ELECTRONIC TRANSISTOR CORP Search Results

ELECTRONIC TRANSISTOR CORP Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
ECASD61C107M012KA0	Murata Manufacturing Co Ltd	7343 (7343M)/100μF±20%/16Vdc/12mOhm
ECASD61A157M010KA0	Murata Manufacturing Co Ltd	7343 (7343M)/150μF±20%/10Vdc/10mOhm
DLW21SH670HQ2L	Murata Manufacturing Co Ltd	CMC SMD 67ohm 320mA POWRTRN
DLW21SH900HQ2L	Murata Manufacturing Co Ltd	CMC SMD 90ohm 280mA POWRTRN

ELECTRONIC TRANSISTOR CORP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor d261 Abstract: D311 transistor M61516FP 7.1ch transistor D311 analog audio 3 input selector loudness control PIN23 QFP80-P-1420-0 d31 b Text: MITSUBISHI SOUND PROCESSOR ICs M61516FP 7.1ch ELECTRONIC VOLUME WITH 10 INPUT SELECTOR APPLICATION Receiver,AV Amp,Mini Stereo etc. FEATURE FUNCTION FEATURE Electronic Volume 1 8 channel Independent Electronic Volume with High Voltage Transistor. (0~-92dB/1dBstep,-95,- dB)	Original	M61516FP -92dB/1dBstep 10dB/2dBstep 0/-3/-6/-9/-12dB 80P6N-A transistor d261 D311 transistor M61516FP 7.1ch transistor D311 analog audio 3 input selector loudness control PIN23 QFP80-P-1420-0 d31 b	PDF
M61522FP Abstract: QFP80-P-1420-0 D310 Text: M61522FP 8ch ELECTRONIC VOLUME WITH 8 INPUT SELECTOR REJ03F0034-0100Z Rev.1.0 Sep.19.2003 Feature FUNCTION FEATURE Electronic Volume 8 channel Dependant Electronic Volume with High Voltage Transistor. 0~-99dB/ 1dBstep, -∞dB Input Selector (1) Front L/R channel 8 Input Selector.(Main/Sub)	Original	M61522FP REJ03F0034-0100Z -99dB/ 0/-3/-6/-9/-12dB) M61522FP QFP80-P-1420-0 D310	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
D4164 Abstract: 5557A Text: M61516FP 7.1ch Electronic Volume with 10 Input Selector REJ03F0204-0200 Rev.2.00 Sep 14, 2006 Application Receiver, AV Amp, Mini Stereo etc. Feature • Electronic volume 1 8 channel Independent Electronic Volume with High Voltage Transistor. (0 ~ –92 dB/1 dB step, –95, –∞ dB)	Original	M61516FP REJ03F0204-0200 D4164 5557A	PDF
M61516FP Abstract: No abstract text available Text: M61516FP 7.1ch Electronic Volume with 10 Input Selector REJ03F0204-0201 Rev.2.01 Mar 31, 2008 Application Receiver, AV Amp, Mini Stereo etc. Feature • Electronic volume 1 8 channel Independent Electronic Volume with High Voltage Transistor. (0 ~ –92 dB/1 dB step, –95, –∞ dB)	Original	M61516FP REJ03F0204-0201 M61516FP	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic	Original	C11531E)	PDF
5bb1 Abstract: C11531E Text: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic	Original	C11531E) 5bb1 C11531E	PDF
ELECTRONIC BALLAST 12v Abstract: FJP5304D TRANSISTOR hFE-100 Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	FJP5304D O-220 FJP5304D ELECTRONIC BALLAST 12v TRANSISTOR hFE-100	PDF
Untitled Abstract: No abstract text available Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application	Original	KSC5603D O-220	PDF
150a gto Abstract: QS 100 NPN Transistor 200H KSC5603D Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application	Original	KSC5603D O-220 150a gto QS 100 NPN Transistor 200H KSC5603D	PDF
OC 140 germanium transistor Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor Text: HI-SINCERITY Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-126ML Features • Charger-up time is about 1 ms faster than of a germanium transistor.	Original	HD200203 HSD879D O-126ML 183oC 217oC 260oC OC 140 germanium transistor germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor	PDF
germanium transistors NPN Abstract: in 3003 TRANSISTOR HSD879D Germanium Transistor Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2002.02.26 Page No. : 1/3 HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. Features TO-126ML • Charger-up time is about 1 ms faster than of a germanium transistor.	Original	HD200203 HSD879D O-126ML germanium transistors NPN in 3003 TRANSISTOR HSD879D Germanium Transistor	PDF
C11531E Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA	Original	C11531E) C11531E	PDF
OC 140 germanium transistor Abstract: HSD879 Germanium Transistor transistor h2a Text: HI-SINCERITY Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-92 Features • Charger-up time is about 1 ms faster than of a germanium transistor	Original	HA200207 HSD879 183oC 217oC 260oC OC 140 germanium transistor HSD879 Germanium Transistor transistor h2a	PDF

j5304d Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d Text: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit	Original	FJU5304D FJU5304D j5304d J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list transistor j5304d	PDF
transistor 12v 1A NPN Abstract: fje5 Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application	Original	FJE5304D FJE5304D O-126 transistor 12v 1A NPN fje5	PDF
OC 140 germanium transistor Abstract: germanium transistors NPN HM879 Germanium Transistor Text: HI-SINCERITY Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. SOT-89 Features • Charger-up time is about 1 mS faster than of a germanium transistor.	Original	HM200203 HM879 OT-89 183oC 217oC 260oC OC 140 germanium transistor germanium transistors NPN HM879 Germanium Transistor	PDF
HSD879 Abstract: Germanium Transistor ha2002 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2002.02.25 Page No. : 1/3 HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. Features TO-92 • Charger-up time is about 1 ms faster than of a germanium transistor	Original	HA200207 HSD879 HSD879 Germanium Transistor ha2002	PDF
HM200 Abstract: HM879 marking 3A sot-89 Germanium Transistor Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3 HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. Features SOT-89 • Charger-up time is about 1 mS faster than of a germanium transistor.	Original	HM200203 HM879 OT-89 HM200 HM879 marking 3A sot-89 Germanium Transistor	PDF
TRANSISTOR A22 Abstract: No abstract text available Text: DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA	Original	C11531E) TRANSISTOR A22	PDF
j5304d Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application	Original	FJE5304D FJE5304D O-126 FJE5304DTU j5304d j5304 transistor j5304d NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o	PDF
trace code TO-220 Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram	Original	FJP3307D FJP3307D O-220 FJP3307DH1 FJP3307DH1TU FJP3307DH2 FJP3307DH2TU FJP3307DTU trace code TO-220 J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D	PDF
FJP13007 Abstract: electronic ballast with npn transistor Text: FJP13007 NPN Silicon Transistor FJP13007 NPN Silicon Transistor High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast and Switching Regulator 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter	Original	FJP13007 FJP13007 O-220 electronic ballast with npn transistor	PDF
BUT93 Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11 Text: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e	OCR Scan	r-23-il 0G2142b T-33-11 BUT93 BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11	PDF

ELECTRONIC TRANSISTOR CORP Search Results

ELECTRONIC TRANSISTOR CORP Result Highlights (5)

ELECTRONIC TRANSISTOR CORP Datasheets Context Search

transistor d261

M61522FP

rjh3047

D4164

M61516FP

Untitled

5bb1

ELECTRONIC BALLAST 12v

Untitled

150a gto

OC 140 germanium transistor

germanium transistors NPN

C11531E

OC 140 germanium transistor

j5304d

transistor 12v 1A NPN

OC 140 germanium transistor

HSD879

HM200

TRANSISTOR A22

j5304d

trace code TO-220

FJP13007

BUT93