EN3906 Search Results

Contextual Info: 1SV246 Ordering number : EN3906A SANYO Semiconductors DATA SHEET 1SV246 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features • • • Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits

3986A

Abstract: EN3906 LB8620M
Contextual Info: Ordering number: EN3906 Monolithic Digital 1C LB8620M Low-voltage, Low-saturation, Dual-motor Driver OVERVIEW PINOUT The LB8620M is a low-voltage, low-saturation, dualmotor driver IC that incorporates four independently adjustable, constant-voltage outputs for forward and

Contextual Info: 1SV246 Ordering number : EN3906A SANYO Semiconductors DATA SHEET 1SV246 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features • • • Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits

Contextual Info: Ordering number : EN3906A 1SV246 PIN Diode http://onsemi.com Dual series PIN Diode for VHF, UHF and AGC 50V, 50mA, rs=typ 5Ω, MCP Features • • • Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits

LA7451M

Abstract: ia745 NF02
Contextual Info: Ordering number: EN3906A M on olithic Linear 1C LA7451M Two-channel, Noise Reduction Processor for 8-mm VCR PCM Package Dimensions Overview The LA7451M is a two-channel, noise reduction proces­ sor IC for 8-mm video recorder, pulse code modulation PCM circuits.

en3906

Abstract: CV Series sanyo 1SV246 MARKING CV
Contextual Info: Ordering number :EN3906 1SV246 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features Package Dimensions • Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SV246-applied equipment to be made

Contextual Info: Ordering number: EN3906 1SV246 No.3906 SANTO i Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications F e a tu re s • Series connection of 2 elements in a very small-sized package facilitates high-density mounting and perm its lSV246-applied equipment to be made smaller.

2N3638

Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW

2N5139

Abstract: 2N4121 2N4122 EN3904 2n3569 2n3569 to-105 2n4355 2N3906/MPSA70
Contextual Info: TRANSISTORS—SMALL SIGNAL PNP GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) *V CER * VOLTS TYPE MIN V CE(sat) LU LL V CEO VOLTS @ *c mA MAX hlFE MIN - MAX @ @ 50 @ 2N5221

BF441

Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK