Untitled
Abstract: No abstract text available
Text: ESAD25 C,N,D (15A) (200V to 400V / 15A) Outline drawings, mm FAST RECOVERY DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5 ±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 JEDEC EIAJ Features High voltage by mesa design
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ESAD25
SC-65
ESAD25C
ESAD25-
et-02
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PDF
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Hitachi DSA002748
Abstract: No abstract text available
Text: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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Original
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HRW0202A
ADE-208-209E
HRW0202A
Hitachi DSA002748
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PDF
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Hitachi DSA001653
Abstract: No abstract text available
Text: HRC0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-210E Z Rev 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.
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Original
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HRC0202A
ADE-208-210E
Hitachi DSA001653
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PDF
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hitachi S17
Abstract: HRW0202A SC-59A DSA003641
Text: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev. 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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Original
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HRW0202A
ADE-208-209E
hitachi S17
HRW0202A
SC-59A
DSA003641
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PDF
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HRW0202B
Abstract: SC-59A DSA003641
Text: HRW0202B Silicon Schottky Barrier Diode for Rectifying ADE-208-345A Z Rev. 1 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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Original
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HRW0202B
ADE-208-345A
HRW0202B
SC-59A
DSA003641
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PDF
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HRF22
Abstract: Hitachi DSA00358
Text: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22
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Original
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HRF22
ADE-208-163D
HRF22
Hitachi DSA00358
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYW29E series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance
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BYW29E
O220AC)
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PDF
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BYV29X600
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast FEATURES BYV29X-600 SYMBOL QUICK REFERENCE DATA VR = 600V • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance
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Original
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BYV29X-600
OD113
OT186a)
BYV29X-600
BYV29X600
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PDF
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ESAD9
Abstract: 20A 100 V Low VF
Text: ESAD92-02 20A ( 200V / 20A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.1 0.5 1.5 5.45 5.45 Features JEDEC EIAJ Low VF
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Original
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ESAD92-02
SC-65
ESAD9
20A 100 V Low VF
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PDF
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Hitachi DSA0045
Abstract: SC-59A HRW0302A
Text: HRW0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-015G Z Rev 7 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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Original
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HRW0302A
ADE-208-015G
Hitachi DSA0045
SC-59A
HRW0302A
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PDF
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Untitled
Abstract: No abstract text available
Text: Chip Resistor Networks MNR Series < General Purpose > Features 1 Can be mounted even more densely than chip resistors. 2) Mounting cost can be reduced by less frequency of mounting times. 3) Convex electrodes secures visual inspection of fillets after soldering.
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Original
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ISO9001
TS16949
AEC-Q200
MNR02
MNR04
MNR12
MNR14
MNR15
R1120A
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PDF
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a473
Abstract: MA020 A-473 ESAC87-009 SC-65 esac87 CC180
Text: ESAC87-009H6A i Outline Drawings SC H O TTKY B A R R IE R DIODE ^3.2±o ' 15 . 5 maj i 5iC * 13.0 , JU / r" H S f- -2.0 ! T.Zto 1 ' m CD GÌ) 0.5- ' Features JEDEC • te V F EIAJ Low VF SC-65 • x -r Super high speed sw itch in g . • R tt Connection Diagram
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OCR Scan
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ESAC87-009I16A)
SC-65
500ns,
ESAC87-009
a473
MA020
A-473
SC-65
esac87
CC180
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PDF
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Schottky Diode SC-62
Abstract: SE069
Text: COLLMER SEMICONPUCTOR INC MAE J> 52307^2 S E 0 6 9 o.95A 0QD1754 5fll • C O L _ ^ P 0 3 >- 1 I Outline Drawings SCHO TTKY BA RRIER DIODE 16 MAX. r 0.44 MAX. ■ Features • Surface mount device • Low V F • Super high speed switching.
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OCR Scan
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SE069
0QD1754
SC-62
500ns
0DG17SL,
Schottky Diode SC-62
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PDF
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SE046
Abstract: sin wave to square 15X15 oc sc62
Text: COLLMER S E M I C O N D U C T O R INC 4flE D 52307^2 D00174fl 2flfl « C O L SE046 o .95 A 'T-oi - u Outline D raw ings SC HO TTK Y BARRIER D IO D E 16 4.6 MAX. m a :K. 18 MAX. 1 tili3» 1) 0.55 MAXJ_J_ 0.44 MAX. . • Features • Surface m ount device •
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OCR Scan
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SE046
D00174fl
SC-62
500ns
52Bfl7TS
017SD
15X15
sin wave to square
15X15
oc sc62
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 20FWJ2C48M,U20FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 20FWJ2C48M, U20FWJ2C48M SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage : V pM= 0.47V • Repetitive Peak Reverse Voltage
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OCR Scan
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20FWJ2C48M
U20FWJ2C48M
20FWJ2C48M,
20FWJ2C48M
12-10D1A
12-10D2A
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PDF
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single phase full bridge inverter
Abstract: K2-SS
Text: SILICON DIFFUSED TYPE RECTIFIER MODULE O THREE PHASE FULL W A V E BRIDGE APPLICATIONS. O INVERTER E Q U IP M EN T FOR AC M O T O R CONTROL. O O 20L6P45 Unit in mm CHOPPER EQ U IPM EN T FOR DC M O T O R CONTROL. 15.510.3 15.5jt0-3 D C SUPPLY FOR BATTERY. O
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OCR Scan
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20L6P45
60sec.
60sec)
single phase full bridge inverter
K2-SS
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48, SF10J48, USF10G48, USF10J48 M EDIUM PO W ER CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current
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OCR Scan
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SF10G48
SF10J48
USF10G48
USF10J48
SF10G48,
SF10J48,
USF10G48,
SF10G48-SF10J48
USF10G48-USF10J48
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PDF
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sm4500
Abstract: Gate Turn-off Thyristor sg3000gxh24 SG3000GXH24
Text: SG3000GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH24 SG3000GXH24 Unit in mm INVERTER APPLICATION RepetiUve Peak Off-State Voltage : 4500V R.M.S On-State Current : I t (R M S ) = 1200A Peak Turn-Off Current : I t GQM = 3000A Critical Rate of Rise of On-State Current : d i/d t= 4 0 0 A ///s
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OCR Scan
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SG3000GXH24
SG3000GXH24)
sm4500
Gate Turn-off Thyristor sg3000gxh24
SG3000GXH24
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PDF
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MIG20J951H
Abstract: No abstract text available
Text: TOSHIBA INTEGRATED GTR MODULE MIG20J951H Unit in mm High Power Switching Applications 1S.3Í1.0 15.3 Í 1.0 Motor Control Applications • Integrates Inverter, Converter and Brake Power Circuits in One Package. • Output Inverter Stage : 302OA/6OOV High Speed Type IGBT
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OCR Scan
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MIG20J951H
302OA/6OOV
103OA/8OOV
5A/600V
PW02130796
MIG20J951H
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PDF
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DIODE 20FL2C
Abstract: No abstract text available
Text: TOSHIBA 20DL2C48A,U20DL2C48A,20FL2C48A,U20FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2C48A, U20DL2C48A, 20FL2C48A, U20FL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V r r m = 200, 300V
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OCR Scan
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20DL2C48A
U20DL2C48A
20FL2C48A
U20FL2C48A
20DL2C48A,
U20DL2C48A,
20FL2C48A,
20DL2C48A-20FL2C48A
20DL2C48
DIODE 20FL2C
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PDF
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MO133A
Abstract: No abstract text available
Text: HM5117800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-632C Z Rev. 3.0 Feb. 24, 1997 Description The Hitachi HM5117800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800 offers Fast Page Mode
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OCR Scan
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HM5117800
152-word
ADE-203-632C
28-pin
ns/60
MO133A
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SM 16GZ51,SM 16JZ51 TO SHIBA BI-DIRECTIO NAL TRIODE THYRISTOR SILICON DIFFUSED TYPE SM16GZ51, SM16JZ51 U nit in mm AC POWER CONTROL APPLICATIONS • Repetitive Peak off-State Voltage v DRM = 400> 600 v • R.M.S On-State C urrent rT RMS = 16A •
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OCR Scan
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16GZ51
16JZ51
SM16GZ51,
SM16JZ51
SF16GZ47
SF16JZ47
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PDF
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Untitled
Abstract: No abstract text available
Text: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.
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OCR Scan
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T0-220AB,
SC-45
T0-220AA)
T0-220FIÃ
LSXSC-67^
OT-189
weight-Og186,
T0-220MF
SC-65,
O-218)
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION / Repetitive Peak Reverse Voltage v RRM = 60°v Average Output Rectified Current
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OCR Scan
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20JL2C41A
961001EAA2'
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PDF
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