UAF3000
Abstract: No abstract text available
Text: Union Semiconductor, Inc. UM5204 http://www.union-ic.com Quad Channel Low Capacitance ESD Protection Diode Array General Description UM5204 are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from
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UM5204
UM5204
SC-70-6
SC-89-6
UAF3000
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PCB footprint cqfp 132
Abstract: schematic impulse sealer xc4010e-pq208 footprint pga 84 TSOP 54 PIN footprint 14mm x 20 mm .65mm bga land pattern QFP PACKAGE thermal resistance die down XC4013E-PQ240 XC7272A XC7318
Text: Packages and Thermal Characteristics August 6, 1996 Version 1.2 Number of Available I/O Pins Max 44 64 68 84 100 120 132 144 156 160 164 175 176 191 196 208 223 225 228 240 299 304 352 411 432 499 I/O XC7236A 36 XC7272A 72 XC7318 38 36 56 72 38 XC7336
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XC7236A
XC7272A
XC7318
XC7336
XC7336Q
XC7354
XC7372
XC73108
XC73144
XC9536
PCB footprint cqfp 132
schematic impulse sealer
xc4010e-pq208
footprint pga 84
TSOP 54 PIN footprint 14mm x 20 mm
.65mm bga land pattern
QFP PACKAGE thermal resistance die down
XC4013E-PQ240
XC7272A
XC7318
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BC846-40
Abstract: bc846 363 bc846 SOT363 bc848 to-92 TRANSISTOR SC-59 marking 1F
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 NPN Silicon BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru 1 BASE BC850BLT1,CLT1 2 EMITTER BC846, BC847 and BC848 are Motorola Preferred Devices MAXIMUM RATINGS Symbol BC846 BC847 BC850
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BC846ALT1
BC847ALT1,
BC850BLT1
BC846,
BC847
BC848
BC846
BC850
BC846-40
bc846 363
bc846 SOT363
bc848 to-92 TRANSISTOR
SC-59 marking 1F
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BC848 SOT 223 MARKING 1K
Abstract: BC847
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
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323/SC
BC846AWT1
BC847AWT1
BC848AWT1
BC846
BC847
BC848
BC848 SOT 223 MARKING 1K
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BC237
Abstract: Transistor BC107 PLASTIC PACKAGE BF245
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage
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MPQ3467
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
BC237
Transistor BC107 PLASTIC PACKAGE
BF245
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2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3442XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n2222 h 331 transistors
2n2222 -331 transistors
2n2222 331 transistors
BC237
2n2222 h 331
MARKING CODE diode sod123 W1
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: MARKING CODE diode sod123 W1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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MGSF3441XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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BC237
Abstract: 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode 3 CATHODE BAS21LT1 Motorola Preferred Device 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Symbol
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BAS21LT1
236AB)
C218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2N5670 equivalent
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. P–CHANNEL ENHANCEMENT–MODE
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MGSF1P02LT1
ENHANCEME218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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BC237
Abstract: 2N7000 Fet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR
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2N7000
226AA)
f218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2N7000 Fet
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BC237
Abstract: marking code N9 8-pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90
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416/SC
DAN222
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
marking code N9 8-pin
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2n5462 replacement
Abstract: motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 2N5461 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C
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2N5460
2N5461
2N5462
226AA)
V218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2n5462 replacement
motorola JFET 2N3819
bf245 equivalent
transistor equivalent 2n5551
2N5461 replacement
transistor equivalent book 2N5401
BC237
EQUIVALENT TRANSISTOR bc109c
2N2222, 2N2222A
J-FET 2N3819
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mpsa16
Abstract: motorola transistor 2N2907 BC237 motorola transistor dpak marking 350
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPSA17 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Emitter – Base Voltage VEBO 15 Vdc Collector Current – Continuous
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MPSA17
226AA)
E218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
mpsa16
motorola transistor 2N2907
BC237
motorola transistor dpak marking 350
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MPS918 equivalent
Abstract: BC237 MPS3563 transistor MPS3563
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage VCEO 15 12 Vdc Collector – Base Voltage
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MPS918*
MPS3563
MPS918
MPS3563
226AA)
Resist218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MPS918 equivalent
BC237
MPS3563 transistor
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54ALT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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BAT54ALT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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BC237
Abstract: BC108 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA96T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 450 Vdc Collector–Base Voltage VCBO – 450 Vdc Emitter–Base Voltage
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PZTA96T1
261AA
ZTA96
ELE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
BC108 transistor
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