EM 1C Search Results

EM1C

Abstract: AM01 AM01A AM01Z EM01 EM01A EM01Z EM 1C
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM (A) Tj (°C)

EM1C

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AM01Z AM01 AM01A EM01Z EM01 EM01A EM 1Y EM 1Z EM 1 EM 1A EM 1B EM 1C 200 400 600 200 400 600 100 200 400 600 800 1000 IFSM

MAX232 CPE

Abstract: KS24C641 LXT905PC am29lv040 LV245 ADAPTER circuit AC TO DC 220V TO 6V rj11 to usb connection diagram intel max232 download manual de samsung SP232ACN
Contextual Info: ABOUT SCMDS-EM S5N8946/S5N8944/S5N8943 SCMDS-EM BOARD USER MANUAL PURPOSE This manual describes how to set up, configure, and utilize SCMDS-EM. The following topics are addressed in this manual. ¨ The minimum system requirements to use SCMDS-EM. ¨ References to the background and related documentation

Contextual Info: Europe: +49 / 7731 8399 0 I Em ail: info@ m eder.com Item No.: US A: +1 / 508 295 0771 I Em ail: salesusa@ m eder.com 9213901504 Asia: + 8 5 2 /2 9 5 5 1682 I Em ail: salesasia@ m eder.com Item: MK21M-1C90C-5000W Preliminary Datasheet Magnetic properties Pull-In

RM1Z 05

Abstract: 11-Series RM1A
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. EM 2 EM 2A EM 2B RM 1Z RM 1 RM 1A RM 1B RM 1C RM 11A RM 11B RM 11C IFSM (A) Tj (°C) 50Hz Half-cycle Sinewave Single Shot Others IR (H)

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. EM 2 EM 2A EM 2B RM 1Z RM 1 RM 1A RM 1B RM 1C RM 11A RM 11B RM 11C Tj （℃） IFSM （A） Tstg （℃） 50Hz Half-cycle Sinewave

eye response curve

Abstract: han 8 U-M
Contextual Info: SIEMENS DISPLAY GRAPHS 1A R e lative spectral em issio n I rel * í X ; Ta =25*‘ C, V (?.)=standardeye response curve X 1B Relative spectral em issio n lReL=f(X); TA= 25“ C, V(A.)=standard eye response curve X 1C R elative spectral em ission lREi_=f(?0; T a = 2 5 1C, V{X)=standard eye response curve

Contextual Info: Memory IC 16kbit serial ferroelectric memory BR 24C F16F The BR24CF16F is a non-volatile ferroelectric m em ory developed for use in ROHM’s non-volatile m em ory technolo­ gy and ferroelectric technology. Using a ferroelectric m em ory enables faster w riting speeds than EEPROM and flash

Contextual Info: WDC THE WESTERN DESIGN CENTER, INC. W65C02S SECTION 6 APPLICATION INFORMATION Table 6-1 W65C02S Instruction Set-Alphabetical Sequence AD C Add m em ory to A ccum ulator with Carry AND "A N D ” M em ory w ith Accum ulator ♦ORA "OR" M em ory with A ccum ulator

Contextual Info: MEDER electronic Europe: +49 / 7731 8399 0 I Em ail: info@ m eder.com Item No.: US A: +1 / 508 295 0771 I Em ail: salesusa@ m eder.com 2209146002 Asia: + 8 5 2 /2 9 5 5 1682 I Em ail: salesasia@ m eder.com Item: MK09-1A46/1-C Magnetic properties Pull in Test equipm ent

stati ram 16k

Contextual Info: g M O T O R O L A Product Preview 1 M egabit D ynam ic M em ory C o n tro ller (DMC) The MC74F29368 Dynamic M em ory Controller (DMC) is designed to be an integral part of today's high performance m em ory systems. The DMC functions as the address con­

S40S

Abstract: AN-305 DP8408A DP8408AD DP8408AN DP8408AN-3 rasistor 8408a
Contextual Info: DP8408A CT1 National Jit Semiconductor DP8408A Dynamic RAM Controller/Driver General Description Operational Features D ynam ic m em ory system designs, w hich form erly required several support chips to drive the m em ory array, can now be im plem ented w ith a single 1C . . . the DP8408A Dynamic

sod6 package

Abstract: 4C500L 4C500 UT 161
Contextual Info: MITSUBISHI LSIs M5M4C500L-5,-6,-10 4 9 1 5 2 0 -B IT 8 1 9 2 0 -WORD B Y 6 -B IT F IE L D M EM ORY DESCRIPTION The M 5M 4C 500L is a fie ld m em ory consisting o f a mem­ o ry array o f 320 rows x 256 columns x 6 bits a serial in p u t m em ory o f 256 x 6 bits, and a serial o u tp u t m em ory o f

Contextual Info: HIGH RADIANCE LIGHT EMITTING DIODES ME1XX3 SERIES FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES ME1XX3 are AIGaAs double heterostructure light • Low operating current 50mA em itting diodes (LED) em itting light beams around 850nm wavelength.

communication between cpu and iop

Abstract: A1v9 M8286 M8289 M8088 M8089 m8288 M8284 A1V013 m8268
Contextual Info: P R s y im iA iiw in te T M8089 8 & 16-BIT HMOS I/O PROCESSOR Military 1 M byte Addressability High Speed DMA Capabilities Including I/O to Mem ory, M em ory to I/O , M em ory to M em ory, and I/O to I/O Supports LOCAL or REMOVE I/O Processing MiAPX 86, 88 Compatible: Rem oves I/O

2SD400

Abstract: 2SB544
Contextual Info: Ordering number:EN 199J SA\YO N0.199J 2 : 2SB544 A bsolute M axim um R atings at Ta = 25c'C Collector to Base Voltage Vcbo Collector to Em itter Voltage VcEo Em itter to Base Voltage VEBO Collector Current

kst5551

Contextual Info: KST5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 • Collector-Em itter Voltage : V c e o = 160V • Collector Dissipation : Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

Contextual Info: Sensors Photointerrupter using photo 1C, double-layer mold type RPI-1133 T h e R P I-1133 is a com pact, transm issive-type photointerrupter. T he em itter is a GaAs infrared light em itting diode and the detector is a silicon photo IC. •E x te rn a l dimensions Unit: mm

DP8409AN

Abstract: DP8409AD DP8409A D48A N48A V68A interface 64K RAM with 8086 MP dps409
Contextual Info: DP8409A yw\National ÉHASemiconductor DP8409A Multi-Mode Dynamic RAM Controller/Driver General Description Operational Features D ynam ic m em ory system designs, which form erly required several support chips to drive the m em ory array, can now be im plem ented w ith a single 1C . , . the D P8409A M ulti­

BF199

Abstract: TFK U 217 B transistor BF 199 TFK 505 BF 199 transistor bf 199 lamb TFK 001 TFK 505 am TFK U 111 B
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on em itter configuration,

Contextual Info: T O SH IB A TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 M EM ORY TESTERS U nit in mm LOGIC 1C TESTERS DATA RECORDING EQUIPMENT MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared em itting diode optically coupled to a photo-MOSFET in a 8-pin DIP package

188es board

Abstract: AMD k86
Contextual Info: A m 186 EM an d A m 188™ EM Advanced Micro Devices High-Performance, 80C186- and 80C188-Compatible, 16-Bit Embedded Microcontrollers DISTINCTIVE CHARACTERISTICS • E86™ fami ly 80C186- and 80C188-com patible m icrocontrollers with enhanced bus interface

Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo = 3 5 0 V • Collector Dissipation'. Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA= 2 5 ) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

ksp2907

Contextual Info: KSP2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V c e o ” 40V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS <Ta= 2 5 T :) C haracteristic Collector-Base Voltage Collector-Em itter Voltage