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    EE 16A TRANSFORMER Search Results

    EE 16A TRANSFORMER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TUSS4440TRTJT
    Texas Instruments Transformer drive ultrasonic sensor IC with logarithmic amplifier Visit Texas Instruments Buy
    PUCC12051DVEQ1
    Texas Instruments Automotive, 500-mW, 5-kVrms isolated DC/DC module with integrated transformer Visit Texas Instruments Buy
    UCC25800AQDGNQ1
    Texas Instruments Ultra-low EMI transformer driver for isolated bias supplies 8-HVSSOP -40 to 125 Visit Texas Instruments
    ISO3086TDWR
    Texas Instruments Isolated 485 Transceiver with integrated transformer driver 16-SOIC -40 to 85 Visit Texas Instruments Buy
    ISO1176TDW
    Texas Instruments Isolated ProfiBus Transceiver with integrated transformer driver 16-SOIC -40 to 85 Visit Texas Instruments Buy

    EE 16A TRANSFORMER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF540N

    Abstract: IRFP140N
    Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier


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    91343B IRFP140N O-247 IRF540N IRFP140N PDF

    IRF540NS

    Abstract: IRF540NSPBF AN-994 IRF540N IRF540NL IRL3103L EE 16A transformer MOSFET IRF540n
    Contextual Info: PD - 95130 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF540NSPbF IRF540NLPbF l HEXFET Power MOSFET l D RDS on = 44mΩ G Advanced HEXFET ® Power MOSFETs from


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    IRF540NSPbF IRF540NLPbF EIA-418. IRF540NS IRF540NSPBF AN-994 IRF540N IRF540NL IRL3103L EE 16A transformer MOSFET IRF540n PDF

    IRF540NS

    Contextual Info: PD - 95130 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF540NSPbF IRF540NLPbF l HEXFETÆ Power MOSFET l D RDS on = 44m! G Advanced HEXFET Æ Power MOSFETs from


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    IRF540NSPbF IRF540NLPbF EIA-418. IRF540NS PDF

    EE 16A transformer

    Abstract: IRF540NLPBF IRF540NL IRF540NS IRF540NSPBF AN-994 IRF540N IRL3103L 4.5v to 100v input regulator
    Contextual Info: PD - 95130 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF540NSPbF IRF540NLPbF l HEXFET Power MOSFET l D RDS on = 44mΩ G Advanced HEXFET ® Power MOSFETs from


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    IRF540NSPbF IRF540NLPbF EIA-418. EE 16A transformer IRF540NLPBF IRF540NL IRF540NS IRF540NSPBF AN-994 IRF540N IRL3103L 4.5v to 100v input regulator PDF

    IRLZ34N

    Contextual Info: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier


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    1307B IRLZ34N O-220 IRLZ34N PDF

    Contextual Info: PROVISIONAL PD - 94594 IRF7832 HEXFET Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. VDSS RDS on max Qg 30V 4.0mΩ@VGS = 10V 34nC Benefits l Very Low RDS(on) at 4.5V VGS


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    IRF7832 IA-48 PDF

    Contextual Info: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier


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    1307B IRLZ34N O-220 commercial-industr245, PDF

    IRLZ34N

    Contextual Info: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier


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    1307B IRLZ34N O-220 IRLZ34N PDF

    IRLZ34N

    Contextual Info: 2002-03-07 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-188-70 IRLZ34N HEXFET TO-220 PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive


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    IRLZ34N O-220 1307B IRLZ34N PDF

    IRFZ34N

    Abstract: irfz34n equivalent irf 405
    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


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    1276C IRFZ34N O-220 IRFZ34N irfz34n equivalent irf 405 PDF

    800S-P060

    Abstract: SCP-800-48 SCP-800-09 SCP-800-12 SCP-800-15 SCP-800-60 800S-P012 800S-P018 800s-p048
    Contextual Info: SSCCPp- 8- 08 00 0s e rsi ee rsi e s 800W�Parallel Type�With�PFC�Function 8 0 0 W P a r a l l e l Type With PFC Function ���������� ������������������� ����������������


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    800WParallel SCP-800-12 SCP-800-15 SCP-800-18 SCP-800-24 SCP-800-36 SCP-800-48 SCP-800-60 800S-P009 800S-P012 800S-P060 SCP-800-48 SCP-800-09 SCP-800-12 SCP-800-15 SCP-800-60 800S-P012 800S-P018 800s-p048 PDF

    irfz34n equivalent

    Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


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    1276C IRFZ34N O-220 irfz34n equivalent IRFZ34N IRFZ34N MOSFET *rfz34n PDF

    irfz34n

    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


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    1276C IRFZ34N O-220 irfz34n PDF

    IRF5305L

    Abstract: IRF5305S
    Contextual Info: PD - 9.1386B IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω


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    1386B IRF5305S/L IRF5305S) IRF5305L) IRF5305L IRF5305S PDF

    irf 44 n

    Abstract: 1329B IRLIZ34N IRLZ34N
    Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


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    1329B IRLIZ34N O-220 irf 44 n 1329B IRLIZ34N IRLZ34N PDF

    IRLIZ34N

    Abstract: MOSFET IRF 630
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


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    IRLIZ34N IRLIZ34N MOSFET IRF 630 PDF

    Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


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    1329B IRLIZ34N O-220 PDF

    Equivalent IRF 44

    Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
    Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


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    1329B IRLIZ34N O-220 Equivalent IRF 44 IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34 PDF

    IRFZ34N

    Abstract: IRF 250
    Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


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    1276C IRFZ34N O-220 IRF1010 IRFZ34N IRF 250 PDF

    AN-994

    Abstract: IRFZ34N IRFZ34NL IRFZ34NS IRFZ34N MOSFET
    Contextual Info: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A


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    IRFZ34NS/L IRFZ34NS) IRFZ34NL) AN-994 IRFZ34N IRFZ34NL IRFZ34NS IRFZ34N MOSFET PDF

    AN-994

    Abstract: IRFZ34N IRFZ34NL IRFZ34NS
    Contextual Info: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A


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    IRFZ34NS/L IRFZ34NS) IRFZ34NL) AN-994 IRFZ34N IRFZ34NL IRFZ34NS PDF

    AN-994

    Abstract: IRFZ34N IRFZ34NL IRFZ34NS
    Contextual Info: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A


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    IRFZ34NS/L IRFZ34NS) IRFZ34NL) AN-994 IRFZ34N IRFZ34NL IRFZ34NS PDF

    AN-994

    Abstract: IRFZ34N IRFZ34NL IRFZ34NS
    Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-175-26 IRFZ34NS HEXFET D2Pak PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology


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    IRFZ34NS IRFZ34NS/L IRFZ34NS) IRFZ34NL) AN-994 IRFZ34N IRFZ34NL PDF

    IRL2910

    Abstract: IRLI2910 SS2000
    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1384 IRLI2910 PRELIMINARY HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm


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    IRLI2910 IRL2910 IRLI2910 SS2000 PDF