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    EDAL SERIES B376 SILICON BRIDGE RECTIFIER Search Results

    EDAL SERIES B376 SILICON BRIDGE RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CMG03A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG09A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG11B
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG10A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG04A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation

    EDAL SERIES B376 SILICON BRIDGE RECTIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Edal Series B376 Silicon Bridge Rectifier

    Abstract: b376-10 BRIDGE-RECTIFIER piv bridge rectifier B376 Edal
    Contextual Info: Edal SERIES B376 Silicon Bridge Rectifier INCHES DIM. A B C D E F MIN. 0.31 0.18 1.1 1.0 0.028 0.18 MAX. 0.35 0.22 0.034 0.22 MILLIMETER MIN. 8.00 4.60 27.9 25.4 0.71 4.60 MAX. 9.00 5.60 0.86 5.60 ELECTRICAL RATINGS MAXIMUM AVERAGE CURRENT SINGLE PHASE FULL WAVE @ 55o C


    Original     		B376-5-1 B376-10-1 B376-20-1 B376-40-1 B376-60-1 B376-80-1 B376-100-1 B376-120-1 Int18 Edal Series B376 Silicon Bridge Rectifier b376-10 BRIDGE-RECTIFIER piv bridge rectifier B376 Edal PDF

    AL1510

    Abstract: AL205 BA172-5
    Contextual Info: EDAL The compact design offered by Edal printed circuit board, medium and high current bridges offers a significant reduc­ tion in space requirements. This is a direct result of the ability of these units to ac­ commodate maximum power per unit size and withstand high transient energy.


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