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    Sumitomo Electric Device Innovations Usa EMM5077VU

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    Sumitomo Electric Device Innovations Usa EMM5077VUT

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    EMM5077VU Datasheets Context Search

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    EMM5077

    Abstract: EMM5077VU ED-4701 RO4003 C100p
    Text: ES/EMM5077VU Preliminary C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 31.0 dBm Typ. •High Gain; GL = 26 dB(Typ.) •Wide Frequency Band ; 3.4 – 5.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5077VU is a power amplifier MMIC that


    Original     		ES/EMM5077VU ES/EMM5077VU 1906B, EMM5077 EMM5077VU ED-4701 RO4003 C100p PDF

    EMM5077

    Abstract: EMM5077VU RO4003 25C3422 PIN20 EMM5077VUT
    Text: EMM5077VU C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 31.0 dBm Typ. •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin/Zout = 50ohm •Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION


    Original     		EMM5077VU 50ohm EMM5077VU EMM5077 RO4003 25C3422 PIN20 EMM5077VUT PDF

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    Abstract: No abstract text available
    Text: EMM5077VU C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 31.0 dBm Typ. •High Linear Gain: GL = 26 dB (Typ.) •Broad Band: 3.4 to 5.0 GHz •Impedance Matched Zin/Zout = 50ohm •Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION


    Original     		EMM5077VU 50ohm EMM5077VU PDF

    EMM5077VU

    Abstract: RO4003 EMM5077
    Text: EMM5077VU C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 31.0 dBm Typ. •High Linear Gain: GL = 26 dB(Typ.) •Broad Band: 3.4 – 5.0 GHz •Impedance Matched Zin/Zout = 50Ω •Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION


    Original     		EMM5077VU EMM5077VU REC0158 1906B, RO4003 EMM5077 PDF