EM128L16 Search Results

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Altera Corporation EM128L16B-55 EM128L16B-55
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	EM128L16B-55		35			1 $20 10 $15 100 $13 1000 $13 10000 $13	Buy Now

EM128L16 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EM128L16B-55		NanoAmp Solutions	SRAM Chip, Asynchronous, 2Mbit, 2.5V\|3.3V Supply, Industrial, BGA, 48-Pin		Original	PDF
EM128L16T		NanoAmp Solutions	128K x 16 bit Ultra-Low Power Asynchronous Static RAM		Original	PDF
EM128L16T-55		NanoAmp Solutions	SRAM Chip, Asynchronous, 2Mbit, 2.5V\|3.3V Supply, Industrial, TSOP, 44-Pin		Original	PDF

EM128L16 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
EM128L16T Abstract: 48-PIN Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128L16 Preliminary EM128L16 Family 128Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128L16 is a integrated memory device containing a low power 2 Mbit Static Random Access	Original	EM128L16 EM128L16 128Kx16 EM128V16 EM128L16B EM128L16T EM128L16T 48-PIN	PDF
EM128L16T Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128L16 EM128L16 Family 128Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128L16 is an integrated memory device containing a low power 2 Mbit Static Random	Original	EM128L16 EM128L16 128Kx16 EM128V16 EM128L16T	PDF
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L163WN1A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16bit Overview Features The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access	Original	N02L163WN1A 16bit N02L163WN1A	PDF
N02L63W2AT25I Contextual Info: N02L63W3A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16bit Overview Features The N02L63W3A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON	Original	N02L63W3A 16bit N02L63W3A N02L63W2AT25I	PDF
N02L163WN1AB2 Abstract: N02L163WN1AT N02L163WN1A N02L163WN1AB N02L163WN1AT2 Contextual Info: AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N02L163WN1A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16bit Overview • Single Wide Power Supply Range 2.3 to 3.6 Volts	Original	N02L163WN1A 16bit N02L163WN1A N02L163WN1AB2 N02L163WN1AT N02L163WN1AB N02L163WN1AT2	PDF
N02L163WN1A Abstract: N02L163WN1AB N02L163WN1AT Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L163WN1A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview Features The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access	Original	N02L163WN1A 128Kx16 N02L163WN1A N02L1618N1A, N02L163WN1AB N02L163WN1AT	PDF