ED-26 DIODE Search Results

tda120XX

Abstract: sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1
Contextual Info: N U N U N U N U N U C C C C C O O O O O TR O TR O TR O TR LL LL LL LL ED ED ED ED C PY PY PY P O O O O C C C U U U N N O O O C C C Product data sheet N N N Rev. 3.6 — 26 April 2006 O TR N N N N N Versatile signal processor for low- and mid-range TV applications

hb5-132

Abstract: S370 S370 UDT
Contextual Info: VISIB LE LIG HT PRODUCTS Light Emitting Diode REV:B DATE:2005/4/26 iDEVICE NO:HB5-132 (H i-R ed ) iLE N S COLOR: V colored diffusion white diffusion colored transparent water clear iPACKAGE DIMENSIONS: NOTE: 1 .All dimensions are In millimeter. 2 .Lead spacing In measured where the

vt1631

Abstract: IT8888G vt8237 via vt8237R Plus chipset south bridge ESM-CN700 it8888 VT1636 VT8237R PLUS VT1622A VT8237R
Contextual Info: ESM-CN700 Series Onboard VIA Eden V4 1 GHz SOM-ETX CPU Module User’s Manual 1st Ed – 26 October 2006 Part No. 2047274100R ESM-CN700 Series FCC Statement THIS DEVICE COMPLIES WITH PART 15 FCC RULES. OPERATION IS SUBJECT TO THE FOLLOWING TWO CONDITIONS:

ED-96

Abstract: DC600V Ed96
Contextual Info: 6100096681 TO 41749 SEGEA F’RO!I61O25 0 2 07/26/’96 12:10 07,’26 SPEC. Ny,. s~ l?:i? P,02,’14 ED-96028 ‘“w PAGE -.> .— ELECTRONIC COMPO~NTS REPwSEWAlh GROUP SHARP CORPOWTION OPTO-ELECTRONIC DEVICES DIV. SPECIFICATION I DEVICE SPECIFICATION POR

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

54LS590

Abstract: 1N3064 1N916 SNJ54LS590J 5962-87517
Contextual Info: I 1 LTR REVIS IO NS DATE D ESC R IPTIO N APPROVED REV PA G E REV STATUS OF PAGES REV PAGES Defense Electronics Supply Center Dayton, Ohio Original date of drawing: 26 JANUARY 1988 AMSC N/A 1 2 3 4 PR EPA R ED 5 6 7 8 9 10 BY- 11 12 13 MILITARY DRAWING This drawing is available for use by

115-230V

Abstract: ac dC converter circuit diagram ac to dc converter module LC03-6 IOM2 80912
Contextual Info: Ha rd wa re U se r ’s M an ual , DS 2, J un e 2 00 1 Q-SMINT O Evaluation Board SIPB 80912 Version 1.1 Wi r ed Communications N e v e r s t o p t h i n k i n g . Edition 2001-06-26 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

W65C816

Abstract: A06 diode RWB 252 diode A23 dba1 62C256 27C256 XC9572 a03p a023
Contextual Info: 6 5 4 3 2 1 R E V I SION RECORD L TR E C O NO: A P P R O V ED: D ATE: VCC_ARROW C6 C7 C8 C9 C10 C11 C12 C C C C C C C GND J8 D D GND VCC_ARROW 4 2 4 2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 OCSE VCC_ARROW 1 21 22 23 24 25 26 27 28 29 30 31 32 J P1

PEF 4265 T V2.1

Abstract: PEF4265 PG-VQFN-48-15 PEF 4265 PEF4265T GEMINAX MAX d PEB 4265 V1.2 peb 4365 V2.1 GEMINAX - GEMINAX FAMILY vinetic
Contextual Info: O c t o b e r 2 00 6 S LIC -E / TS LIC -E S ub s c ri be r L in e I n t e rf a c e C i rc u it E nh an c ed F ea t ur e S et S LI C - E P E F 42 65 , V er s io n 2 . 1 S LI C - E 2 (P E F 4 26 5- 2) , V e rs i on 2. 1 T S L I C - E ( P E F 4 36 5) , V er s i o n 2 . 1

17800

Abstract: 5SDD If 8000 Vrrm 8000 11350
Contextual Info: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

Contextual Info: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

17300A

Contextual Info: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Ω Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance

17800

Abstract: DIODE ED 26 5SDD If 8000 Vrrm 8000
Contextual Info: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Ω Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance

DIODE ED 26

Abstract: 40170 5SDD If 8000 Vrrm 8000
Contextual Info: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 July 06 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance Blocking

BH45-704A

Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Contextual Info: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se

1N4474

Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Contextual Info: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.

LT028

Abstract: LT022MC LT022PD LT027 LASER LT024MD LT022MC laser diode LT025 lt027 LT015MF LT022
Contextual Info: Laser Diode Quick Guides~ypicaI Characteristics x x x x x x x x x x x x x I x x x x x x Quick Guide I [ Model No. ~- - . -n .,. x ., Conformable to No.84zuud/ 01 FUA u >.A .- Wavelength (rim) 750 LT030 series LT021 series LT022 series ~“-: LT023 series

ED 05 Diode

Abstract: ED 03 Diode
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM25HG-24S DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs

ED 05 Diode

Abstract: ED 03 Diode
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM50HG-12S DC current . 50A Repetitive peak reverse voltage . 600V • trr Reverse recovery time . 0.2µs

1N4775

Abstract: 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4784A
Contextual Info: • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4775 thru 1N4784A • LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C

DIODE ED 26

Contextual Info: SKKD 75F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter 4*5 (445 2645* 7 ""#  & &   & &%     ( ( 26( 7 8/  %  "9#: /# $-: ; 7 // <

MLL5523B-1

Abstract: JANTX1N6318US JANTXV1N6317 SP6317 SP6318US
Contextual Info: Zener Regulator Diodes Micmsemi . Part Number ZEN 1 MLL4624 MLL4624-1 1N6317 1N6317US JAN1N6317 JAN1N6317US JANTX1N6317 JANTX1N6317US JANTXV1N6317 JANTXV1N6317US SP6317 SP6317US 1N5231A 1N5231A D 07 1N5231B 1N5231B (D07J MLL5231B MLL5231B-1 MLL5523B MLL5523B-1

1N3154

Abstract: 1N3157A ZENER C 3V 1N3156 1N3157-1 1N3157A-1 1N3154-1 1N3154A 1N3155 1N3155A
Contextual Info: • 1N3154-1 THRU 1N3157-1 AVAILABLE IN JAN, JANTX, JANTXV 1N3154 thru 1N3157A and AND JANS PER MIL-PRF-19500/158 • 8.4 V0LT NOMINAL ZENER VOLTAGE 1N3154-1 thru 1N3157A-1 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS

Contextual Info: • 1N3154-1 THRU 1N3157-1 AVAILABLE IN JAN, JANTX, JANTXV 1N3154 thru 1N3157A and AND JANS PER MIL-PRF-19500/158 • 8.4 V0LT NOMINAL ZENER VOLTAGE 1N3154-1 thru 1N3157A-1 • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS