EEPROM 16MB Search Results

NROM16EE

Contextual Info: NROM16EE SAIFUN PROPRIETARY 16Mbit 2M x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM16EE is a 16Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is

M25PE16

Abstract: M25PXX SO8 Wide Package SO8W STMicroelectronics date code PDIP8 TSSOP8 Package 160 SPI STM pdip8 SO8 package SO8 WIDE
Contextual Info: Serial EEPROM, Serial Flash and Application Specific Serial Non-Volatile Memories www.st.com/eeprom www.st.com/serialflash Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Serial Serial EEPROM, EEPROM, Serial Serial Flash Flash and

Hitachi 1024k*8 SRAM

Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
Contextual Info: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8

93CS56

Abstract: 10B5 9060ES 9060SD 93C06 NM93CS06 NM93CS46 FF000000
Contextual Info: EEPROM Load Instructions for PCI 9060, PCI 9060ES, PCI 9060SD July 11, 1996 These Instructions apply to the PCI 9060, 9060ES and 9060SD SHORT EEPROM LOAD The following registers are loaded from EEPROM after reset is de-asserted if the SHORT# pin is low. The bits are organized such that the most significant bit of each 32-bit word is stored first in EEPROM. The first

EEPROM 16Mb

Abstract: M25PXX SO8w footprint M34A02 M34C00 M34C02 M34D64 TSSOP14 1mb eeprom hdd eeprom
Contextual Info: Serial Flash, Serial EEPROM and Application Specific Standard Products for Computer Applications www.st.com/serialflash www.st.com/eeprom STM i c r o e l e c t r o n i c s More Intelligent Solutions Serial Flash, Serial EEPROM and ASSP for Computer Applications

93CS56

Abstract: EEPROM E 32.0000 C 9060SD 93C06 NM93CS06 NM93CS46 10B5 9060ES 93CS56 14 pin
Contextual Info: Go to next Section: Programming Flowchart Return to Table of Contents EEPROM Load Instructions for PCI 9060, PCI 9060ES, PCI 9060SD July 11, 1996 These Instructions apply to the PCI 9060, 9060ES and 9060SD SHORT EEPROM LOAD The following registers are loaded from EEPROM after reset is de-asserted if the SHORT# pin is low.

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816ADC PRELIMINARY 16Mbit 2M X 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as

S016W

Abstract: stmicroelectronics eeprom M25P05-A m93c46 M24C64-W M95010 M95010-W M95020 bare die M24C02-W
Contextual Info: Serial EEPROM and Serial Flash for automotive applications ORDER CODE: SGSERAUT/0504 Selection guide STMicroelectronics - August 2004 - Printed in Italy - All rights reserved www.st.com/eeprom www.st.com/serialflash For selected STMicroelectronics sales offices fax:

USIM

Abstract: multi sim cards AE45C1 AE46C
Contextual Info: AE46C and AE45C1 High Security 16-bit Smart Card Microcontroller Features AE46C AE45C1 68kbytes EEPROM; 196kbytes ROM; 6.5Kbyte RAM 36kbytes EEPROM; 196kbytes ROM; 6.5Kbyte RAM Integrated Security Concept ISC Applications The AE46C and AE45C1 designed under Renesas

AE45C1

Abstract: AE46C
Contextual Info: AE46C and AE45C1 High Security 16-bit Smart Card Microcontroller Features AE46C AE45C1 68Kbytes EEPROM; 196Kbytes ROM; 6.5Kbytes RAM 36Kbytes EEPROM; 196Kbytes ROM; 6.5Kbytes RAM Integrated Security Concept ISC Applications The AE46C and AE45C1 designed under Renesas

Sim card diagram

Abstract: AE450 AE460 gsm sim
Contextual Info: AE460 and AE450 High Security 16-bit Smart Card Microcontroller Features AE460 AE450 64.5Kbytes EEPROM; 96Kbytes ROM; 3Kbytes RAM 32.5Kbytes EEPROM; 128Kbytes ROM; 4Kbytes RAM Integrated Security Concept ISC The AE460 and AE450 are designed for high security

renesas sim

Abstract: Sim card diagram AE450 AE460 sim card chip sim cards RENESAS AE4
Contextual Info: AE460 and AE450 High Security 16-bit Smart Card Microcontroller Features AE460 AE450 64.5kbytes EEPROM; 96kbytes ROM; 3Kbyte RAM 32.5kbytes EEPROM; 128kbytes ROM; 4Kbyte RAM Integrated Security Concept ISC The AE460 and AE450 are designed for high security

sim card chips

Abstract: AE450 cmos cots radiation gsm module with microcontroller AE460 sim cards Hitachi DSA0071
Contextual Info: AE460 and AE450 High Security 16-bit Smart Card Microcontroller Features AE460 AE450 64.5kbytes EEPROM; 96kbytes ROM; 3kbytes RAM 32.5kbytes EEPROM; 128kbytes ROM; 4kbytes RAM Integrated Security Concept ISC Applications The AE460 and AE450 are designed for high security

PIC16F877

Abstract: 24L256 DV164002 24l256 serial eeprom LCD using pic16f877 16 X 2 lcd PIC16F877 rs232 PIC16F877 circuits DM163004 PIC18C452
Contextual Info: PICDEM.net Internet/Ethernet Demonstration Board DM163004 Features: • User friendly TCP/IP stack • Web server with HTML • 24L256 Serial EEPROM • Firmware for Xmodem to download web pages into Serial EEPROM • ICSP™/ICD interface connector •

TC5816AFT

Contextual Info: TOSHIBA TC 5816A D C 16Mbit 2M X 8 BIT CMOS NAND EEPROM PRELIMINARY Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programma­ ble Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a

MX29L1611

Contextual Info: Introduction PRELIMINARY MX29L1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 3.3V ± 10% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast random access time: 100ns Fast pagemode access time: 50ns

MX29F1610

Abstract: 29F1610-12 00F1H
Contextual Info: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture

Contextual Info: ADVANCED INFORMATION MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

vhdl code for DES algorithm

Abstract: AES-128 ST22 ST22N256 vhdl AES 512 algorithm vhdl code for AES algorithm vhdl code 16 bit processor
Contextual Info: ST22N256 Smartcard 32-Bit RISC MCU with 256 Kbytes EEPROM Javacard HW Execution & Cryptographic Library DATA BRIEF PRODUCT FEATURES 32-BIT RISC CPU WITH 24-BIT LINEAR MEMORY ADDRESSING • 368 KBYTES USER ROM ■ 16 KBYTES USER RAM ■ 256K KBYTES USER EEPROM

29f1615

Abstract: MX29f1615 29f1615-10
Contextual Info: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

29F1615

Abstract: mx29f1615
Contextual Info: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

29f1615

Abstract: MX29f1615
Contextual Info: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

TC5816AFT

Abstract: toshiba NAND ID code d33 02C
Contextual Info: TOSHIBA TC 5816A FT PRELIMINARY 16Mbit 2M x 8 BIT CMOS NAND EEPROM Description The TC 5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a 264 byte static register

MX29F1610A

Abstract: MX29F1610B PM05
Contextual Info: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture