ECONOPACK3 Search Results

ECONOPACK

Abstract: FS100R12KE3 eupec FS50R12KE3 FS300R12KE3 FS75R12KE3 2902 FS450R12KE3 Econo FS225R12KE3
Contextual Info: MARKETING NEWS European PowerSemiconductor and Electronics Company New Pin-Out for SixPACKs in EconoPACK3 package for 1200V IGBT3 Modules As announced some weeks ago in the Marketing News 02/00 “Pin out for SixPACKs in EconoPACK2”, we would like to inform you today about the new Pin-Out for 1200V IGBT3

75GD120DN2

Abstract: SIGC121T120R2C
Contextual Info: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V

a4661

Abstract: BSM100GD120DN2 SIGC156T120R2C
Contextual Info: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A

2kw inverter

Abstract: ECONOPACK FS450R12KE3 Inverter design FS150R12KE3G FS300R12KE3 igbt inverter design eupec FS450R12KE3 eupec design ups inverter
Contextual Info: The standard platform for modular inverter design eupec 2000-06-06 page1 EconoPACK+ The standard platform for modular inverter design Agenda FKey Information FFrom the Module to the Inverter Family FElectrical Aspects FInternal Structure FThermal Design FSummary

FS50R12KE3

Abstract: FS75R12KE3 FS300R12KE3 FS100R12KE3 IGBT pinout FS150R12KE3G Econo ECONOPACK FS450R12KE3 FS150R12KE3
Contextual Info: MARKETING NEWS 02/00 European PowerSemiconductor and Electronics Company Max Planck Str. 5 D-59581 Warstein Germany 28.02.00 New Pin-Out for SixPACKs in EconoSTECK2 package for 1200V IGBT3 IGBT Modules Today we would like to inform you about the new Pin-Out for 1200V Econo SixPACK in the

BT diode

Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Contextual Info: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

a4661

Abstract: BSM100GD120DN2 SIGC156T120R2C
Contextual Info: SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A

Contextual Info: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V

75GD120DN2

Abstract: SIGC121T120R2C
Contextual Info: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V

75GD120DN2

Abstract: SIGC121T120R2C
Contextual Info: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V

heatsink catalogue

Abstract: FS450R12KE3 3rd Generation of 1200V IGBT Modules FS300R12KE3 Econo PIM The internal structure module IGBT FS300R12KE3 FS150R12KE3G half bridge converter 2kw High Voltage Busbar inverter techniques
Contextual Info: EconoPACK+ A new IGBT module for optimized inverter solutions M. Münzer, M.Hornkamp eupec GmbH & Co.KG, Warstein 08.2000 So called EconoPACK and EconoPIM modules with solderable pin terminals have changed the structure of inverters in application up to 20kW. Above 100 kW IHM modules have set a new

a4661

Abstract: An 7181
Contextual Info: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A

a4661

Abstract: soft solder die bonding BSM100GD120DN2 igbt "sawn on foil" SIGC156T120R2C
Contextual Info: SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A

a4661

Abstract: BSM100GD120DN2 SIGC156T120R2C 7181-M
Contextual Info: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A