TRANSISTOR 7812 ct
Abstract: TRANSISTOR 7812 internal block diagram working ALI-25 FMMT2369 LT1054 PMLL4151 TXC-05810 diagram of ic 7941
Text: CellBus Technical Manual R CellBus Technical Manual and CUBIT Applications Switching and Routing implemented in the CUBIT Physical and Electrical Interconnect using CellBus Physical Layer Physical Layer Physical Layer Physical Layer Cost Effective
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TXC-05801-TM1
TRANSISTOR 7812 ct
TRANSISTOR 7812 internal block diagram working
ALI-25
FMMT2369
LT1054
PMLL4151
TXC-05810
diagram of ic 7941
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BYT03-400
Abstract: 100C
Text: BYT03-400 FAST RECOVERY RECTIFIER DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 3A VRRM 400 V trr 25 ns VF (max) 1.4 V FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING DESCRIPTION DO-201AD (Plastic) Free wheeling diode in converters and motor control circuits.
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BYT03-400
DO-201AD
BYT03-400
100C
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Untitled
Abstract: No abstract text available
Text: PFR 850 → 856 FAST RECOVERY RECTIFIER DIODES LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABILITY APPLICATIONS AC-DC POWER SUPPLIES AND CONVERTERS FREE WHEELING DIODES, etc. DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diodes very attractive components for
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DO-201AD
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BYT03-400
Abstract: 100C
Text: BYT03-400 FAST RECOVERY RECTIFIER DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 3A VRRM 400 V trr 25 ns VF (max) 1.4 V FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING DESCRIPTION DO-201AD (Plastic) Free wheeling diode in converters and motor control circuits.
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BYT03-400
DO-201AD
BYT03-400
100C
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74F253
Abstract: IDTQS33X2253 IDTQS33X253 QS33X2253
Text: IDTQS33X253 HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX INDUSTRIALTEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH MULTIWIDTH 24:6 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc
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IDTQS33X253
48-pin
QS33X2253
33X2253
74F253
IDTQS33X2253
IDTQS33X253
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1N5391 motorola
Abstract: 1N5338 ln5399 diode 1N5391 1N5392 1N5393 1N5395 1N5397 1N5399
Text: MOTOROLA SC 15E {DIODES/OPTO} D I t,3b?2SS D07TSb7 b | r-oh is" 1N5391 MOTOROLA SEM ICONDUCTOR thru TECHNICAL DATA 1N5399 D e s ig n e r s D a ta S h e e t "S U R M E T IC " R E C T IFIE R S subm iniature size, axial lead-mounted L EAD -M O U N T ED SILICON R EC T IFIER S
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1N5391
1N5399
1N5391
1N5392
1N5393
1N5395
1N5397
1N5338
1N5399
1N5391 motorola
ln5399 diode
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KA38428
Abstract: ka3842 application circuits smps power circuit using ka3842 KA3842 ka3842 application notes KA3842B KA3842 14 sop KA3843B ka384 KA3844B
Text: KA3842B/3 B/4 B/5 B SMPS CONTROLLER CURRENT-MODE PWM CONTROLLERS T h e KA3842B/3B/4B/5B are fixed frequency current-m ode PW M controller. T h e y are specia lly designed for O ff - Line and D C -to-D C converter a pplications w ith m inim al external com ponents. T h e se integrated circuits feature a trim m ed
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KA3842B/3
KA3842B/3B/4B/5B
KA3842B
KA3844B
KA3843B
KA3845B
KA38428
ka3842 application circuits
smps power circuit using ka3842
KA3842
ka3842 application notes
KA3842 14 sop
ka384
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diode 7236
Abstract: 7236 diode p type laser diode
Text: PGT 2120 Compact Laser Transmitter This compact 1300 nm laser transmitter is expecially suited for F IT L Fiber In The Loop and similar short and medium haul telecom applications. The module includes a Buried Heterostructure InGaAs/lnP Fabry Perot laser diode and InGaAs P IN back facet
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T2120
diode 7236
7236 diode
p type laser diode
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5342B
Abstract: 1n 4148 zener diode IN5956B diode IN 5342B IN 5342B Zener Diode 4148 zener T 4148 IN5913B in5388b IN5342B
Text: ZENER DIODES 1 WATT ZENER DIODE-PLASTIC O P E R A T IN G A N D S TO R A G E T E M P E R A T U R E - 6 5 ° C to + 1 75 °C IN 4 7 3 6 THRU IN 4 7 6 4 *E LE C T R IC A L C H A R A C T E R IS T IC S Ta = 2 5 °C u n le ss o th e rw ise n o te d V f = 1.2 V M ax,
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1N4736A
1N4749A
1N4750A
5342B
1n 4148 zener diode
IN5956B
diode IN 5342B
IN 5342B
Zener Diode 4148
zener T 4148
IN5913B
in5388b
IN5342B
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93415
Abstract: 93415 16 pin Fairchild 93415 93L415 xj65 93L415-35 93L415-40 93L415-45 93L415-50 93L415-60
Text: 93415/93L415 1024 x 1-Bit Static Random Access Memory FA IR C H ILD A Schlumberger Company M em o ry and H ig h Speed L o g ic Description The 93415 is a 1024-bit read/w rite Random Access M em ory RAM , organized 1024 words by one bit. It is designed fo r high speed cache, control and buffer
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93415/93L415
1024-bit
93L415)
93415YY
93L415-70
93L415YY
93415
93415 16 pin
Fairchild 93415
93L415
xj65
93L415-35
93L415-40
93L415-45
93L415-50
93L415-60
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MIL-STD-1276
Abstract: VS-100 kovar 107D 204C 213B VS100
Text: VS-100 High Speed Wideband RF Switch 2-500 MHz SP2T L4RIL T h e V S -100 is a m in ia tu re high perform ance RF S ch o ttky diode sv/itch w ith inte rna l d rivers and internal 50 o h m term in atio ns. T his sw itch e xh ib its high spe ed sw itching, lo w sw itch ing
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VS-100
500CF.
MIL-STD-1276
kovar
107D
204C
213B
VS100
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MIL-STD-1276
Abstract: 107D 204C 213B diode 107d
Text: VS-21 High Isolation RF Switch 5-500 MHz SP2T MUL G UARANTEED MINIMUM PERFORM ANCE DATA O ve rall F req u en cy Range: 5 -5 0 0 M Hz 5 -1 0 0 0.7 65 1.25 VS-21 is a m in ia tu re high perfo rm an ce R F h yb rid PIN diode sw itch w ith in te rn a l C M O S d rive r
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VS-21
MIL-STD-1276.
MIL-G-45204.
QQS-698.
QQN-290,
MIL-STD-1276,
MIL-G-45204,
MIL-STD-1276
107D
204C
213B
diode 107d
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tsus3400
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D • IAL6G fl^EQO^b 000Ö72Ö 5 TSUS 3400 inHUlPtiMil&lK] electronic CfMlN* ÏKhftOiOa«* T-4HJ GaAs Infrared Diode in 0 3 mm T-1 Plastic Case Applications: Radiation source in near infrared range Features: • Good spectral matching for silicon photo
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D0Dfi730
flR50D
0D0A732
tsus3400
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PT4600
Abstract: No abstract text available
Text: SHARP GL4600/GL4610 GL4600/GL4610 D oubleEn dedMoldTypeln,rared Emitting Diode • Features ■ Outline Dim ensions 1. Compact double ended mold package Packaging a re a : 37% smaller than GL480 2. Narrow beam angle (Half intensity angle : ± 13° ) (Radiant intensity : 3 times as large as GL460)
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GL4600/GL4610
GL480)
GL460)
GL4610)
GL4600
PT4600)
PT4600
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kd 617
Abstract: No abstract text available
Text: RECTIFIER ASSEMBLIES JANTX 483-1 JANTX 483-2 JANTX 483-3 Three Phase Bridges, 25 Amp, Military Approved FEATURES D E S C R IPT IO N • • • • • • • This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type
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MIL-S-19500/483
kd 617
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JAN1N486B
Abstract: No abstract text available
Text: Microsemi Corp. yfm f* in e a iode expert?. SANTA ANA, CA F o r m o re in fo rm a tio n call: 7 1 4 979-K220 FE A TU R E S 1 N 4 8 3 B thru 1 N 4 8 6 B and 1 N 5 19 4 thru 1 N 5 19 6 GENERAL PURPOSE SILICON DIODES • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (00-35).
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979-K220
1N5194
1N5196
1N5194,
1N5195,
1N5196.
DO-35
JAN1N486B
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Untitled
Abstract: No abstract text available
Text: Transmissive Optoswitch VTL23G2B, 23G3B Slotted Switch - Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IR ED with a TTL compatible, Schmitt output, photo 1C detector in an opaque plastic case with
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VTL23G2B,
23G3B
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t191
Abstract: 414 LEM DIODE BYU98 4953 sf 5125 auo 002 L4963 L4963D L4963W S020
Text: SGS-THOMSON L4963 L4963D 1.5A SWITCHING REGULATOR • 1.5A O UTPUT LOAD CURRENT ■ 5.1 TO 36V O UTPUT VOLTAGE RANGE ■ D IS C O N T IN U O U S VARIABLE FR EQ UENC Y MODE ■ PRECISE +/—2% ON CHIP REFERENCE ■ VERY HIGH EFFICIENCY ■ VERY FEW EXTERNAL COMPONENTS
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L4963
L4963D
005125b
t191
414 LEM DIODE
BYU98
4953
sf 5125
auo 002
L4963D
L4963W
S020
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F799-0G
Abstract: F799-2G F799-3G F799-4G F799-5G F799-6G F799-8G F903C-11G F903C-22 F903C24G
Text: m ic r o s em corp / r p n h e T I tu to ifa Daaaaai t I ' ~ ailslBIMKJRO A M ICRO SEM i COM PANY • fl 1 3 - Single Phase Full Wave Bridge Rectifiers — D.C. Current lg to 5 Amperes Epoxy Case, Hermetically Sealed Glass Diodes PART NO. ; s ; F799-0G F799-1G
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bllb040
F799-0G
F799-1
F799-2G
F799-3G
F799-4G
F799-5G
F799-6G
F799-8G
F799-1QG
F799-6G
F903C-11G
F903C-22
F903C24G
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BYT03-400
Abstract: No abstract text available
Text: BYT03-400 _ FAST RECOVERY RECTIFIER DIODE MAJOR PRODUCTS CHARACTERISTICS I f a v 3 A V rrm 400 V trr 25 ns V f (max) 1 .4 V FEATURES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING DESCRIPTION
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BYT03-400
BYT03-400
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c 50275
Abstract: QUADRUPLE TRANSCEIVERS AM26S10 AM26S10C AM26S11 AM26S11C
Text: AM26S10C, AM26S11C QUADRUPLE BUS TRANSCEIVERS SLLS116A- D2298, JANUARY 1977-R EV IS ED JANUARY 1993 * Schottky Circuitry for High Speed, Typical Propagation Delay Time. . . 12 ns * Drivers Feature Open-Collector Outputs for Party-Line Data Bus Operation
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iAM26S10C,
AM26S11C
SLLS116A-
D2298,
AM26S10
AM26S11
AM26S10C
1N916
flTbl724
c 50275
QUADRUPLE TRANSCEIVERS
AM26S11
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0PA37
Abstract: OPA27CZ
Text: For Im eéiate Assistance, Contact our Local Salesperson OPA27 OPA37 AVAILABLE IN DIE Ultra-Low Noise Precision OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS • LOW NOISE: 3.8nV/\'Hz max at 1kHz • PRECISION INSTRUMENTATION • LOW OFFSET: 25|iV max • DATA ACQUISITION
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OPA27
OPA37
120dB
114dB
100dB
OP-07,
OP-05,
AD510,
AD517
V1000
0PA37
OPA27CZ
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RW marking
Abstract: No abstract text available
Text: SHARP» GL460/GL461 GL460/GL461 Double Ended Mold Type Infrared Emitting Diode • Features ■ Outline Dimensions Unit : mm 1. Sm all dou ble-end type package 0.7 ( packaging area : 37% sm aller than GL480) 0.25 M ark GL460 None GL461 Green (GL461) 3. Taped m odels 2 ,000p cs/reel (GL460T/
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GL460/GL461
GL480)
GL461)
GL460T/
GL461T)
GL460
GL461
GL460T
/GL461T
RW marking
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BYU98
Abstract: No abstract text available
Text: DEC 1 3 1990 H Z J S G S -T H O M S O N ^ 7 # , l i a i O E ^ @ g l L i g ,u ’[ ^ @ [ ì a D ( g g _ L 4 9 6 3 1,5A SWITCHING REGULATOR • 1.5A OUTPUT LOAD CURRENT ■ 5.1 TO 36V OUTPUT VOLTAGE RANGE ■ DISCONTINUOUS
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