EEPROM 28C65 Search Results

eeprom 2816

Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Contextual Info: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel

Contextual Info: CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.

CAT28C65

Abstract: 1N914 28C65B CAT28C65B
Contextual Info: CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.

Contextual Info: CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.

28C65b

Abstract: CAT28C65B 1N914 CAT28C65BNI-15T
Contextual Info: CAT28C65B CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.

CAT28C65B

Abstract: eeprom catalyst 1N914 28C65B CAT28C65BNI-15T
Contextual Info: CAT28C65B H EE GEN FR ALO CAT28C65B 64K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation:

CAT28C65B

Contextual Info: CAT28C65B H EE GEN FR ALO CAT28C65B 64K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation:

28C65B

Abstract: CAT28C65B 1N914 CAT28C65BNI-15T
Contextual Info: CAT28C65B H EE GEN FR ALO CAT28C65B 64K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation:

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7T L414E G G lb ö f lO TSS CMOS EEPROM KM28C64A/KM28C65A 8K x8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64A/65A: Commercial — KM28C64AI/65AI: Industrial • Simple Byte Write & Page Write

Contextual Info: E/M28C65 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • SEEQ's E/M28C65 is a CMOS 5V only, 8 K x 8 Electrically Erasable Programmable Read Only Memory EEPROM . It is manufactured using SEEQ's advanced 1.25 micron CMOS Process and is available in a 28 pin Cerdip package

KM28C64A20

Abstract: KM28C64A-20
Contextual Info: KM28C64A/KM28C65A CMOS EEPROM 8 K /8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal

64x16

Abstract: 8DIP 28-DIP KM28C64B 128X16
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.5 EEPROM 2 K b it 64K bit Remark 16x16 1MHz CMOS Ext.-timed 8DIP/8SOP Now 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46/G/GD/I 64x16 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46V/VG/VGD/I 64x16 250KHZ CMOS 3-OV-Operation 8DIP/8SOP Now

Contextual Info: KM28C64A/KM28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal

Contextual Info: 2231 CALLE DE LUNA, SANTA CLARA, CA 95054 Telephone: 408 748-7700 CAT28C65A 8K x 8 BIT CMOS EEPROM DESCRIPTION FEATURES T h e C A T 2 8C 6 5A is a fast, low power, 5V-only C M O S E E P R O M requiring a simple interface for insystem programming. On-chip address and data

Device-List

Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: 28C65 Technology, Incorporated Timer E2 64K Electrically Erasable PROM August 1992 Features • Military, Extended and Commercial Temperature Range • -5 5 ° Cto +125° C Operation Military • -4 0 ° C to +85° C Operation (Extended) • 0° C to +70° C Operation (Commercial)

eeprom 28c65

Abstract: 28C65-250 28C65 28C65 seeq
Contextual Info: 28C65 Technology, Incorporated Timer E2 64K Electrically Erasable PROM August 1992 Features Military, Extended and Commercial Temperature Range • - 5 5 ° C to +125° C Operation Military • - 4 0 ° C t o +85° C Operation (Extended) • 0° C to +70° C Operation (Commercial)

28C65

Abstract: 28C65 seeq eeprom 28c65
Contextual Info: 28C65 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • SO mA Active • 150 IxA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time ■ Byte Write Mode ■ Write Cycle Completion Indication

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

28C65 seeq

Abstract: M28C65 A6A12
Contextual Info: E/M28C65 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • Military and Extended Temperature Range • - 5 5 ° C to + 125° C Operation Military . _ 40° C to + 85° C Operation (Extended) ■ ■ CMOS Technology Low Power • 60 mA Active

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

28C65

Abstract: eeprom 28c65 28C65-25 28C64 EEPROM WE VQE 11 E WE VQE 23 F WE VQE 23 E WE VQE 24 E 28c64 ram MBM28C65-25
Contextual Info: FU JITSU CMOS 65536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE ROM MBM28C65-25 MBM 28C65-35 S e p te m b e r 1 9 8 7 E d itio n 2 .0 CMOS 8192 x 8 EL E C T R IC A L LY ERASABLE PROGRAM M ABLE READ O N L Y M EM O RY The Fujitsu MBM 28C65 is a high speed 65,536 bits CMOS e lectrically erasable

Contextual Info: 28C65 Timer E2 64K Electrically Erasable PR O M October 1989 Features Description • C M O S Technology ■ Lo w P ow er SEEO's 28C65 is a CMOS 5V only, 8K x 8 Electrically Erasable Programmable Read Only Memory EEPHOM . It is manufactured using SEEQ’s advanced 1.25 micron