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    EIA-481-1A TSOP Search Results

    EIA-481-1A TSOP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ECASD61C107M012KA0 Murata Manufacturing Co Ltd 7343 (7343M)/100μF±20%/16Vdc/12mOhm Visit Murata Manufacturing Co Ltd
    ECASD61A157M010KA0 Murata Manufacturing Co Ltd 7343 (7343M)/150μF±20%/10Vdc/10mOhm Visit Murata Manufacturing Co Ltd
    1206USB-262MBB Coilcraft Inc Data Line Filter, 2 Function(s), EIA STD PACKAGE SIZE 1206 Visit Coilcraft Inc Buy
    1206USB-872MBB Coilcraft Inc Data Line Filter, 2 Function(s), EIA STD PACKAGE SIZE 1206 Visit Coilcraft Inc Buy
    1206USB-102MBC Coilcraft Inc Data Line Filter, 2 Function(s), EIA STD PACKAGE SIZE 1206 Visit Coilcraft Inc Buy

    EIA-481-1A TSOP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UAF3000

    Abstract: No abstract text available
    Text: Union Semiconductor, Inc. UM5204 http://www.union-ic.com Quad Channel Low Capacitance ESD Protection Diode Array General Description UM5204 are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from


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    UM5204 UM5204 SC-70-6 SC-89-6 UAF3000 PDF

    PCB footprint cqfp 132

    Abstract: schematic impulse sealer xc4010e-pq208 footprint pga 84 TSOP 54 PIN footprint 14mm x 20 mm .65mm bga land pattern QFP PACKAGE thermal resistance die down XC4013E-PQ240 XC7272A XC7318
    Text: Packages and Thermal Characteristics  August 6, 1996 Version 1.2 Number of Available I/O Pins Max 44 64 68 84 100 120 132 144 156 160 164 175 176 191 196 208 223 225 228 240 299 304 352 411 432 499 I/O XC7236A 36 XC7272A 72 XC7318 38 36 56 72 38 XC7336


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    XC7236A XC7272A XC7318 XC7336 XC7336Q XC7354 XC7372 XC73108 XC73144 XC9536 PCB footprint cqfp 132 schematic impulse sealer xc4010e-pq208 footprint pga 84 TSOP 54 PIN footprint 14mm x 20 mm .65mm bga land pattern QFP PACKAGE thermal resistance die down XC4013E-PQ240 XC7272A XC7318 PDF

    BC846-40

    Abstract: bc846 363 bc846 SOT363 bc848 to-92 TRANSISTOR SC-59 marking 1F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 NPN Silicon BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru 1 BASE BC850BLT1,CLT1 2 EMITTER BC846, BC847 and BC848 are Motorola Preferred Devices MAXIMUM RATINGS Symbol BC846 BC847 BC850


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    BC846ALT1 BC847ALT1, BC850BLT1 BC846, BC847 BC848 BC846 BC850 BC846-40 bc846 363 bc846 SOT363 bc848 to-92 TRANSISTOR SC-59 marking 1F PDF

    BC848 SOT 223 MARKING 1K

    Abstract: BC847
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.


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    323/SC BC846AWT1 BC847AWT1 BC848AWT1 BC846 BC847 BC848 BC848 SOT 223 MARKING 1K PDF

    BC237

    Abstract: Transistor BC107 PLASTIC PACKAGE BF245
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


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    MPQ3467 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 Transistor BC107 PLASTIC PACKAGE BF245 PDF

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72 PDF

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


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    MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


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    MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 PDF

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


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    MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346 PDF

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor PDF

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA PDF

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 PDF

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 PDF

    MAD130P

    Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    MMAD1108 De218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MAD130P 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72 PDF

    BC237

    Abstract: 2N5670 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode 3 CATHODE BAS21LT1 Motorola Preferred Device 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Symbol


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    BAS21LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N5670 equivalent PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. P–CHANNEL ENHANCEMENT–MODE


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    MGSF1P02LT1 ENHANCEME218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 PDF

    BC237

    Abstract: 2N7000 Fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


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    2N7000 226AA) f218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N7000 Fet PDF

    BC237

    Abstract: marking code N9 8-pin
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90


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    416/SC DAN222 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 marking code N9 8-pin PDF

    2n5462 replacement

    Abstract: motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 2N5461 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C


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    2N5460 2N5461 2N5462 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n5462 replacement motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819 PDF

    mpsa16

    Abstract: motorola transistor 2N2907 BC237 motorola transistor dpak marking 350
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPSA17 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Emitter – Base Voltage VEBO 15 Vdc Collector Current – Continuous


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    MPSA17 226AA) E218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 mpsa16 motorola transistor 2N2907 BC237 motorola transistor dpak marking 350 PDF

    MPS918 equivalent

    Abstract: BC237 MPS3563 transistor MPS3563
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors MPS918* MPS3563 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPS918 MPS3563 Unit Collector – Emitter Voltage VCEO 15 12 Vdc Collector – Base Voltage


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    MPS918* MPS3563 MPS918 MPS3563 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 MPS918 equivalent BC237 MPS3563 transistor PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54ALT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


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    BAT54ALT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 PDF

    BC237

    Abstract: BC108 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA96T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 450 Vdc Collector–Base Voltage VCBO – 450 Vdc Emitter–Base Voltage


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    PZTA96T1 261AA ZTA96 ELE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 BC108 transistor PDF