X45620V20
Abstract: X45620V20I
Text: New Features Dual Supervisor Batt Switch & Output 256K EEPROM Dual Voltage Monitor with Integrated System Battery Switch and EEPROM X45620 • Minimize EEPROM programming time —64 byte page write mode —Self-timed write cycle —5ms write cycle time typical
|
Original
|
X45620
400kHz
20-lead
256Kbits
X45620V20
X45620V20I
|
PDF
|
24lc018
Abstract: 24LC01 24C01A 24C02A 24C04A 24CXX 24LC02 24LC04 24LCXX AN559
Text: M AN559 Optimizing Serial Bus Operations with Proper Write Cycle Times Author: Lenny French Microchip Technology Inc. SERIAL EEPROM WRITE TIME REQUIREMENTS Elements of the Write Cycle Time The total write operation time for a Serial EEPROM is determined by three main elements:
|
Original
|
AN559
24lc018
24LC01
24C01A
24C02A
24C04A
24CXX
24LC02
24LC04
24LCXX
AN559
|
PDF
|
v2045
Abstract: 10-15V X55620
Text: Preliminary Information X55620 256K Dual Voltage Monitor with Integrated System Battery Switch and EEPROM FEATURES • Minimize EEPROM programming time —64 byte page write mode —Self-timed write cycle —5ms write cycle time typical • 10MHz SPI interface modes (0,0 & 1,1)
|
Original
|
X55620
10MHz
20-lead
v2045
10-15V
X55620
|
PDF
|
V2045A
Abstract: 10-15V X55060
Text: Preliminary Information X55060 64K Dual Voltage Monitor with Integrated System Battery Switch and EEPROM FEATURES • Minimize EEPROM programming time —64 byte page write mode —Self-timed write cycle —5ms write cycle time typical • 10MHz SPI interface modes (0,0 & 1,1)
|
Original
|
X55060
10MHz
20-lead
V2045A
10-15V
X55060
|
PDF
|
24lc018
Abstract: 24LC04 93CXX 24C01* serial eeprom 24C01A 24C02A 24C04A 24CXX 24LC01 24LC02
Text: Minimizing Serial Bus Communication Time AN559 Optimizing Serial Bus Operations with Proper Write Cycle Times SERIAL EEPROM WRITE TIME REQUIREMENTS • Write timer worse case indicates the time the part is in the internally controlled write cycle allowing for
|
Original
|
AN559
24lc018
24LC04
93CXX
24C01* serial eeprom
24C01A
24C02A
24C04A
24CXX
24LC01
24LC02
|
PDF
|
M28010
Abstract: PDIP32 PLCC32 TSOP32
Text: M28010 1Mbit 128Kb x8 Parallel EEPROM with Software Data Protection DATA BRIEFING FAST ACCESS TIME: 100ns 2.7V to 3.6V SINGLE SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 128 Bytes Page Write Operation – Byte or Page Write Cycle ENHANCED END of WRITE DETECTION:
|
Original
|
M28010
128Kb
100ns
M28010
PDIP32
PLCC32
TSOP32
PDIP32
PLCC32
TSOP32
|
PDF
|
M28C64
Abstract: PDIP28 PLCC32
Text: M28C64 PARALLEL 64K 8K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:
|
Original
|
M28C64
M28C64)
PDIP28
PLCC32
TSOP28
M28C64
PDIP28
PLCC32
|
PDF
|
M28LV16
Abstract: PDIP28 PLCC32
Text: M28LV17 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:
|
Original
|
M28LV17
200ns
M28LV17
M28LV16
PDIP28
PLCC32
|
PDF
|
10-15V
Abstract: X55060
Text: X55060 64K Data Sheet PRELIMINARY March 28, 2005 Dual Voltage Monitor with Integrated System Battery Switch and EEPROM FN8133.0 —In circuit programmable ROM mode • Minimize EEPROM programming time —64 byte page write mode —Self-timed write cycle
|
Original
|
X55060
FN8133
10MHz
20-lead
10-15V
X55060
|
PDF
|
M28C16A
Abstract: M28LV16 PDIP24 PLCC32 SO24
Text: M28LV16 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max
|
Original
|
M28LV16
200ns
M28LV16
M28C16A
PLCC32
PDIP24
TSOP28
M28C16A
PDIP24
PLCC32
SO24
|
PDF
|
M28C16A
Abstract: M28C17A PDIP28 PLCC32
Text: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM DATA BRIEFING FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output
|
Original
|
M28C16A
M28C17A
150ns
M28C16A
M28C17A
AI02113
M28C16A,
M28C16
PDIP28
PDIP28
PLCC32
|
PDF
|
FT28HC256-12
Abstract: 12LMB FT28HC256-12FMB-AT FT28HC256
Text: FT28HC256 EEPROM 256K 32Kx8 Features • Fast Read Access Time – 70 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum
|
Original
|
32Kx8)
64-byte
FT28HC256
FT28HC256-12
12LMB
FT28HC256-12FMB-AT
FT28HC256
|
PDF
|
M28C64C
Abstract: M28C64X PDIP28 PLCC32
Text: M28C64C M28C64X PARALLEL ACCESS 64K 8K x 8 EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION – Active Current 30mA – Standby Current 100µA FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms
|
Original
|
M28C64C
M28C64X
150ns
M28C64C
M28C64X
PDIP28
PLCC32
|
PDF
|
WE512K16-XG4X
Abstract: No abstract text available
Text: WE512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES • Access Time of 120, 150, 200ns ■ Automatic Page Write Operation ■ Packaging: ■ Page Write Cycle Time: 10ms Max ■ Data Polling for End of Write Detection • 68 lead, 40mm Hermetic CQFP Package 501
|
Original
|
WE512K16-XG4X
512Kx16
200ns
128Kx16
512K16
MIL-STD-883
WE512K16-XG4X
|
PDF
|
|
WE512K16-XG4X
Abstract: No abstract text available
Text: White Electronic Designs WE512K16-XG4X 512Kx16 CMOS EEPROM MODULE FEATURES Access Time of 140, 150, 200ns Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection • 68 lead, 40mm Hermetic CQFP Package 501 Hardware and Software Data Protection
|
Original
|
WE512K16-XG4X
512Kx16
200ns
128Kx16
512K16
MIL-STD-883
WE512K16-XG4X
|
PDF
|
WE128K32-XXX
Abstract: WE128K32-XG1TX WE128K32-XG1UX WE128K32-XG2UX WE128K32-XH1X
Text: White Electronic Designs WE128K32-XXX 128Kx32 EEPROM MODULE, SMD 5962-94585 FEATURES • ■ ■ ■ ■ ■ ■ ■ Low Power CMOS Automatic Page Write Operation Page Write Cycle Time: 10ms Max Data Polling for End of Write Detection Hardware and Software Data Protection
|
Original
|
WE128K32-XXX
128Kx32
WE128K32-XG2UX
WE128K32-XG1UX
WE128K32-XG1TX1
WE128K32-XH1X
300ns
66-pin,
02HMX
200ns
WE128K32-XXX
WE128K32-XG1TX
|
PDF
|
2kx8 eeprom
Abstract: No abstract text available
Text: FT28C16 Parallel EEPROM 16K 2Kx8 Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • –Internal Address and Data Latches –Internal Control Timer –Automatic Clear Before Write
|
Original
|
FT28C16
FT28C16
2kx8 eeprom
|
PDF
|
2kx8 rom
Abstract: FT28C16 MIL-STD-883-M5004 FT28C16E 2kx8 EEPROM atmel
Text: FT28C16 Parallel EEPROM 16K 2Kx8 Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • –Internal Address and Data Latches –Internal Control Timer –Automatic Clear Before Write
|
Original
|
FT28C16
FT28C16
2kx8 rom
MIL-STD-883-M5004 FT28C16E
2kx8 EEPROM atmel
|
PDF
|
RL 66 EEPROM
Abstract: transistor equivalent book FOR D 1047 d 1047 24FC65 AEC-Q100 CAT24FC65 CAT24FC66 2803a
Text: H CAT24FC65, CAT24FC66 64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection LE FEATURES • Fast mode I2C bus compatible* ■ 5 ms max write cycle time ■ Max clock frequency: ■ Write protect feature - 400KHz for VCC=2.5V to 5.5V EE GEN FR
|
Original
|
CAT24FC65,
CAT24FC66
64K-Bit
400KHz
CAT24FC65)
CAT24FC66)
64-byte
RL 66 EEPROM
transistor equivalent book FOR D 1047
d 1047
24FC65
AEC-Q100
CAT24FC65
CAT24FC66
2803a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CAT24FC65, CAT24FC66 64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection FEATURES • Fast mode I2C bus compatible* ■ 5 ms max write cycle time ■ Max clock frequency: ■ Write protect feature - 400KHz for VCC=2.5V to 5.5V ■ Schmitt trigger filtered inputs for
|
Original
|
CAT24FC65,
CAT24FC66
64K-Bit
400KHz
64-byte
CAT24FC65)
CAT24FC66)
CAT24FC65/66
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON raDwunnteinMiiiiiDei M28LV17 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 200ns ■ SINGLE LOW VOLTAGE OPERATION ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max
|
OCR Scan
|
M28LV17
200ns
PDIP28
PLCC32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M28C64C M28C64X 64 Kbit 8Kb x8 Parallel EEPROM • FAST ACCESS TIME: 150ns ■ SINGLE 5 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION & ■ FAST WRITE CYCLE - 32 Bytes Page Write Operation - Byte or Page Write Cycle: 5ms ■ ENHANCED END OF W RITE DETECTION
|
OCR Scan
|
M28C64C
M28C64X
150ns
M28C64C
PDIP28
PLCC32
TSOP28
|
PDF
|
Untitled
Abstract: No abstract text available
Text: rZ T SGS-THOMSON ^ 7 # . raDwunnteinMiiiiiDei M28C16A M28C17a 16K 2K x 8 PARALLEL EEPROM • > > ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE - 32 Bytes Page Write Operation - Byte or Page Write Cycle: 5ms
|
OCR Scan
|
M28C16A
M28C17a
150ns
M28C16A
M28C17A
TSOP28
|
PDF
|
10KW
Abstract: 85C72 85C82 85C92 S5C82
Text: M i c r o c h 85C72/82/92 i p 1K/2K/4K 5.0V CMOS Serial EEPROM PACKAGETYPE Low power CMOS technology Two wire serial interface bus, l2C compatible 5 volt only operation Self-timed write cycle including auto-erase Page-write buffer 1ms write cycle time for single byte
|
OCR Scan
|
85C72/82/92
85C72
85C82
85C92
128x8
256x8
2x256x8
DS11182B-page
blD3501
10KW
S5C82
|
PDF
|