Untitled
Abstract: No abstract text available
Text: Photomicrosensor EE-SG3/EE-SG3-B Transmissive Dimensions Note: Features • • • All units are in millimeters unless otherwise indicated. 13 19±0.1 25.4±0.2 Two, 3.2 dia. holes Dust-proof model. Solder terminal model (EE-SG3). PCB terminal model (EE-SG3-B).
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EE-SG3
Abstract: omron e-50
Text: Photomicrosensor EE-SG3/EE-SG3-B Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. • Dust-proof model with a 3.6 mm wide slot. • Solder terminal model (EE-SG3). • PCB terminal model (EE-SG3-B). 13 19±0.1
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Untitled
Abstract: No abstract text available
Text: r n 4 3 THI S DRAWING IS UNPUBLISHED. DIFFUSION RESEINTE AMP R COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 3 ,19 LOC ALL RIGHTS RESERVED. TOUS DROITS RESERVES. F DIST 7 REVISIONS p SECTION EE COUPE EE LTR REV DESCRIPTION MODIFICATIONS DATE
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27-5EP-00
27-5EP-0D
t14-15050
12-OCT-OD
27JUN96
29-5EP-00
er003918
/home/clep11302/er00391S/edmmod
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Untitled
Abstract: No abstract text available
Text: SD- 19 1 64 -00 2 MATERIAL NO. E N G IN EE RI N G NO. "S" REF . 146/3.7 1 . 173/4.39 . 19 8/ 5. 03 S B - 2 19-06 S B - 2 19-08 S B - 2 19- 10 19 1640 14 1 19 1640 142 19 164002 1 4 0 MAX „36 — MAX 9= ' NOTES: TERMINAL M ATERIAL:COPPER 2.\FINISH: ELECTRO
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SD-I9I64P
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qml-38535
Abstract: 54ACT163 CQCC1-N20 GDFP2-F16 GDIP1-T16 H30034 DIODE smd marking MO
Text: REVISIONS DESCRIPTION LTR DATE YR-MO -DA A P PR O V E D 98-04-20 Monica L. Poelking Add Radiation Hardness Assurance limits. Editorial changes throughout - jak. REV SH EE T REV A A A A A A A SH EE T 15 16 17 18 19 20 21 REV STATUS O F SH EE TS PM IC N/A
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EE-SG3
Abstract: EE-SG3 application forward convert
Text: Photomicrosensor Transmissive EE-SG3/EE-SG3-B • Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • • • • ■ Absolute Maximum Ratings (Ta = 25°C) 13 19±0.1 25.4±0.2 Two, 3.2±0.2 dia. holes Dust-proof model.
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X305-E-1
EE-SG3
EE-SG3 application
forward convert
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EE-SG3 application
Abstract: limiting
Text: Photomicrosensor Transmissive EE-SG3/EE-SG3-B • Dimensions ■ Features • • • • Note: All units are in millimeters unless otherwise indicated. ■ Absolute Maximum Ratings (Ta = 25°C) 13 19±0.1 25.4±0.2 Two, 3.2±0.2 dia. holes Dust-proof model.
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JB301-E3-01
EE-SG3 application
limiting
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labpro
Abstract: str 5717 pal 007a 617-2240 lm 4558 PAL 002a pal 010a PALCE29M16 PALCE29M16H PALCE29M16H-25
Text: ai 19*1 COM’L a Advanced Micro Devices PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic
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PALCE29M16H-25
24-Pin
02S73Ã
WCP-13M-6/91-
labpro
str 5717
pal 007a
617-2240
lm 4558
PAL 002a
pal 010a
PALCE29M16
PALCE29M16H
PALCE29M16H-25
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MIL-STD-750-2031-1
Abstract: EE-1001 EE-1006 EE-2002 OMRON EE-1001
Text: EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment H Built-in amplifier with NPN output H Models available with 5- to 12-VDC and 5H H H H H to 15-VDC input CMOS- and TTL-compatible 19-mm sensing distance EE-SB5V-E
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80-mA
12-VDC
15-VDC
19-mm
EE-1001/1006)
EE-2002
1-800-55-OMRON
MIL-STD-750-2031-1
EE-1001
EE-1006
EE-2002
OMRON EE-1001
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OMRON EE-1001
Abstract: EE-1001 EE-sb5v-e OMRON EE-1006 EE-1006 EE-2002 transistor A 1006
Text: EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E Photomicrosensor with 80-mA Switching Capacity that can be Built into Equipment H Built-in amplifier with NPN output H Models available with 5- to 12-VDC and 5H H H H H to 15-VDC input CMOS- and TTL-compatible 19-mm sensing distance EE-SB5V-E
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80-mA
12-VDC
15-VDC
19-mm
EE-1001/1006)
EE-2002
1-800-55-OMRON
OMRON EE-1001
EE-1001
EE-sb5v-e
OMRON EE-1006
EE-1006
EE-2002
transistor A 1006
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M28840/29CG1DAP1
Abstract: No abstract text available
Text: PLUG, 45°, ADAPTER ASSEMBLY M28840/19 NC19 HOW TO O RDER: G3.H T E C H N O L O G Y P/N: M ILITA R Y P/N: NC19 A 25 1 P 1 M 28840/19 A G 1 P 1 B ASIC PART N U M B E R — 1 CLA SS C O D E S ee Page 3 SH E L L SIZE (S ee Below) —j MILITARY' CONNECTOR PLUGNUMBER
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M28840/19
M28840/16
M28840/3A*
M28840/3Eâ
28840/19Tâ
M2884G/16
M28840/3F'
M28840/19
M28840/3G*
M28840/29CG1DAP1
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IGBT S 1377
Abstract: Upi 0108 PM50RSK060 600 watts inverter circuit diagram 300 volt 5 ampere transistor dc to three phase inverter ic wn 537 a
Text: PM50RSK060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/600 Volts EE DD THICK TYPICAL 19 PLACES A B J U 123 4 D N N N 5678 9 11 13 15 17 19 10 12
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PM50RSK060
Amperes/600
IGBT S 1377
Upi 0108
PM50RSK060
600 watts inverter circuit diagram
300 volt 5 ampere transistor
dc to three phase inverter ic
wn 537 a
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114810
Abstract: No abstract text available
Text: Bestueckungsplan - contact layout 19 1 m- bestueckt- assemUe 19 1 EE-Zo n e fuer durchkontaktierte Loecher 0 0.6 *o.os Compliant zone for thru hole 0 0 .6 *0 .0 5 shieldinp 3-0,4 TT ! T T i j i i t 11.4 Anforderungsstufe Datum Id -N r. 13.85 date abqefraest;
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obg-4-101
114810
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qml-38535
Abstract: No abstract text available
Text: in AM D REVISIONS DESCRIPTION DATE m-MO-QA APPROVED REV SH EE T SH EET R E V STATUS O F SH EETS 22 23 24 25 REV 10 SH EE T 16 12 19 17 20 21 PMIC N/A D EFEN SE ELECTR O NICS SU P P LY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE
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MIL-BUL-103.
5962-9169501MLX
5962-9169501M3X
PALCE610H-20/BLA
PALCE610H-20/B3A
qml-38535
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PBT GF20 AMP
Abstract: No abstract text available
Text: r n 4 THIS DRAWING IS UNPUBLISHED. DIFFUSION RE5TREINTE AMP P 2 3 RELEASED FOR PUBLICATION DIFFUSION PUBLIQUE ALL RIGHTS RESERVED. BY AMP INCORPORATED. TOUS DROITS RESERVES. COPYRIGHT 19 L0C ,19 F COUPE EE +C + 1 1 . 27 40„2-0„4 4 m o CO. 6 3 ) T Y P C26)
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7-APR-97
01-JUN-01
er003237/home/dept1302/er003237/eclmmod
17-APR-97
PBT GF20 AMP
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pbt-GF15
Abstract: mqs 6 AMP PBT-GF15 114-18659
Text: T HI S D R A W I N G IS UN PU BLI SHE D. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG COPYRIGHT 19- 3 6 8 BY AMP R E L E A S E D FOR P U B L I C A T I O N FREI FUE R V E R O E F F E N T L I C H U N G INCORP ORA TED . ^ E eE eE htE t ,19-. MA T ED WITH: P A S S E N D ZU:
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P8T-G515
P5T-GP15
PBT-G515
3F588
MA555TAB
pbt-GF15
mqs 6
AMP PBT-GF15
114-18659
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Untitled
Abstract: No abstract text available
Text: 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 19 6 5 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL 4 <3> PROJECTION 3 2 RIGHTS DI ST LOC 19 R E V I5 I 0 N 5 14 AD RESERVED. LTR ZONE DE5CR[PTION G DATE APPD S EE SHEET
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0S1B-0278-00
04SEP01
04-5EP-01
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Untitled
Abstract: No abstract text available
Text: XXXXXXX 2 ERNI 174118 EE Zone für durchkontaktierte 2 18 x 2 = 13,45 -0,1 15,4 Date Code 3 -0,1 Ident-Nr. Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 36 6x2= 1 19 z Ebene - Level 3 Ebene - Level 2 12 11.2 9.7 a 8.2 Ebene - Level 1 b 19
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D-73099
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Untitled
Abstract: No abstract text available
Text: ERNI 123693 EE Zone für durchkontaktierte Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 2 18 x 2 = 13,45 -0,1 15,4 Date Code 3 -0,1 Firmensignet XXXXXXX Ident-Nr. 2 4x2= 36 Level 3 Ebene - 1 19 Ebene - z a Level 2 Ebene - Level 1 b 19 c 11.2
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D-73099
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Untitled
Abstract: No abstract text available
Text: XXXXXXX 2 ERNI 223200 EE Zone für durchkontaktierte 2 18 x 2 = 13,45 -0,1 15,4 Date Code 3 -0,1 Ident-Nr. Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 36 6x2= 1 19 z Ebene - Level 3 Ebene - Level 2 12 11.2 9.7 a 8.2 Ebene - Level 1 b 19
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EE42 core
Abstract: EE and EF Core Specifications pc40EE25 Ee60 ferrite EE60 core PC40EF16-Z ee55 core EE40 core ee55/55/21 PC40EE13-Z
Text: Ferrite Cores EE, EF Series For Power Supply EE, EF Cores B Type EE8 EE10/11 EF12.6 EE13 EE16 SEE16 EF16 EE19 EE19/16 EE20/20/5 EF20 EE22 EE25/19 EF25 EE25.4 EE30 EE30/30/7 EF32 EE35 EE35/28B EE40 EE41/33C EE42/42/15 EE42/42/20 EE47/39 EE50 EE50.3/51/6 EE55/55/21
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EE10/11
SEE16
EE19/16
EE20/20/5
EE25/19
EE30/30/7
EE35/28B
EE41/33C
EE42/42/15
EE42/42/20
EE42 core
EE and EF Core Specifications
pc40EE25
Ee60 ferrite
EE60 core
PC40EF16-Z
ee55 core
EE40 core
ee55/55/21
PC40EE13-Z
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223210
Abstract: No abstract text available
Text: Date Code XXXXXXX 2 ERNI 223210 EE Zone für durchkontaktierte 2 18 x 2 = 13,45 -0,1 15,4 3 -0,1 Ident-Nr. Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 36 6x2= 1 19 z Ebene - Level 3 Ebene - Level 2 12 11.2 9.7 a 8.2 Ebene - Level 1 b 19
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ERMAB19
223210
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Untitled
Abstract: No abstract text available
Text: ERNI EE Zone für durchkontaktierte Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 853040 2 18 x 2 = 36 2 4x2= Level 3 Ebene - 1 19 13,45 -0,1 15,4 Date Code 3 -0,1 Firmensignet XXXXXXX Ident-Nr. Ebene - z a Level 2 Ebene - Level 1 b 19 c 11.2
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D-73099
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PDF
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Untitled
Abstract: No abstract text available
Text: ERNI EE Zone für durchkontaktierte Löcher ø0.6 ±0.05 compliant zone for thru hole ø 0.6±0.05 853040 2 18 x 2 = 36 2 4x2= Level 3 Ebene - 1 19 13,45 -0,1 15,4 Date Code 3 -0,1 Firmensignet XXXXXXX Ident-Nr. Ebene - z a Level 2 Ebene - Level 1 b 19 c 11.2
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D-73099
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