ic s79 pin configuration diagram
Abstract: SC53 S6B0086 S6B2104 SC32 SC33 SC34 SC35 SC36 7 segment display 30 pin configuration clock
Text: 80CH SEGMENT DRIVER FOR DOT MATRIX LCD S6B2104 INTRODUCTION The S6B2104 is a LCD driver IC, which is fabricated by low power CMOS high voltage process technology. This device consists of 80-bit bi-directional shift register, 80-bit data latch and 80 bit driver.
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S6B2104
S6B2104
80-bit
S6B0086
S6B2104'
ic s79 pin configuration diagram
SC53
S6B0086
SC32
SC33
SC34
SC35
SC36
7 segment display 30 pin configuration clock
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Intel 82430
Abstract: IDT70825
Text: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random
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IDT70825S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
Intel 82430
IDT70825
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verilog code for huffman coding
Abstract: XAPP616 huffman code book in verilog huffman encoding and decoding using VHDL verilog for 8 point dct in xilinx LOWER16 vhdl code for huffman decoding iso 13818-2 VHDL code DCT dct verilog code compress jpeg
Text: Application Note: Virtex Series R Huffman Coding Author: Latha Pillai XAPP616 v1.0 April 22, 2003 Summary Huffman coding is used to code values statistically according to their probability of occurence. Short code words are assigned to highly probable values and long code words to less probable
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XAPP616
verilog code for huffman coding
XAPP616
huffman code book in verilog
huffman encoding and decoding using VHDL
verilog for 8 point dct in xilinx
LOWER16
vhdl code for huffman decoding
iso 13818-2
VHDL code DCT
dct verilog code compress jpeg
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IDT70825
Abstract: IDT70825L IDT70825S ym 3016
Text: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70825S Active: 775mW (typ.)
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IDT70825S/L
35/45ns
20/25/35/45ns
IDT70825S
775mW
IDT70825L
IDT70825
IDT70825L
IDT70825S
ym 3016
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Intel 82430
Abstract: IDT70824
Text: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random
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IDT70824S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
Intel 82430
IDT70824
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Untitled
Abstract: No abstract text available
Text: INTEGRATED DEVICE bbE D H MÖ25771 0Q12M7D 7TT • IDT HIGH-SPEED 128K 8K x 16 BIT PRELIMINARY SEQUENTIAL-ACCESS In iy n S If RANDOM-ACCESS MEMORY (SARAM ) IDT70825L • FEATURES: • • • • • • • • • • • 8K x 16 Sequential-A ccess Random -Access M em ory
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0Q12M7D
IDT70825L
IL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
3016dnv24
DS-70825-00073
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Untitled
Abstract: No abstract text available
Text: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) F e a tu re s ♦ ♦ ♦ ♦ * High-speed access * - M ilitary: 35/45ns (max.) - Com m ercial: 20/25/35/45ns (max.) Low-power operation - ID T70825S - A ddress based flags fo r b u ffer control
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IDT70825S/L
35/45ns
20/25/35/45ns
T70825S
80-pin
84-pin
MIL-PRF-38535
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 1 28K 8K x 16 BIT PRELIMINARY SEQUENTIAL-ACCESS mJ708S ? RANDOM-ACCESS MEMORY (SARAM ) jdt) Integrated Device Technology, Inc. • FEATURES: • 8K x 16 Sequential-Access Random-Access Memory (SARAM™) - Sequential Access from one port and standard Random
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mJ708S
MIL-STD-883,
84-pln
G84-3)
80-pin
PN80-1)
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) J d t) Integrated Device Technology, Inc. FEATURES: • • • • • H igh-speed access - M ilitary: 35/45ns (max.) - C om m ercial: 20/25/35/45ns (max.) Low -power operation
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IDT70824S/L
35/45ns
20/25/35/45ns
IDT70824S
T70824L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
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Untitled
Abstract: No abstract text available
Text: LSI LOGIC L64740 DCT Quantization Processor DCTQ Description The L64740 performs many of the functions required after the DCT (Discrete Cosine Transform) and before the IDCT (Inverse Discrete Cosine Transform) of the proposed CCITT (Consultative Committee on
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L64740
L64730
L64730.
84-Pin
L64740
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • T h e ID T 7 082 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e SA RA M
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IDT70824S/L
16-bit
IDT70B24S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
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Untitled
Abstract: No abstract text available
Text: DEC 1 9 LSI LOGIC 1990 L64740 DCT Quantization Processor DCTQ Preliminary Description The L64740 performs many of the functions required after the discrete cosine transform (DCT) and before the inverse discrete cosine transform (IDCT) of the proposed International
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L64740
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L64730
Abstract: variable length decoder DCT IDCT select mode lsi jpeg coder
Text: LSI LOGIC L64740 DCT Quantization Processor DCTQ Description The L64740 performs many of the functions required after the DCT (Discrete Cosine Transform) and before the IDCT (Inverse Discrete Cosine Transform) of the proposed CCITT (Consultative Committee on
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L64740
L64730
L64730.
84-Pin
L64730
variable length decoder DCT IDCT select mode
lsi jpeg coder
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Untitled
Abstract: No abstract text available
Text: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) F e a tu re s ♦ ♦ ♦ ♦ * High-speed access * - Military: 35/45ns (max.) - Commercial: 20/25/35/45ns (max.) Low-power operation - IDT70825S - Address based flags for buffer control
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IDT70825S/L
35/45ns
20/25/35/45ns
IDT70825S
775mW
80-pin
84-pin
MIL-PRF-38535
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Untitled
Abstract: No abstract text available
Text: Jdfc/ HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM IDT70825S/L Integrated D e\ ice Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Mem ory (SARAM™) - Sequential Access from one port and standard Random
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IDT70825S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
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Untitled
Abstract: No abstract text available
Text: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features * * High-speed access - Military: 35/45ns (max.) - Commercial:20125135145ns (max.) Low-power operation - IDT70824S Active: 775mW(typ.) Standby: 5mW (typ.)
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IDT70824S/L
35/45ns
20125135145ns
80-pin
84-pin
IDT70824L
MIL-PRF-38535
775mW
4Kx16Sequential
MO-136,
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so 54 t
Abstract: No abstract text available
Text: g MOTOROLA SN54/74LS353 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS The LS TTL/M SI SN 54/74LS 353 is a Dual 4-Input M ultiplexer with 3-state outputs. It can select two bits of data from four sources using common select inputs. The outputs may be individually switched to a high impedance state
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SN54/74LS353
54/74LS
54/74LS253
SN54/74LS353
so 54 t
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EOB-3 E 24
Abstract: "SLDC"
Text: " V : if Nf HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jd t) IDT70824S/L Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • • • • • • • • • • • • T h e ID T 7 0 8 2 4 is a high-speed 4K x 16-bit Sequential
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IDT70824S/L
16-bit
IDT70824S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
EOB-3 E 24
"SLDC"
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Untitled
Abstract: No abstract text available
Text: INTEGRATED DEVICE tflE ]> Hi MÛ2S771 0014232 'lOT « I D T PRELIMINARY HIGH SPEED 128K 8K X 16 BIT IDT70825S SEQUENTIAL ACCESS IDT70825L RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: • • • • • • • • • •
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2S771
IDT70825S
IDT70825L
1DT70825S/L
84-pin
80-pin
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Untitled
Abstract: No abstract text available
Text: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: • High-speed access - Military: 35/45ns (max.) - Commercial: 20/25/35/45ns (max.) • Low-power operation - IDT70825S
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IDT70825S/L
35/45ns
20/25/35/45ns
IDT70825S
775mW
IDT70825L
MIL-STD-883,
84-pin
G84-3)
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Untitled
Abstract: No abstract text available
Text: I: HIGH SPEED 128K 8K x 16 BIT IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jdt) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The ID T70825 is a high-speed 8K x 16bit Sequential Access Random Access Memory (SARAM). The SARAM
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IDT70825S/L
T70825
16bit
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
4A25771
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Untitled
Abstract: No abstract text available
Text: \ S ÏN â HIGH SPEED 128K 8K X 16 BIT IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) y Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random
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IDT70825S/L
GD21031
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
4A2S771
21G32
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM J d t) IDT70824S/L Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random
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IDT70824S/L
MIL-STD-883,
84-pin
G84-3)
80-pin
PN80-1)
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Untitled
Abstract: No abstract text available
Text: TMC2311 TMC2311 CMOS Fast Cosine IVansform Processor 12 Bits, 15 Million Pixels Per Second Description Features The TM C2311, a high-speed algorithm specific ♦ Stand alone execution of 8-point forward or inverse ♦ cosine transform Continuous 8x8-point 2-D DCTs every 4.48 ¿is
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TMC2311
C2311,
12-bit
TMC2311R1C
2311R1C
TMC2311R1C1
2311R1C1
TMC2311R1C2
2311R1C2
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