EDE2116ACBG
Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3
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E1610E30
240-pin
M01E0706
EDE2116ACBG
EDJ2116DASE
ECM220ACBCN
ELPIDA EDJ2116DASE
EDE1116AGBG
EDE2116ACBG-1J-F
GDDR5
EDJ1108DBSE-GN-F
ELPIDA lpddr
EDE1116AGBG-1J-F
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GDDR5
Abstract: Elpida GDDR5 GDDR5 pcb layout BGA-78 gddr5 controller E1600E10 GDDR5 layout Elpida GDDR3 GDDR5 application note POD-15
Text: USER’S MANUAL Introduction To GDDR5 SGRAM Document No. E1600E10 Ver. 1.0 Date Published March 2010 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 INTRODUCTION Intended Audience This manual is intended for users who design application systems using Graphics Double Data Rate 5 (GDDR5) Synchronous
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E1600E10
M01E0706
GDDR5
Elpida GDDR5
GDDR5 pcb layout
BGA-78
gddr5 controller
E1600E10
GDDR5 layout
Elpida GDDR3
GDDR5 application note
POD-15
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EDJ2116DASE
Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG
Text: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド 目 次 1. DDR3
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J1610E30
240-pin
EDU1032AABG
136-FBGA
M01J0706
TEL033281-1563
TEL066390-8727
EDJ2116DASE
EDE2116ACBG
ECM220ACBCN
ELPIDA EDJ2116DASE
EDJ1108DBSE
EDE1032AGBG
GDDR5
EDX1032BASE
DDR3-1333H
EDE1116AGBG
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Rambus XDR
Abstract: DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400
Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor performance becomes more robust.
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512Mb
x16-bit
GDDR3-1600
DDR3-1333
64MB/system
DDR2-667
DDR2-1066
Rambus XDR
DDR3-1333
XDR Rambus
DDR2 x32
ELPIDA DDR3
XDR DRAM
DDR2-667
DDR2-800
DDR333
DDR400
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RFU20
Abstract: G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer
Text: 5 4 D 3 2 CH-A NVIDIA PCI-E x16 CH-B FCBGA 820pin MXM CONNECTOR D VRAM GDDR3 8Mx32 16Mx32 Page8 Channel C is available on G73M only CRT C VRAM GDDR3 8Mx32 16Mx32 Page7 G72M G73M TV 1 C LVDS Page3 ~ 6 2.5V B B 3.3V Page2 VIN VCORE VRM VCORE 1.8V VRM 1.8V Page9
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8Mx32
16Mx32
820pin
NONPHY-X16
FG-13X91-20-230P
H-C236D118P2
RFU20
G72M
sc413
BLM18PG181SN1D
nvidia g72m
7SH02
nvidia MXM
MXM CONNECTOR
G72M-V
quanta computer
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DDR3-1333
Abstract: DDR2-1066 ASIC XDR Rambus 104-FBGA DDR2-667 DDR2-800 DDR333 DDR400 ddr3 1333
Text: XDR DRAM 最新の高性能グラフィックスや高画質HDTV対応のホームサーバなど、先端の3D画像や高精細なデジタル 画像を扱うデジタル家電市場で、膨大なデータを瞬時に処理できるメモリの需要が高まっています。
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512Mb
512Mb
x16I/ODRAM6
400MHz,
500MHz,
600MHz
I/ODRSL200V
DDR333
104FBGA
DDR2-667
DDR3-1333
DDR2-1066
ASIC
XDR Rambus
104-FBGA
DDR2-800
DDR333
DDR400
ddr3 1333
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Qualcomm MSM7225
Abstract: GTM382 LTN121AT01-1 TS-L633 MSM7225 samsung dl6 TCC3110 NVIDIA geforce 5200 WD3200BEVT LTN121W1-L03
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 2. Introduction and Specification 2-1. Instroduction High Performance Note PC High Performance with Intel Core 2 Duo Processor and DDR II Memory
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X4500
JODD500
Qualcomm MSM7225
GTM382
LTN121AT01-1
TS-L633
MSM7225
samsung dl6
TCC3110
NVIDIA geforce 5200
WD3200BEVT
LTN121W1-L03
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DDR2 x32
Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
K4J55323QF-GC12
K4J55323QF-GC14/16/20
DDR2 x32
GC14
K4J55323QF-GC
K4J55323QF-GC14
K4J55323QF-GC16
t8n 800
ELPIDA DDR User
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DDR2 x32
Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
K4J55323QF-G
DDR2 x32
GDDR3 SDRAM 256Mb
K4J55323QF-GC
K4J55323QF-GC12
K4J55323QF-GC14
MICRON gddr3
K4J55323QF-GC20
Gl WL02
Elpida GDDR3
T12N
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K4J55323QF-GC20
Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM Revision 1.8 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4J55323QF-GC
256Mbit
K4J55323QF-GC20
K4J55323QF-GC
K4J55323QF-GC12
K4J55323QF-GC14
gddr3
Gl WL02
A/SAMSUNG GDDR3
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K4J55323QF-GC20
Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 DDR2 x32 ELPIDA ddr2 RAM
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.3 June 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
-GC12
20very
K4J55323QF-GC20
K4J55323QF-GC
K4J55323QF-GC12
K4J55323QF-GC14
K4J55323QF-GC16
DDR2 x32
ELPIDA ddr2 RAM
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Untitled
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.
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K4J55323QF-GC
256Mbit
32Bit
K4J55323QF-GC12
K4J55323QF-Max
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Untitled
Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 / Apr. 2004
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HY5RS573225F
8Mx32)
HY5RS573225
240ohm
240ohms
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ELPIDA DDR User
Abstract: No abstract text available
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
HY5RS573225AFP
500/600MHz
3XOOHG/RZWR9664
ELPIDA DDR User
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Untitled
Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004
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HY5RS573225F
8Mx32)
240ohm
240ohms
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HY5RS573225AFP-14
Abstract: 11mmx14mm HY5RS573225AFP-16 136ball HY5RS573225AFP HY5RS573225AFP-12 hynix gddr3 hy5rs573225afp-11
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
500/600MHz
HY5RS573225AFP-14
11mmx14mm
HY5RS573225AFP-16
136ball
HY5RS573225AFP
HY5RS573225AFP-12
hynix gddr3
hy5rs573225afp-11
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136ball
Abstract: HY5RS573225AFP2 HY5RS573225AFP samsung k9 derating HY5RS573225AFP-11
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
500/600MHz
136ball
HY5RS573225AFP2
HY5RS573225AFP
samsung k9 derating
HY5RS573225AFP-11
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HY5RS573225F
Abstract: HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 HY5RS573225F-18 HY5RS573225F-20 ELPIDA DDR User
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004
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HY5RS573225F
8Mx32)
240ohm
240ohms
HY5RS573225F
HY5RS573225F-12
HY5RS573225F-13
HY5RS573225F-14
HY5RS573225F-15
HY5RS573225F-16
HY5RS573225F-18
HY5RS573225F-20
ELPIDA DDR User
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HY5RS123235
Abstract: ELPIDA DDR User BA2-H10
Text: HY5RS123235F 512M 16Mx32 GDDR3 SDRAM HY5RS123235F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235F
16Mx32)
HY5RS123235F
HY5RS123235
ELPIDA DDR User
BA2-H10
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Untitled
Abstract: No abstract text available
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225F
8Mx32)
1HY5RS573225F
240ohm
240ohms
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Untitled
Abstract: No abstract text available
Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225AFP
8Mx32)
500/600MHz
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HY5RS573225FP-2
Abstract: No abstract text available
Text: HY5RS573225F P 256M (8Mx32) GDDR3 SDRAM HY5RS573225F(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225F
8Mx32)
1HY5RS573225F
HY5RS573225
240ohm
240ohms
HY5RS573225FP-2
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HY5RS573225F
Abstract: HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 1600-Mbps
Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225F
8Mx32)
1HY5RS573225F
240ohm
240ohms
HY5RS573225F
HY5RS573225F-12
HY5RS573225F-13
HY5RS573225F-14
HY5RS573225F-15
HY5RS573225F-16
1600-Mbps
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HY5RS573225FP-2
Abstract: winbond HY5RS573225F DQ243 HY5RS573225FP POD18
Text: HY5RS573225F P 256M (8Mx32) GDDR3 SDRAM HY5RS573225F(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS573225F
8Mx32)
1HY5RS573225F
HY5RS573225
240ohm
240ohms
HY5RS573225FP-2
winbond
DQ243
HY5RS573225FP
POD18
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