EGN21C105I2D Search Results
EGN21C105I2D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency |
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EGN21C105I2D 14GHz 14GHz 25deg /-10MHz 45dBm | |
B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
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14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C | |
EKZE101
Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
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EGN21C105I2D 14GHz 14GHz /-10MHz 45dBm EKZE101 GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001 |