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    Qualcomm DK-UENERGY-PB-10242-1B

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    DigiKey DK-UENERGY-PB-10242-1B Box 78 1
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    Qualcomm DB-UENERGY-AB-10243-1A

    SMART REMOTE BOARD
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    DigiKey DB-UENERGY-AB-10243-1A Box 14 1
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    Qualcomm DB-UENERGY-AB-10244-1A

    SMART WATCH APPLICATION BOARD
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    DigiKey DB-UENERGY-AB-10244-1A Box 13 1
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    Silicon Laboratories Inc ENERGY-HARVEST-RD

    EVAL BRD C8051F342 SI1012 SI4431
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    Qualcomm DK-UENERGY-PB-10242-2A

    DEV KIT, DK-UENERGY-PB-10242-2A,
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    DigiKey DK-UENERGY-PB-10242-2A Bulk 1
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    ENERGY Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CNB50W-1200-42-CAS Energy Recovery Products 120 & 277 VAC, 90% EFFICIENCY, R Original PDF
    DAL30W-0600-42-T Energy Recovery Products PROGRAMMABLE CC LED DRIVER Original PDF
    DAL50W-0850-56-T Energy Recovery Products PROGRAMMABLE CC LED DRIVER Original PDF
    DAL50W-1200-42-T Energy Recovery Products PROGRAMMABLE CC LED DRIVER Original PDF
    EFM32-G2XX-DK Energy Micro Evaluation Boards - Embedded - MCU, DSP, Programmers, Development Systems, KIT DEVELOPMENT EFM32 GECKO Original PDF
    EFM32-G8XX-DK Energy Micro Evaluation Boards - Embedded - MCU, DSP, Programmers, Development Systems, KIT DEV EFM32 GECKO LCD SUPPORT Original PDF
    EFM32-G8XX-STK Energy Micro Evaluation Boards - Embedded - MCU, DSP, Programmers, Development Systems, KIT STARTER EFM32 GECKO Original PDF
    EFM32GG390F1024-BGA112 Energy Micro Embedded - Microcontrollers, Integrated Circuits (ICs), IC MCU 32BIT 1024KB FLASH 112BGA Original PDF
    EFM32GG390F1024-BGA112T Energy Micro Embedded - Microcontrollers, Integrated Circuits (ICs), IC MCU 32BIT 1MB FLASH 112BGA Original PDF
    EFM32GG390F512-BGA112 Energy Micro Embedded - Microcontrollers, Integrated Circuits (ICs), IC MCU 32BIT 512KB FLASH 112BGA Original PDF
    EFM32GG390F512-BGA112T Energy Micro Embedded - Microcontrollers, Integrated Circuits (ICs), IC MCU 32BIT 512KB FLASH 112BGA Original PDF
    EFM32GG-DK3750 Energy Micro Evaluation Boards - Embedded - MCU, DSP, Programmers, Development Systems, KIT DEV EFM32 GIANT GECKO Original PDF
    EFM32-GXXX-PTB Energy Micro Accessories, Programmers, Development Systems, BOARD PROTOTYPING FOR EFM32 Original PDF
    ENERGY-HARVEST-RD Silicon Laboratories Evaluation and Demonstration Boards and Kits, Programmers, Development Systems, RD ENERGY HARVESTING Original PDF
    JVLM100W-24 Energy Recovery Products 100W 24V CV LED DRIVER IN JUNCTI Original PDF
    JVLM100W-48 Energy Recovery Products 100W 48V CV LED DRIVER IN JUNCTI Original PDF
    JVLM60W-12 Energy Recovery Products 60W 12V CV LED DRIVER IN JUNCTIO Original PDF
    JVLM60W-24 Energy Recovery Products 60W 24V CV LED DRIVER IN JUNCTIO Original PDF
    JVLM60W-48 Energy Recovery Products 60W 48V CV LED DRIVER IN JUNCTIO Original PDF
    NFC_WAND Energy Recovery Products PROGRAMMING CABLE FOR CNB, VZM, Original PDF

    ENERGY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T1P121

    Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
    Text: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating


    OCR Scan     		TIP120, TIP121. TIP122 TIP125, TIP126, TIP127 TIP121, TIP120 T1P121 texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122 PDF

    2N5001

    Abstract: TCA 875 MW-82 2N5149 2N4999
    Text: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias


    OCR Scan     		2N4999. 2N5001, 2N5147, 2N5149 2N5001 TCA 875 MW-82 2N4999 PDF

    2n6325

    Abstract: 2N6323 on 5297 transistor 2N6322 2N6324 NS2N
    Text: TYPES 2N6322 THRU 2N6325 N-P-N SILICON POWER TRANSISTORS TYPES 2N6322 THRU 2N6325 BULLETIN NO. DL-S 7211589, JANUARY HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS • 100-mJ Reverse-Energy Rating • 30-A Rated Continuous Collector Current


    OCR Scan     		2N6322 2N6325 100-mJ 2N6323, 2N6325) 2N6322. 2N6323 2N6324, 2N6323 on 5297 transistor 2N6324 NS2N PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit PDF

    SMD 0402

    Abstract: No abstract text available
    Text: 2381 553 2.6/MLV0402E3.3T Vishay BCcomponents SMD 0402 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor  Inherent bidirectional clamping  Excellent energy/volume ratio  Suitable for reflow soldering  Compliant to RoHS directive 2002/95/EC


    Original     		6/MLV0402E3. 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 SMD 0402 PDF

    12350

    Abstract: PS-12350 24 volt 300 AH
    Text: Rechargeable Sealed Lead-Acid Battery PS-12350 12 Volt 35 Amp. Hrs. Features: Absorbent Glass Mat AGM technology for superior performance. Valve regulated, spill-proof construction. Power/volume ration yielding unrivaled energy density. Recessed fold-down handles for safe and


    Original     		PS-12350 PS-12350 12350 24 volt 300 AH PDF

    STPM10

    Abstract: STM8L152 an 17832 STM8L15 microcontroller schematic
    Text: STEVAL-IPE012V1 Single-phase energy meter demonstration board using the STPM10 and STM8L15 Data brief Features • Accuracy: Class 1 with dynamic range 200:1 ■ Nominal voltage: 240 V ■ Nominal current : 5 A ITYP ■ Maximum current: 45 A (IMAX) ■ Operating range: 0.6 VBAT to 1.2 VBAT


    Original     		STEVAL-IPE012V1 STPM10 STM8L15 STEVAL-IPE012V1 STM8L152 an 17832 STM8L15 microcontroller schematic PDF

    SMARTRF05

    Abstract: cc2541 CC2540EM SWRU297 heart rate sensor SMARTRF05 cc2540 C_1U_0402_X5R_K_6P3 CC2541EM CC2542 interface CC2540
    Text: Bluetooth Low Energy CC2540 Development Kit CC2541 Evaluation Module Kit User’s Guide Document Number: SWRU301A Development Kit Part Number: CC2540DK, CC2541EMK SWRU301 TABLE OF CONTENTS 1. REFERENCES. 4


    Original     		CC2540 CC2541 SWRU301A CC2540DK, CC2541EMK SWRU301 CC2540DK SMARTRF05 CC2540EM SWRU297 heart rate sensor SMARTRF05 cc2540 C_1U_0402_X5R_K_6P3 CC2541EM CC2542 interface CC2540 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output


    Original     		TPIC6259 SLIS009A 250-mA PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic P o w er F -M O S F E T s 2SK2375 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown 5X ■ A pplications • • • • • Non-contact relay


    OCR Scan     		2SK2375 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y 28-pin 10-year bq4010 536-bit PDF

    gpsu15b-8

    Abstract: ul1185 18awg diode 66a IEC320-C8
    Text: GS15B 7.2~15W AC-DC Single Output Desktop series Features : Universal AC input / Full range No load power consumption <0.5W Meet energy star level IV CEC for 5 ~ 48V Meet EISA 2007 (Energy Independence and Security Act) for 5 ~ 48V 2 pole AC inlet IEC320-C8


    Original     		GS15B IEC320-C8 GS15B-0P1J GS15B-1P1J GS15B-11P1J GS15B-2P1J GS15B-3P1J GS15B-4P1J GS15B-5P1J GS15B-6P1J gpsu15b-8 ul1185 18awg diode 66a IEC320-C8 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns PDF

    Metal-Oxide Varistor

    Abstract: VARISTOR 64 NV73D2A Metal Varistor Data Sheet SMD MARKING CODE 2A smd transistor marking 1j NV73DL2BTTE68 NV73DL2BTTE27
    Text: 1733 Reader's Spreads pg1-203:document 1/27/09 4:29 PM Page 189 NV73DL multilayer type metal oxide varistor automotive EU • SMD type metal oxide varistors • Ideal for countermeasures against ESD (Conforming to IEC61000-4-2) • High maximum energy type


    Original     		pg1-203 NV73DL IEC61000-4-2) 2005/95/EC 1000h, 500m/s2, 1000h Metal-Oxide Varistor VARISTOR 64 NV73D2A Metal Varistor Data Sheet SMD MARKING CODE 2A smd transistor marking 1j NV73DL2BTTE68 NV73DL2BTTE27 PDF

    MLV-0603

    Abstract: No abstract text available
    Text: 2381 553 3.6/MLV0603E3.3T Vishay BCcomponents SMD 0603 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor  Inherent bidirectional clamping  Excellent energy/volume ratio  Suitable for reflow soldering  Compliant to RoHS directive 2002/95/EC and in


    Original     		6/MLV0603E3. 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MLV-0603 PDF

    TPIC6A595NE

    Abstract: tpic6a595 SLIS005B
    Text: TPIC6A595 POWER LOGIC 8ĆBIT SHIFT REGISTER SLIS005B − APRIL 1993 − REVISED MAY 2005 D D D D D D D Low rDS on . . . 1 Ω Typ Output Short-Circuit Protection Avalanche Energy . . . 75 mJ Eight 350-mA DMOS Outputs 50-V Switching Capability Devices Are Cascadable


    Original     		TPIC6A595 SLIS005B 350-mA TPIC6A595NE PDF

    IDC7328

    Abstract: No abstract text available
    Text: IDC-7328 Vishay Dale High Current, Surface Mount Inductors FEATURES • • • • • High energy storage Low resistance Tape and reel packaging for automatic handling Compliant to RoHS Directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition


    Original     		IDC-7328 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 IDC7328 PDF

    MVSF2N02EL

    Abstract: MVSF2N02ELT1G
    Text: MGSF2N02EL, MVSF2N02EL Power MOSFET 2.8 Amps, 20 Volts, N−Channel SOT−23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.


    Original     		MGSF2N02EL, MVSF2N02EL OT-23 OT-23 MGSF2N02EL/D MVSF2N02ELT1G PDF

    SMF30AG

    Abstract: SMF58AG SMF33AG SMF36AG SMF48AG SMF51AG SMF58A SMF5.0AT1 SMF5.0AT1g
    Text: SMF5.0AT1G Series, SZSMF5.0AT1G Series 200 W Transient Voltage Suppressor SOD-123 Flat Lead Package The SMF5.0AT1G Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and


    Original     		OD-123 SMF58A) SMF30AG SMF58AG SMF33AG SMF36AG SMF48AG SMF51AG SMF58A SMF5.0AT1 SMF5.0AT1g PDF

    2955g

    Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
    Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original     		NTF2955, NVF2955, NVF2955P OT-223 NTF2955/D 2955g NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to ‹ Higher Current Rating withstand high energy in the avalanche mode and switch ‹ Lower Rds on efficiently. This new high energy device also offers a ‹ Lower Capacitances


    Original     		CMT04N60 O-252 O-220/TO-220FP PDF

    Untitled

    Abstract: No abstract text available
    Text: 53 Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 53 Φ SERIES FEATURES — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.


    Original     		621KD53 681KD53 751KD53 781KD53 821KD53 911KD53 951KD53 102KD53 112KD53 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32ĭ SERIES DATA SHEET METAL OXIDE VARISTOR – 32ĭ SERIES FEATURE — — — — Wide operating voltage V1mA range from 33V to 1600V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.


    Original     		J-STD-020 821KD32 911KD32 951KD32 102KD32 112KD32 122KD32 142KD32 162KD32 15-Feb-12 PDF