EMIPAK Search Results
EMIPAK Price and Stock
Vishay Intertechnologies VS-ETY020P120FRectifiers SW Mod - EMIPAK 2B |
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VS-ETY020P120F | Tray | 60 |
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Vishay Intertechnologies VS-ENV020M120MDiode Modules MODULES RECTIFIERS 1200V 20A |
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VS-ENV020M120M | Bulk | 100 |
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Vishay Intertechnologies VS-ENV020F65UDiode Modules MODULES RECTIFIERS 650V 20A |
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VS-ENV020F65U | Bulk | 100 |
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Vishay Intertechnologies VS-ENY050C60MOSFET Modules EMIPAK 600V 50A N-CH SIC |
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VS-ENY050C60 | Bulk | 100 |
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Vishay Intertechnologies VS-ENW30S120TDiode Modules MODULES RECTIFIERS - EMIPAK 1B |
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VS-ENW30S120T | Bulk | 100 |
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EMIPAK Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • • EMIPAK-2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE 600 V VCES |
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VS-ETF075Y60U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES • Ultrafast Trench IGBT technology • HEXFRED and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal |
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VS-ENQ030L120S VS-ENQ030L120S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Outline Dimensions www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit 3 ± 0.15 12 ± 0.35 4.3 ± 0.3 DIMENSIONS in millimeters 56.8 ± 0.3 52.7 ± 0.5 51 ± 0.15 20.4 Ø 16.6 4.4 ±0 16 16 12.8 9.6 9.6 12.8 6.4 3.2 6.4 37 ± 0.5 42.5 ± 0.15 53 ± 0.15 |
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25-Jun-14 | |
Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Outline Dimensions Vishay Semiconductors EMIPAK2 DIMENSIONS in millimeters 15.2 12.7 8.9 Front view 55 ± 0.3 Pins position with tolerance Ø 1 ± 0.1 M4 Ø 0.4 5.1 14 11.4 10.2 7.6 7.6 6.4 3.8 2.6 1.3 13.3 3.2 1.9 1.3 5.1 2.5 6.3 Detail “A” Scale 10:1 |
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27-Jan-11 | |
Contextual Info: Outline Dimensions www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit 12 ± 0.35 4.1 ± 0.3 3 ± 0.15 DIMENSIONS in millimeters 48 ± 0.3 62.8 ± 0.5 53 ± 0.15 42.5 ± 0.2 .5 37 ± 0.5 x8 12.8 12.8 9.6 9.6 6.4 3.2 6.4 16.4 20.4 28.1 ± 0.2 33.8 ± 0.3 |
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27-Jun-14 | |
Contextual Info: VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Three Levels Half-Bridge Inverter Stage, 75 A FEATURES • • • • • • • • • • • EMIPAK-2B EMIPAK 2B package example PRODUCT SUMMARY Q1 - Q4 IGBT STAGE VCES |
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VS-ETF075Y60U 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
dec M4 diode
Abstract: VS-EMG050J60N
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VS-EMG050J60N 2002/95/EC VS-EMG050J60N 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 dec M4 diode | |
Contextual Info: VS-ETF150Y65U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A FEATURES • Trench IGBT technology • FRED Pt clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal |
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VS-ETF150Y65U E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES • Ultrafast Trench IGBT technology • HEXFRED and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal |
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VS-ENQ030L120S VS-ENQ030L120S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES • Ultrafast Trench IGBT technology • HEXFRED and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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VS-ENQ030L120S E78996 VS-ENQ030L120S 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VISHAY DiodE 400
Abstract: VS-EMG050J60N
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VS-EMG050J60N E78996 VS-EMG050J60N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VISHAY DiodE 400 | |
HALF-bridge inverter
Abstract: INDICATOR EM c467 VS-EMF050J60U
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VS-EMF050J60U 2002/95/EC VS-EMF050J60U 11-Mar-11 HALF-bridge inverter INDICATOR EM c467 | |
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VS-EMG050J60NContextual Info: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 PRODUCT SUMMARY VCES 600 V VCE ON typical at IC = 50 A 1.8 V IC at TC = 98 °C 50 A Speed 30 kHz to 150 kHz NPT Warp2 PFC IGBT with low VCE(ON) |
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VS-EMG050J60N E78996 VS-EMG050J60N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Power Modules Application Note Mounting Instructions for Modules EMIPAK-1B, EMIPAK-2B Series By Kevin Liu This application note introduces Vishay’s EMIPAK rectifier-switch modules and discusses the assembly and PCB issues involved in their use. |
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22-Dec-14 | |
IGBT with V-I characteristicsContextual Info: VS-ETF150Y65U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A FEATURES • Trench IGBT technology • FRED Pt clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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VS-ETF150Y65U E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IGBT with V-I characteristics | |
Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VS-EMG050J60NContextual Info: VS-EMG050J60N Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA Operating frequency 60 kHz to 150 kHz |
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VS-EMG050J60N 2002/95/EC VS-EMG050J60N 11-Mar-11 | |
VS-EMG050J60NContextual Info: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA |
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VS-EMG050J60N 2002/95/EC VS-EMG050J60N 11-Mar-11 | |
60 SMD 5050 Ultra Bright LEDs
Abstract: MMA 0204 HV - Professional
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VMN-MS6495-1011 60 SMD 5050 Ultra Bright LEDs MMA 0204 HV - Professional | |
40MT160KPBFContextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Power Modules FEATURED PRODUCTS Standard Recovery Diode Modules Fast Recovery Diode Modules Schottky Modules Ultrafast Modules Thyristor Modules IGBT Modules RESOURCES • For technical support, contact Modules@vishay.com |
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VMN-SG2183-1411 DISC4-9337-2726 40MT160KPBF | |
R3361
Abstract: XC166 sso-12 conducted emission receiver strong schematic diagram strong XC161 8059 microcontroller transistor P2P 250nm
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AP16099 XC166 R3361 sso-12 conducted emission receiver strong schematic diagram strong XC161 8059 microcontroller transistor P2P 250nm | |
draloric potentiometers cermet 581
Abstract: WISTRON power sequence
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