Untitled
Abstract: No abstract text available
Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron
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S11141
S11142
S11141:
S11142:
SE-171
KSPD1080E01
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Untitled
Abstract: No abstract text available
Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron
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S11141
S11142
S11141:
S11142:
SE-171
KSPD1080E01
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electron Detector
Abstract: S11142 United Detector silicon photodiode electron electron gun SE-171
Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron
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S11141
S11142
S11141:
S11142:
SE-171
KSPD1080E01
electron Detector
S11142
United Detector silicon photodiode
electron
electron gun
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Untitled
Abstract: No abstract text available
Text: QUAD ELECTRON DETECTOR 15 mm2 AXUVPS7 Dimensions are in inch [metric] units. FEATURES • Ideal for electron detection • Circular active area • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PER ELEMENT PARAMETERS TEST CONDITIONS MIN TYP MAX
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Untitled
Abstract: No abstract text available
Text: QUAD ELECTRON DETECTOR 15 mm2 AXUVPS7 Dimensions are in inch [metric] units. FEATURES • Ideal for electron detection • Circular active area • 100% internal QE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PER ELEMENT PARAMETERS TEST CONDITIONS MIN TYP MAX
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windmill design
Abstract: 918* replacement R5150-30
Text: ELECTRON PRELIMINARY DATA FEB. 1998 MULTIPLIER R5150-30 The R5150-30 series is a new family of ion detectors developed by means of Hamamatsu unique electron trajectory simulation technology. The R5150-30 series has excellent noise elimination effects and an off-axis electrode structure
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R5150-30
R5150-30
S-164-40
1007E01
windmill design
918* replacement
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Electron Multipliers
Abstract: No abstract text available
Text: PRODUCT LINE-UP Electron multipliers are mainly used as positive/negative ion detectors. They are also useful for detecting and measuring vacuum UV rays and soft X-rays. Hamamatsu electron multipliers have a high gain multiplication factor yet low dark current, allowing
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R4146-10
R6985-80
R8811
R2362
R5150-10
SE-164
TPMH1354E01
B1201
Electron Multipliers
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R5150-10
Abstract: No abstract text available
Text: ELECTRON PRELIMINARY DATA FEB. 1998 MULTIPLIER R5150-10 The R5150-10 is a new family of Hamamatsu ion detector. Thanks to Hamamatsu unique electron trajectory simulation technology, it delivers high gain, fast response and wide dynamic range. A newly developed secondary emitting surface
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R5150-10
R5150-10
S-164-40
1006E01
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windmill design
Abstract: R5150-30 R5150-80
Text: ELECTRON MULTIPLIER PRELIMINARY DATA FEB. 1998 R5150-80 The R5150-80 is a new family of ion detector developed by means of Hamamatsu unique electron trajectory simulation technology. The R5150-80 has excellent noise elimination effects and an off-axis electrode structure and conversion type
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R5150-80
R5150-80
S-164-40
1008E01
windmill design
R5150-30
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GaAs tunnel diode
Abstract: tunnel diode GaAs darlington transistor for audio power application photo thyristor diode tunnel DATASHEET TUNNEL DIODE Tunnel diode tunnel diode high frequency photocoupler Thyristor transistor power
Text: Philips Semiconductors Pro Electron Type Numbering System General PRO ELECTRON TYPE NUMBERING SYSTEM U Basic type number W surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples
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R5150
Abstract: R5150-90
Text: PRELIMINARY Compact Ion Detectors R5150-50, -90 Detection Efficiency vs. Input Ion Energy Structure R5150-90 GND Q-POLE FARADAY-CUP The electron lens created by the Faraday cup, the ion deflection electrodes and the electron multiplier electrodes maintains high detection efficiency even when input ion energy increases.
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R5150-50,
R5150-90
R5150-
B0059EA
SE-171-41
R5150
R5150-90
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Untitled
Abstract: No abstract text available
Text: ELECTRON DETECTION 100 mm2 AXUV100G FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh
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AXUV100G
254nm,
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Untitled
Abstract: No abstract text available
Text: ELECTRON DETECTION 100 mm2 AXUV100G FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh
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AXUV100G
254nm,
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AXUV100
Abstract: No abstract text available
Text: ELECTRON DETECTION 100 mm2 AXUV100 FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS TYP MAX 100 10mm x 10mm Active Area
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AXUV100
AXUV100
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C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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Untitled
Abstract: No abstract text available
Text: ELECTRON DETECTION 100 mm2 AXUV100 FEATURES • Ideal for electron detection • Large detection area • 100% internal QE Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS TYP MAX 100 10mm x 10mm Active Area
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AXUV100
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Untitled
Abstract: No abstract text available
Text: CHAPTER 12 ELECTRON MULTIPLIER TUBES AND ION DETECTORS Electron multiplier tubes EMT are capable of detecting light at relatively short wavelengths such as soft X-rays and vacuum UV (VUV) radiation and charged particles such as electrons and ions. Ion detectors are designed and optimized for ion detection in mass spectrometers.1) 2) 3)
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S12237-02P
Abstract: No abstract text available
Text: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36
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pmt amplifier circuit
Abstract: pmt divider circuit ICF114 pmt circuit pmt high voltage pmt divider circuit transistor H8770 vacuum tube amplifier electron Detector hamamatsu PMT
Text: AR Y MI N PR ELI Electron Detection Unit H8770 HAMAMATSU has introduced new Electron Detection Unit H8770, consist of newly developed extremely fast decay phosphor and high sensitivity compact PMT. Decay time of the phosphor is faster than 1ns, and it can present
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H8770
H8770,
TPMOB0152EA
720ps
SE-171-41
TPMO0121E01
pmt amplifier circuit
pmt divider circuit
ICF114
pmt circuit
pmt high voltage
pmt divider circuit transistor
H8770
vacuum tube amplifier
electron Detector
hamamatsu PMT
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BPW50
Abstract: BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70
Text: Philips Semiconductors General Pro electron type numbering PRO ELECTRON TYPE NUMBERING SYSTEM T Control or switching device; e.g. thyristor, low power; with special third letter U Transistor; power, switching W Surface acoustic wave device Basic type number
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the10.
BPW50-6,
BPW50-9,
BPW50-12.
BZW70-9V1
BZW10-15B.
BLU80-24.
BPW50
BZY74-C6V3
BZW70
BPW50-12
bzw10
BYT-100
BZW10-15
Byt100
BPW50-9
DIODE BZW70
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OFWG*3203
Abstract: OFWG colour tv power supply bu 1802 chn 719 TRANSISTOR NPN D313 TDA3654 equivalent R1413 TDA2653 colour tv power supply circuit diagram TDA2578
Text: Philips Semiconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintenance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits
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BA481
toSAA7197
SAA7199
TDA4680
TDA4685
pA733C
OFWG*3203
OFWG
colour tv power supply bu 1802
chn 719
TRANSISTOR NPN D313
TDA3654 equivalent
R1413
TDA2653
colour tv power supply circuit diagram
TDA2578
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pj 929 diode picture
Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits
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BA481
SAA7197
SAA7199B
TDA4680
TDA4685
pA733C
LFC02
MEH469
pj 929 diode picture
bf471
A7R SMD Transistor
TDA8391
transistor f488
tda8351 pin-compatible
tda1000
Germanium drift transistor
marking 3U 3T 3C diode
germanium transistor
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BYX38-600
Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
Text: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given
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BYX38-600
BZY93-C7V5
BYX38
BZY93
germanium rectifier diode
byx38 diode
germanium varactor diode
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step recovery diode
Abstract: No abstract text available
Text: yv TYPE DESIGNATION PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits —, m ultiples o f such devices and semiconductor chips. "A lth o u g h not all type numbers accord w ith the Pro Electron system, the follow ing explanation is given
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