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    EE-16 6 Search Results

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    EE-16 6 Price and Stock

    Belden Inc SUOT-EE16H-12

    Power Transformers High Frequency Universal Off-Line Transformers EE16 9W 900uH 12/12V 4300mOhm
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    Mouser Electronics SUOT-EE16H-12 628
    • 1 $2.95
    • 10 $2.23
    • 100 $1.79
    • 1000 $1.6
    • 10000 $1.6
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    Belden Inc SUOT-EE16V-12

    Power Transformers High Frequency Universal Off-Line Transformers EE16 9W 900uH 12/12V 4300mOhm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SUOT-EE16V-12 627
    • 1 $3.09
    • 10 $2.37
    • 100 $1.87
    • 1000 $1.77
    • 10000 $1.66
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    Belden Inc SUOT-EE16V-5

    Power Transformers High Frequency Universal Off-Line Transformers EE16 9W 900uH 5/5V 4300mOhm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SUOT-EE16V-5 615
    • 1 $3.03
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    • 100 $1.79
    • 1000 $1.66
    • 10000 $1.64
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    Olimex A20-OLinuXino-LIME-e16Gs16M

    Single Board Computers
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    Mouser Electronics A20-OLinuXino-LIME-e16Gs16M
    • 1 $33.42
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    Olimex T2-OLinuXino-LIME-e16Gs16M-IND

    Single Board Computers Olimex A20-OLinuXino-LIME Open Source Hardware embedded ARM Linux Android computer with Allwinner Dual Core Cortex-A7 A20 512MB RAM and 100Mb Ethernet 16GB eMMC 16MB SPI Flash Industrial grade -40+85C
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    Mouser Electronics T2-OLinuXino-LIME-e16Gs16M-IND
    • 1 $55.08
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    EE-16 6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EE-166 Analog Devices ADSP-2106x EPROM Overlay Support with VisualDSP++ 2.0 Original PDF

    EE-16 6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTC 20K

    Abstract: CIRCUIT SCHEMATIC CAR ECU Analog devices branding codes monoflop
    Text: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L FEATURES Memory 96 kB Flash/EE memory, 6 kB SRAM 10k-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN 64 x 16-bit result FIFO for current and voltage ADC


    Original
    ADuC7032-8L 10k-cycle 20-year 16-bit 48-lead, MS-026-BBC 48-Lead ST-48) ADuC7032BSTZ-8L-RL EVAL-ADUC7032QSPZ1 NTC 20K CIRCUIT SCHEMATIC CAR ECU Analog devices branding codes monoflop PDF

    CIRCUIT SCHEMATIC CAR ECU

    Abstract: ARM7 pin configuration cars ecu automotive ecu manual car engine ecu car ecu
    Text: Integrated Precision Battery Sensor for Automotive System ADuC7032-8L FEATURES Memory 96 kB Flash/EE memory, 6 kB SRAM 10k-cycle Flash/EE endurance, 20-year Flash/EE retention In-circuit download via JTAG and LIN 64 x 16-bit result FIFO for current and voltage ADC


    Original
    ADuC7032-8L 10k-cycle 20-year 16-bit 48-lead, MS-026-BBC 48-Lead ST-48) ADuC7032BSTZ-8L-RL EVAL-ADUC7032QSPZ1 CIRCUIT SCHEMATIC CAR ECU ARM7 pin configuration cars ecu automotive ecu manual car engine ecu car ecu PDF

    Untitled

    Abstract: No abstract text available
    Text: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammabllity ■ 16 bidirectional user-programmable I/O logic


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    PALCE29M16H-25 24-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic


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    PALCE29M16H-25 24-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic


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    PALCE29MA16H-25 24-Pin PALCE29M A16H-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL COM’L: H-25 Lattice/Vantis PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic


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    PALCE29MA16H-25 24-Pin PALCE29M A16H-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL COM’L: H-25 PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic


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    PALCE29M16H-25 24-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL COM'L: H-25 il PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic need Aicro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic


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    PALCE29M16H-25 24-Pin PDF

    EE-SY410

    Abstract: EE-SY310
    Text: Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC


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    SY310 SY410 EE-SY310) EE-SY410) EE-SY410 EE-SY310 PDF

    Untitled

    Abstract: No abstract text available
    Text: COM’L: H-25 Advanced Micro Devices PALCE29M A16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic


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    PALCE29M A16H-25 24-Pin 02575Eb PDF

    pt 2358

    Abstract: No abstract text available
    Text: FINAL COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic


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    PALCE29MA16H-25 24-Pin pt 2358 PDF

    EE-SY410

    Abstract: EE-SY310
    Text: Back Opto–Switch EE–SY310 / EE–SY410 Reflective Incorporates a photo–IC chip with a built-in detector element and amplifier. Detector element has built-in temperature compensation circuit. Sensing distance 5mm. A wide supply voltage range: 4.5 to 16 VDC


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    SY310 SY410 EE-SY310) EE-SY410) EE-SY410 EE-SY310 PDF

    Untitled

    Abstract: No abstract text available
    Text: s i «»I COM’L PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allow s reprogrammability ■ 16 bidirectional user-programmable I/O logic


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    PALCE29M16H-25 24-Pin PDF

    qml-38535

    Abstract: 54ACT163 CQCC1-N20 GDFP2-F16 GDIP1-T16 H30034 DIODE smd marking MO
    Text: REVISIONS DESCRIPTION LTR DATE YR-MO -DA A P PR O V E D 98-04-20 Monica L. Poelking Add Radiation Hardness Assurance limits. Editorial changes throughout - jak. REV SH EE T REV A A A A A A A SH EE T 15 16 17 18 19 20 21 REV STATUS O F SH EE TS PM IC N/A


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    PDF

    2510T

    Abstract: EE-SX498 opto-switch EE-SX398 photo detector transistor photo transistor application SX498
    Text: Opto–Switch EE–SX398 / EE–SX498 Transmissive Incorporates a photo–IC chip with a built-in detector element and amplifier. Incorporates a detector element with a built-in temperature compensation circuit. A wide supply voltage range: 4.5 to 16 VDC Directly connects to C-MOS and TTL.


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    SX398 SX498 EE-SX398) EE-SX498) 2510T EE-SX498 opto-switch EE-SX398 photo detector transistor photo transistor application SX498 PDF

    Untitled

    Abstract: No abstract text available
    Text: CO M 'L: H-25 Advanced Micro Devices PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • H igh-perform ance sem icustom logic replacem ent; E lectrically Erasable EE technology allow s reprogram m ability ■ 16 bidirectional user-program m able I/O logic


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    PALCE29MA16H-25 24-Pin 0257S2b 0D35211 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • Max. propagation delay of 1300ps ■ I EE min. of -6 3 m A ■ Industry standard 100K ECL levels ■ Extended supply voltage option: V ee = -4 .2 V to -5 .5 V ■ Voltage and tem perature com pensation for improved noise immunity ■ 21S 2H The SY100S364 is a 16-input multiplexer designed for


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    1300ps F100K 24-pin 28-pin SY100S364 16-input SY100S364DC SY100S364FC SY100S364JC PDF

    Untitled

    Abstract: No abstract text available
    Text: COM’L PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh-perform ance sem icustom logic replacem ent; E lectrically Erasable EE tech nolog y allow s reprogram m ability ■ 16 bid ire ctio n a l user-program m able I/O logic


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    PALCE29MA16H-25 24-Pin PALCE29M A16H-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: COM’L a PALCE29MA16H-25 Advanced Micro Devices 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-perform ance sem icustom logic replacem ent; E lectrically Erasable EE tech nolog y allow s reprogram m ability ■ 16 bid ire ctio n a l user-program m able I/O logic


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    PALCE29MA16H-25 24-Pin PDF

    qml-38535

    Abstract: No abstract text available
    Text: in AM D REVISIONS DESCRIPTION DATE m-MO-QA APPROVED REV SH EE T SH EET R E V STATUS O F SH EETS 22 23 24 25 REV 10 SH EE T 16 12 19 17 20 21 PMIC N/A D EFEN SE ELECTR O NICS SU P P LY CENTER DAYTON, OHIO 45444 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE


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    MIL-BUL-103. 5962-9169501MLX 5962-9169501M3X PALCE610H-20/BLA PALCE610H-20/B3A qml-38535 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of


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    MC-4516CD646 16M-WORD 64-BIT MC-4516CD646 uPD4564841 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516CD647 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The M C -4 5 1 6 C D 6 4 7 is a 1 6 ,777 ,2 16 words by 64 bits synchronous dynamic RAM module on which 16 pieces of


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    MC-4516CD647 16M-WORD 64-BIT PD4564841 M14280EJ1V0DS00 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of


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    MC-454AD645 64-BIT MC-454AD645 uPD4516821 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of


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    MC-454AD645 64-BIT MC-454AD645 uPD4516821 M13348X) C-454AD645F, MC-454AD645FA] M168S-50A65-1 PDF