDWARE MANUAL F2MC-8L 8-BIT MICROCONTROLLER MB89480/480L Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.
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CM25-10151-2E
MB89480/480L
MB2141A
MB89P485
MB90370
MBM27C256A
X03427
t21c
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6603 Shenzhen
Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19045E
Hz--1990
AGR19045E
DS04-077RFPP
DS02-378RFPP)
6603 Shenzhen
AGR19045EF
AGR19045EU
CDR33BX104AKWS
JESD22-C101A
transistor J600
J600 transistor
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