ELECTRONIC TRANSISTOR CORP Search Results

transistor d261

Abstract: D311 transistor M61516FP 7.1ch transistor D311 analog audio 3 input selector loudness control PIN23 QFP80-P-1420-0 d31 b
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M61516FP 7.1ch ELECTRONIC VOLUME WITH 10 INPUT SELECTOR APPLICATION Receiver,AV Amp,Mini Stereo etc. FEATURE FUNCTION FEATURE Electronic Volume 1 8 channel Independent Electronic Volume with High Voltage Transistor. (0~-92dB/1dBstep,-95,- dB)

M61522FP

Abstract: QFP80-P-1420-0 D310
Contextual Info: M61522FP 8ch ELECTRONIC VOLUME WITH 8 INPUT SELECTOR REJ03F0034-0100Z Rev.1.0 Sep.19.2003 Feature FUNCTION FEATURE Electronic Volume 8 channel Dependant Electronic Volume with High Voltage Transistor. 0~-99dB/ 1dBstep, -∞dB Input Selector (1) Front L/R channel 8 Input Selector.(Main/Sub)

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

D4164

Abstract: 5557A
Contextual Info: M61516FP 7.1ch Electronic Volume with 10 Input Selector REJ03F0204-0200 Rev.2.00 Sep 14, 2006 Application Receiver, AV Amp, Mini Stereo etc. Feature • Electronic volume 1 8 channel Independent Electronic Volume with High Voltage Transistor. (0 ~ –92 dB/1 dB step, –95, –∞ dB)

M61516FP

Contextual Info: M61516FP 7.1ch Electronic Volume with 10 Input Selector REJ03F0204-0201 Rev.2.01 Mar 31, 2008 Application Receiver, AV Amp, Mini Stereo etc. Feature • Electronic volume 1 8 channel Independent Electronic Volume with High Voltage Transistor. (0 ~ –92 dB/1 dB step, –95, –∞ dB)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic

5bb1

Abstract: C11531E
Contextual Info: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic

ELECTRONIC BALLAST 12v

Abstract: FJP5304D TRANSISTOR hFE-100
Contextual Info: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time

BUT93

Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11
Contextual Info: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e

Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

150a gto

Abstract: QS 100 NPN Transistor 200H KSC5603D
Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

OC 140 germanium transistor

Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor
Contextual Info: HI-SINCERITY Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-126ML Features • Charger-up time is about 1 ms faster than of a germanium transistor.

germanium transistors NPN

Abstract: in 3003 TRANSISTOR HSD879D Germanium Transistor
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2002.02.26 Page No. : 1/3 HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. Features TO-126ML • Charger-up time is about 1 ms faster than of a germanium transistor.

C11531E

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA

FJE5304D

Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

j5304d

Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
Contextual Info: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit

transistor 12v 1A NPN

Abstract: fje5
Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

OC 140 germanium transistor

Abstract: germanium transistors NPN HM879 Germanium Transistor
Contextual Info: HI-SINCERITY Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. SOT-89 Features • Charger-up time is about 1 mS faster than of a germanium transistor.

HSD879

Abstract: Germanium Transistor ha2002
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2002.02.25 Page No. : 1/3 HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. Features TO-92 • Charger-up time is about 1 ms faster than of a germanium transistor

HM200

Abstract: HM879 marking 3A sot-89 Germanium Transistor
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3 HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. Features SOT-89 • Charger-up time is about 1 mS faster than of a germanium transistor.

TRANSISTOR A22

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA

j5304d

Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

trace code TO-220

Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
Contextual Info: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram

FJP13007

Abstract: electronic ballast with npn transistor
Contextual Info: FJP13007 NPN Silicon Transistor FJP13007 NPN Silicon Transistor High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast and Switching Regulator 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter