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    EEV TRIODE BW1176J2 IN SIDE MATERIAL Search Results

    EEV TRIODE BW1176J2 IN SIDE MATERIAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD2017FN Toshiba Electronic Devices & Storage Corporation Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD2015FN Toshiba Electronic Devices & Storage Corporation Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    74F433SPC Rochester Electronics LLC 74F433 - FIFO Visit Rochester Electronics LLC Buy

    EEV TRIODE BW1176J2 IN SIDE MATERIAL Datasheets Context Search

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    English Electric Valve

    Abstract: English Electric Valve company ltd BW1121J2 B1153 Br1161 BW1121 BW1176J2 steam CONDENSER CP 1005 TRIODE ftl8
    Text: ENGLISH ELECTRIC VALVE CO LTD Product Data T riodes POWER T R IO D E S G E N E R A L SEC TIO N M E D IU M POWER T R IO D E S H IG H POWER T R IO D E S POWER T R IO D E ACCESSORIES = The Valve Data Book comprises ten bound volumes, made up as follows: • IGNITRONS


    OCR Scan     		BY4093 English Electric Valve English Electric Valve company ltd BW1121J2 B1153 Br1161 BW1121 BW1176J2 steam CONDENSER CP 1005 TRIODE ftl8 PDF