ELECTRO-STATE INDUSTRIES Search Results

Contextual Info: 7KLVSDJHLQWHQWLRQDOO\OHIWEODQN Nexus 1262/1272 Meter Installation and Operation Manual Version 1.15 Published by: Electro Industries/GaugeTech 1800 Shames Drive Westbury, NY 11590 All rights reserved. No part of this publication may be reproduced or transmitted in

INTEL SDK-80

Abstract: 8255 intel microprocessor architecture 8255 programmable peripheral interface applications intel 8080 lm 7407 buffer chip lt 302d intel 8080 manual intel 8080 assembly language 8255 Intel AP-15
Contextual Info: intel APPLICATION NOTE AP-15 Intel Corporation, 1976 P R IC E $ 1 00 Contents INTRODUCTION. 1 O V E R V IE W .1 8255 Programmable

Semitron Industries

Abstract: thyristor td 330 n zener DO-41 semitron surge
Contextual Info: SEHITRON INDUSTRIES LTD ME D • 813784-i 0DDÜ107 S « S L C B TM T 7 Î - H - Z 3 SERIES-P3-RANGE Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 230V - 365V ■300A Peak Pulse Current APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,

Contextual Info: H3E I SEUITRON INDUSTRIES LTD TJ • 813768=1 0000105 4 « S L C B 'T - W - T 'b TM SERIES- PI-RANGE Transient Voltage Suppressor ■Glass Passivated Junction Voltage Range 68V - 350 Volts ■100A Peak Pulse Current APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,

pgke

Abstract: pgke 200 6KE91 pgke33a P-P8KE130 KE39A KE47 PGKE13 FP6KE11A P-P6KE12
Contextual Info: 013760=1 QQQGCm 2 ŒSLCB H3E D SEÎ1ITR0N INDUSTRIES LTD r- SERIES Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6V8 - 200 Volts ■600W Peak Pulse Power 1.5 Watt Steady State ■ Provisional Release ■ High Rel APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,

T10N.C

Abstract: melf footprint PA-080
Contextual Info: SEHITRON INDUSTRIES LTD 43E D Û137flâ*i 0000132 7 W S L C B "T- TIO-NUTIO-NC SERIES Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 68V - 350 Volts ■100A Peak Pulse Current NEW GENERATION APPLICATIONS ■ Transient voltage suppression for Induced Lightning, NEMP,

IN5908

Abstract: IN5908 diodes IN5907 IN5555 in5556 h8 diode zener IN5558
Contextual Info: SEMITRON INDUSTRIES LT» M3E » B 00G0124 fi E S SLCB I N 5 5 5 5 , 5 5 5 6 , 5 5 5 7 , 5 5 5 8 , I N 5 9 0 7 , 5 9 8 S E R I E S Transient Voltage Suppressor •Glass Passivated junction Voltage Range 6 -1 9 1 Volts ■1.5KW Peak Pulse Power 1.0 Watt Steady State ■IN5907 CECC Release

v8408g

Contextual Info: NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK http://onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature,

fischer connector

Abstract: FISCHER 102 ASSEMBLY FISCHER 103 ASSEMBLY Fischer DG CONNECTOR A004 FISCHER S 104 FISCHER 102 dbpe 103 FISCHER ASSEMBLY
Contextual Info: Customer information fischer connectors fischer sales network Shortform catalogue Contact us for more What is the optimal connector shell size for my application? Would a plastic housing be better than a metal one? Could my connection mix fiber optic and electrical contacts? For my

Contextual Info: NCV7707 Door-Module Driver-IC The NCV7707 is a powerful Driver−IC for automotive body control systems. The IC is designed to control several loads in the front door of a vehicle. The monolithic IC is able to control mirror functions like mirror positioning, heating and folding including the electro−chromic

Contextual Info: NCV7707 Product Preview Door-Module Driver-IC The NCV7707 is a powerful Driver−IC for automotive body control systems. The IC is designed to control several loads in the front door of a vehicle. The monolithic IC is able to control mirror functions like

Contextual Info: NCV7707 Door-Module Driver-IC The NCV7707 is a powerful Driver−IC for automotive body control systems. The IC is designed to control several loads in the front door of a vehicle. The monolithic IC is able to control mirror functions like mirror positioning, heating and folding including the electro−chromic

Contextual Info: NCV7707 Door-Module Driver-IC The NCV7707 is a powerful Driver−IC for automotive body control systems. The IC is designed to control several loads in the front door of a vehicle. The monolithic IC is able to control mirror functions like mirror positioning, heating and folding including the electro−chromic

Contextual Info: NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK http://onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature,

Contextual Info: NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK http://onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature,

Contextual Info: NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK http://onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature,

Contextual Info: 013760=1 Q Q Q G C m H3E D SEÎ1ITR0N INDUSTRIES LTD 2 ŒSLCB r- SERIES Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6V8 - 200 Volts ■600W Peak Pulse Power 1.5 Watt Steady State ■Provisional Release ■High Rel APPLICATIONS ■ Transient voltage suppression for induced lightning, NEMP,

Contextual Info: NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK http://onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature,

B5218

Abstract: uc 1201a 14001-1
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9

Contextual Info: This document, NCV7361/D is Not Recommended for New Design. Please refer to NCV7361A/D. 12/Oct/2004  Semiconductor Components Industries, LLC, 2004 October, 2004 − Rev. 1 1 Publication Order Number: NCV7361/D NCV7361 NCV7361 Voltage Regulator with Integrated LIN Transceiver

SK47

Contextual Info: SEHITRON INDUSTRIES LTD 43E D Hi ô l 3 7 û ô cî GQ0G122 M B S L C B SERIES Transient Voltage Suppressor •Glass Passivated Junction Voltage Range 6V8 to 200 Volts ■1.5VV Peak Pulse Power 1.0 Watt Steady State ■CECC Approval High Rel ■Military Approval

phototriac

Abstract: Optocoupler with triac circuits 2 amp triac driver opto arc welder schematic schematic diagram for thyristor controls heater phototriac design solutions Optocoupler with triac microwave oven magnetron TRIAC application note AN vdrm INTERNATIONAL RECTIFIER power switching scrs
Contextual Info: Vishay Semiconductors Phototriac Application Note Introduction As is the case for TRIACs in general, phototriacs have traditionally been used as solid-state AC switches. As a matter of fact, in many industries such as industrial and process control, it is not uncommon to use the

phototriac

Abstract: schematic diagram for thyristor controls heater OPTOCOUPLER thyristor 4N39 OPTOCOUPLER trigger thyristor scr Zero Crossing Triac Driver Output Optocoupler controlling heater with triac thyristor dc controller schematic magnetron tube Optocoupler with triac circuits microwave oven transformer
Contextual Info: Vishay Semiconductors Phototriac Application Note Introduction As is the case for TRIACs in general, phototriacs have traditionally been used as solid-state AC switches. As a matter of fact, in many industries such as industrial and process control, it is not uncommon to use the

SMA rf pogo pin

Abstract: oryx
Contextual Info: o -Sì ESD Compliance Testing and Recommended Protection Circuits for GaAs Devices £ -ä oc o V i t 'S ^5 "o ro $ Introduction Alpha Industries conducts ESD testing at both the device and system levels. These tests are based on the requirements outlined in: