EN2007C Search Results
EN2007C Datasheets Context Search
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Contextual Info: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s |
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EN2007C 2SA1419/2SC3649 2SA1419 250mm2 | |
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Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity |
Original |
2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419 | |
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Contextual Info: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity |
Original |
2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419 |