IRF540N
Abstract: IRFP140N
Text: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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91343B
IRFP140N
O-247
IRF540N
IRFP140N
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IRF540NS
Abstract: IRF540NSPBF AN-994 IRF540N IRF540NL IRL3103L EE 16A transformer MOSFET IRF540n
Text: PD - 95130 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF540NSPbF IRF540NLPbF l HEXFET Power MOSFET l D RDS on = 44mΩ G Advanced HEXFET ® Power MOSFETs from
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IRF540NSPbF
IRF540NLPbF
EIA-418.
IRF540NS
IRF540NSPBF
AN-994
IRF540N
IRF540NL
IRL3103L
EE 16A transformer
MOSFET IRF540n
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IRF540NS
Abstract: No abstract text available
Text: PD - 95130 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF540NSPbF IRF540NLPbF l HEXFETÆ Power MOSFET l D RDS on = 44m! G Advanced HEXFET Æ Power MOSFETs from
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IRF540NSPbF
IRF540NLPbF
EIA-418.
IRF540NS
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EE 16A transformer
Abstract: IRF540NLPBF IRF540NL IRF540NS IRF540NSPBF AN-994 IRF540N IRL3103L 4.5v to 100v input regulator
Text: PD - 95130 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF540NSPbF IRF540NLPbF l HEXFET Power MOSFET l D RDS on = 44mΩ G Advanced HEXFET ® Power MOSFETs from
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IRF540NSPbF
IRF540NLPbF
EIA-418.
EE 16A transformer
IRF540NLPBF
IRF540NL
IRF540NS
IRF540NSPBF
AN-994
IRF540N
IRL3103L
4.5v to 100v input regulator
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IRLZ34N
Abstract: No abstract text available
Text: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier
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1307B
IRLZ34N
O-220
IRLZ34N
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Untitled
Abstract: No abstract text available
Text: PROVISIONAL PD - 94594 IRF7832 HEXFET Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. VDSS RDS on max Qg 30V 4.0mΩ@VGS = 10V 34nC Benefits l Very Low RDS(on) at 4.5V VGS
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IRF7832
IA-48
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Untitled
Abstract: No abstract text available
Text: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier
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1307B
IRLZ34N
O-220
commercial-industr245,
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IRLZ34N
Abstract: No abstract text available
Text: PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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1307B
IRLZ34N
O-220
IRLZ34N
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PDF
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IRLZ34N
Abstract: No abstract text available
Text: 2002-03-07 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-188-70 IRLZ34N HEXFET TO-220 PD - 9.1307B IRLZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive
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IRLZ34N
O-220
1307B
IRLZ34N
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IRFZ34N
Abstract: irfz34n equivalent irf 405
Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276C
IRFZ34N
O-220
IRFZ34N
irfz34n equivalent
irf 405
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800S-P060
Abstract: SCP-800-48 SCP-800-09 SCP-800-12 SCP-800-15 SCP-800-60 800S-P012 800S-P018 800s-p048
Text: SSCCPp- 8- 08 00 0s e rsi ee rsi e s 800W�Parallel Type�With�PFC�Function 8 0 0 W P a r a l l e l Type With PFC Function ���������� ������������������� ����������������
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800WParallel
SCP-800-12
SCP-800-15
SCP-800-18
SCP-800-24
SCP-800-36
SCP-800-48
SCP-800-60
800S-P009
800S-P012
800S-P060
SCP-800-48
SCP-800-09
SCP-800-12
SCP-800-15
SCP-800-60
800S-P012
800S-P018
800s-p048
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irfz34n equivalent
Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276C
IRFZ34N
O-220
irfz34n equivalent
IRFZ34N
IRFZ34N MOSFET
*rfz34n
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irfz34n
Abstract: No abstract text available
Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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1276C
IRFZ34N
O-220
irfz34n
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IRF5305L
Abstract: IRF5305S
Text: PD - 9.1386B IRF5305S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF5305S l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.06Ω
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1386B
IRF5305S/L
IRF5305S)
IRF5305L)
IRF5305L
IRF5305S
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irf 44 n
Abstract: 1329B IRLIZ34N IRLZ34N
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
irf 44 n
1329B
IRLIZ34N
IRLZ34N
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IRLIZ34N
Abstract: MOSFET IRF 630
Text: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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IRLIZ34N
IRLIZ34N
MOSFET IRF 630
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Untitled
Abstract: No abstract text available
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
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Equivalent IRF 44
Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
Equivalent IRF 44
IRLIZ34N
1329B
IRLZ34N
e4019
mosfet irf 150
irliz34
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IRFZ34N
Abstract: IRF 250
Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier
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Original
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1276C
IRFZ34N
O-220
IRF1010
IRFZ34N
IRF 250
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AN-994
Abstract: IRFZ34N IRFZ34NL IRFZ34NS IRFZ34N MOSFET
Text: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A
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IRFZ34NS/L
IRFZ34NS)
IRFZ34NL)
AN-994
IRFZ34N
IRFZ34NL
IRFZ34NS
IRFZ34N MOSFET
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AN-994
Abstract: IRFZ34N IRFZ34NL IRFZ34NS
Text: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A
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IRFZ34NS/L
IRFZ34NS)
IRFZ34NL)
AN-994
IRFZ34N
IRFZ34NL
IRFZ34NS
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AN-994
Abstract: IRFZ34N IRFZ34NL IRFZ34NS
Text: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A
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IRFZ34NS/L
IRFZ34NS)
IRFZ34NL)
AN-994
IRFZ34N
IRFZ34NL
IRFZ34NS
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PDF
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AN-994
Abstract: IRFZ34N IRFZ34NL IRFZ34NS
Text: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-175-26 IRFZ34NS HEXFET D2Pak PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology
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IRFZ34NS
IRFZ34NS/L
IRFZ34NS)
IRFZ34NL)
AN-994
IRFZ34N
IRFZ34NL
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PDF
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IRL2910
Abstract: IRLI2910 SS2000
Text: Previous Datasheet Index Next Data Sheet PD 9.1384 IRLI2910 PRELIMINARY HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
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IRLI2910
IRL2910
IRLI2910
SS2000
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