Untitled
Abstract: No abstract text available
Text: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • • EMIPAK-2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE 600 V VCES
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VS-ETF075Y60U
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES • Ultrafast Trench IGBT technology • HEXFRED and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal
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VS-ENQ030L120S
VS-ENQ030L120S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Outline Dimensions www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit 3 ± 0.15 12 ± 0.35 4.3 ± 0.3 DIMENSIONS in millimeters 56.8 ± 0.3 52.7 ± 0.5 51 ± 0.15 20.4 Ø 16.6 4.4 ±0 16 16 12.8 9.6 9.6 12.8 6.4 3.2 6.4 37 ± 0.5 42.5 ± 0.15 53 ± 0.15
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25-Jun-14
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Untitled
Abstract: No abstract text available
Text: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance
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VS-ETL015Y120H
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Outline Dimensions Vishay Semiconductors EMIPAK2 DIMENSIONS in millimeters 15.2 12.7 8.9 Front view 55 ± 0.3 Pins position with tolerance Ø 1 ± 0.1 M4 Ø 0.4 5.1 14 11.4 10.2 7.6 7.6 6.4 3.8 2.6 1.3 13.3 3.2 1.9 1.3 5.1 2.5 6.3 Detail “A” Scale 10:1
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27-Jan-11
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Untitled
Abstract: No abstract text available
Text: Outline Dimensions www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit 12 ± 0.35 4.1 ± 0.3 3 ± 0.15 DIMENSIONS in millimeters 48 ± 0.3 62.8 ± 0.5 53 ± 0.15 42.5 ± 0.2 .5 37 ± 0.5 x8 12.8 12.8 9.6 9.6 6.4 3.2 6.4 16.4 20.4 28.1 ± 0.2 33.8 ± 0.3
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27-Jun-14
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Untitled
Abstract: No abstract text available
Text: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • EMIPAK-2B EMIPAK 2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE VCES
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VS-ETF075Y60U
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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dec M4 diode
Abstract: VS-EMG050J60N
Text: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA
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VS-EMG050J60N
2002/95/EC
VS-EMG050J60N
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
dec M4 diode
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Untitled
Abstract: No abstract text available
Text: VS-ETF150Y65U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A FEATURES • Trench IGBT technology • FRED Pt clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal
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VS-ETF150Y65U
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES • Ultrafast Trench IGBT technology • HEXFRED and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal
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Original
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PDF
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VS-ENQ030L120S
VS-ENQ030L120S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES • Ultrafast Trench IGBT technology • HEXFRED and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance
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Original
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PDF
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VS-ENQ030L120S
E78996
VS-ENQ030L120S
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance
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VS-ETL015Y120H
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VISHAY DiodE 400
Abstract: VS-EMG050J60N
Text: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • • EMIPAK2 PRODUCT SUMMARY NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor
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VS-EMG050J60N
E78996
VS-EMG050J60N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VISHAY DiodE 400
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HALF-bridge inverter
Abstract: INDICATOR EM c467 VS-EMF050J60U
Text: VS-EMF050J60U Vishay Semiconductors 3-Levels Half-Bridge Inverter Stage, 60 A/57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA EMIPAK2 • Operating frequency 60 kHz to 150 kHz
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VS-EMF050J60U
2002/95/EC
VS-EMF050J60U
11-Mar-11
HALF-bridge inverter
INDICATOR EM
c467
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VS-EMG050J60N
Abstract: No abstract text available
Text: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 PRODUCT SUMMARY VCES 600 V VCE ON typical at IC = 50 A 1.8 V IC at TC = 98 °C 50 A Speed 30 kHz to 150 kHz NPT Warp2 PFC IGBT with low VCE(ON)
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VS-EMG050J60N
E78996
VS-EMG050J60N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VISHAY SEMICONDUCTORS www.vishay.com Power Modules Application Note Mounting Instructions for Modules EMIPAK-1B, EMIPAK-2B Series By Kevin Liu This application note introduces Vishay’s EMIPAK rectifier-switch modules and discusses the assembly and PCB issues involved in their use.
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22-Dec-14
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IGBT with V-I characteristics
Abstract: No abstract text available
Text: VS-ETF150Y65U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A FEATURES • Trench IGBT technology • FRED Pt clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance
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VS-ETF150Y65U
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IGBT with V-I characteristics
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Untitled
Abstract: No abstract text available
Text: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance
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Original
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PDF
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VS-ETL015Y120H
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VS-EMG050J60N
Abstract: No abstract text available
Text: VS-EMG050J60N Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA Operating frequency 60 kHz to 150 kHz
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VS-EMG050J60N
2002/95/EC
VS-EMG050J60N
11-Mar-11
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VS-EMG050J60N
Abstract: No abstract text available
Text: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA
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VS-EMG050J60N
2002/95/EC
VS-EMG050J60N
11-Mar-11
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60 SMD 5050 Ultra Bright LEDs
Abstract: MMA 0204 HV - Professional
Text: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative
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VMN-MS6495-1011
60 SMD 5050 Ultra Bright LEDs
MMA 0204 HV - Professional
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40MT160KPBF
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Power Modules FEATURED PRODUCTS Standard Recovery Diode Modules Fast Recovery Diode Modules Schottky Modules Ultrafast Modules Thyristor Modules IGBT Modules RESOURCES • For technical support, contact Modules@vishay.com
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VMN-SG2183-1411
DISC4-9337-2726
40MT160KPBF
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R3361
Abstract: XC166 sso-12 conducted emission receiver strong schematic diagram strong XC161 8059 microcontroller transistor P2P 250nm
Text: Application Note, V1.1, September 2006 AP16099 Scalable Pads E l ec tr ica l S p eci f ica t io n o f S c a la bl e Ou t pu t D r i vers i n 2 50 nm C M O S Te c hn ol og y XC166 Microcontroller Family Microcontrollers Never stop thinking. AP16099 Scalable Output Drivers of XC166 Family
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AP16099
XC166
R3361
sso-12
conducted emission
receiver strong schematic diagram
strong
XC161
8059 microcontroller
transistor P2P
250nm
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draloric potentiometers cermet 581
Abstract: WISTRON power sequence
Text: Build Vishay into your Design VISHAY INTERTECHNOLOGY, INC. Corporate Headquarters // 63 Lancaster Avenue Malvern, PA 19355-2120 // United States p: 610.644.1300 // f: 610.296.0657 225289_Vishay_AR_CVR_R1.indd 1-3 ve Di mp Co e rs Di ve www.vishay.com 20 on
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